BF997 N-channel dual-gate MOS-FET Product specification File unde
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BF997 N-channel dual-gate MOS-FET
Product specification File under Discrete Semiconductors, SC07 April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
FEATURES Protected against excessive input voltage surges integrated back-to-back diodes between gates source Integrated drain resistance suppress oscillation frequency range greater than GHz. APPLICATIONS applications such UHF/VHF television tuners Professional communication equipment Especially intended pre-amplifiers CATV tuners with large tuning range MHz.
BF997
DESCRIPTION Depletion type field-effect transistor plastic SOT143 microminiature package with interconnected source substrate.
handbook, halfpage
PINNING SYMBOL source drain gate gate
Marking code: MKp.
DESCRIPTION
view
MAM039
Fig.1 Simplified outline (SOT143) symbol.
QUICK REFERENCE DATA SYMBOL Ptot Cig1-s PARAMETER drain-source voltage drain current total power dissipation junction temperature transfer admittance feedback capacitance noise figure kHz; VG2-S Tamb CONDITIONS TYP. MAX. UNIT
input capacitance gate MHz; VG2-S MHz; VG2-S MHz; BSopt; VG2-S
April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
LIMITING VALUES according with Absolute Maximum Rating System (IEC 134). SYMBOL ID(AV) IG1-S IG2-S Ptot Tstg PARAMETER drain-source voltage drain current (DC) average drain current gate 1-source current gate 2-source current total power dissipation storage temperature junction temperature Tamb note CONDITIONS MIN. MAX. +150
BF997
UNIT
THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction ambient CONDITIONS free air; note VALUE UNIT
Note Limiting values Thermal characteristics Device mounted ceramic substrate
handbook, halfpage
MGE792
Ptot (mW)
Tamb (°C)
Fig.2 Power derating curve.
April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
STATIC CHARACTERISTICS unless otherwise specified. SYMBOL IG1-SS IG2-SS PARAMETER gate cut-off current gate cut-off current CONDITIONS VG1-S VG2-S VG2-S VG1-S IG1-SS VG2-S IG2-SS VG1-S VG2-S VG1-S VG2-S VG1-S MIN.
BF997
MAX. -2.5
UNIT
V(BR)G1-SS gate 1-source breakdown voltage V(BR)G2-SS gate 2-source breakdown voltage V(P)G1-S V(P)G2-S IDSS gate 1-source cut-off voltage gate 2-source cut-off voltage drain-source cut-off voltage
DYNAMIC CHARACTERISTICS Measuring conditions (common source): VG2-S Tamb SYMBOL Cig1-s Cig2-s PARAMETER transfer admittance input capacitance gate input capacitance gate feedback capacitance output capacitance noise figure power gain MHz; BSopt MHz; BSopt; BLopt CONDITIONS MIN. TYP. UNIT
April 1991
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
PACKAGE OUTLINE
BF997
handbook, full pagewidth
0.75 0.60
0.150 0.090
0.88
0.48
MBC845
VIEW
Dimensions also Soldering recommendations.
Fig.3 SOT143.
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale. This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
April 1991
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