These N-Channel enhancement mode power field effect transistors produc

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NDH831N N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance provide superior switching performance. These devices particularly suited voltage applications such notebook computer power management portable electronics where fast switching, in-line power loss, resistance transients needed.
July 1996
Features
5.8A, 20V. RDS(ON) 0.03 4.5V RDS(ON) 0.04 2.7V.
High density cell design extremely RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power current handling capability.
Absolute Maximum Ratings 25°C unless otherwise noted Symbol VDSS VGSS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
(Note (Note (Note (Note
NDH831N
Units
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDH831N Rev.
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) Symbol Parameter Conditions Units
CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 55°C Gate Body Leakage, Forward Gate Body Leakage, Reverse VDS= VGS, 125°C Static Drain-Source On-Resistance 125°C ID(on) Ciss Coss Crss tD(on) tD(off) On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 0.35 0.022 0.03 0.027 -100
CHARACTERISTICS (Note Gate Threshold Voltage 0.03 0.54 0.04
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGEN RGEN 19.5
NDH831N Rev.
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) Symbol Parameter Conditions
(Note
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 0.75
JA(t
JC+RCA(
RDS(ON
Typical RqJA using board layouts shown below 4.5"x5" FR-4 still environment: 70oC/W when mounted copper. 125oC/W when mounted 0.026 copper. 135oC/W when mounted 0.005 copper.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH831N Rev.
Typical Electrical Characteristics
=4.5V
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE CURRENT
DS(on) NORMALIZED
2.0V
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
DRAIN-SOURCE ON-RESISTANCE
DS(ON) NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5.8A 4.5V
DS(on) NORMALIZED
125°C
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
5.0V
DRAIN CURRENT
GATE-SOURCE THRESHOLD VOLTAGE
-55°C
125°C
NORMALIZED
250µA
25°C
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH831N Rev.
Typical Electrical Characteristics
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.12
250µA
REVERSE DRAIN CURRENT
NORMALIZED
1.08
1.04
125°C
25°C
-55°C
0.01
0.96
0.001
0.92
JUNCTION TEMPERATURE (°C)
0.0001 BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
3000 2000
GATE-SOURCE VOLTAGE
5.8A
CAPACITANCE (pF)
1000
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
d(off)
VOUT
INVERTED
I10%
PULSE WIDTH
Figure Switching Test Circuit
Figure Switching Waveforms
NDH831N Rev.
Typical Thermal Characteristics
5.0V
STEADY-STATE POWER DISSIPATION TRANSCONDUCTANCE (SIEMENS)
-55°C 25°C
125°C
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA
Figure Transconductance Variation with Drain Current Temperature.
Figure SuperSOTTM-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
STEADY-STATE DRAIN CURRENT
DRAIN CURRENT
4.5V
0.03 0.01
4.5"x5" FR-4 Board Still 4.5V
SINGLE PULSE Note 25°C
DRAIN-SOURCE VOLTAGE
COPPER MOUNTING AREA
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
Figure Maximum Safe Operating Area.
0.05
0.05 0.02
r(t) Note
P(pk)
0.03 0.02 0.01
0.01 Single Pulse
Duty Cycle, TIME (sec)
.001
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH831N Rev.

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