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BF547 wideband transistor Product specification File under Discre
Top Searches for this datasheetBF547 wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification wideband transistor FEATURES Feedback capacitance typ. Stable oscillator operation High current gain Good thermal stability. APPLICATIONS intended TV-tuner applications used mixer and/or oscillator. PINNING view handbook, columns BF547 DESCRIPTION cost transistor plastic SOT23 package. MSB003 base emitter collector DESCRIPTION Marking code: E16. Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCEO VCBO VEBO Ptot Note temperature soldering point collector pin. LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VCEO VCBO VEBO Ptot Tstg Note temperature soldering point collector pin. September 1995 PARAMETER collector-emitter voltage collector-base voltage emitter-base voltage peak collector current total power dissipation storage temperature range junction temperature note open base open emitter open collector CONDITIONS MIN. MAX. +150 UNIT PARAMETER collector-emitter voltage collector-base voltage emitter-base voltage peak collector current total power dissipation transition frequency feedback capacitance note open base open emitter open collector CONDITIONS MIN. MAX. UNIT Philips Semiconductors Product specification wideband transistor THERMAL CHARACTERISTICS SYMBOL Note temperature soldering point collector pin. CHARACTERISTICS unless otherwise specified. SYMBOL ICBO Note maximum unilateral power gain, assuming zero PARAMETER collector cut-off current current gain transition frequency feedback capacitance maximum unilateral power gain; note CONDITIONS MIN. TYP. PARAMETER from junction soldering point note CONDITIONS VALUE BF547 UNIT MAX. UNIT handbook, halfpage MBB401 MBB397 handbook, halfpage Ptot (mW) (oC) (mA) Fig.3 Fig.2 Power derating curve. current gain function collector current. September 1995 Philips Semiconductors Product specification wideband transistor BF547 MBB474 handbook, halfpage handbook, halfpage MBB399 (pF) (GHz) 10-1 (mA) MHz. MHz. Fig.4 Feedback capacitance function collector-base voltage Fig.5 Transition frequency function collector current. handbook, halfpage MBB407 MBB408 handbook, halfpage (dB) (dB) (mA) (MHz) MHz. Fig.6 Maximum unilateral power gain function collector current. Fig.7 Maximum unilateral power gain function frequency. September 1995 Philips Semiconductors Product specification wideband transistor BF547 handbook, halfpage MBB398 handbook, halfpage MBB409 (dB) 10-1 10-2 10-1 (mA) 10-1 (mA) IC/IB MHz. Fig.8 Collector-emitter saturation voltage function collector current. Fig.9 Common emitter noise figure function collector current. handbook, halfpage MBB410 handbook, halfpage MBB413 1000 (mS) (mS) 1000 (mS) (mS) Fig.10 Common base input admittance (Y11). Fig.11 Common base forward admittance (Y21). September 1995 Philips Semiconductors Product specification wideband transistor BF547 handbook, halfpage (mS) MBB411 handbook, halfpage MBB412 -0.5 (mS) 1000 1000 -1.0 -1.5 -2.0 -2.5 -0.7 -0.5 -0.3 (mS) -0.1 (mS) Fig.12 Common base reverse admittance (Y12). Fig.13 Common base output admittance (Y22). September 1995 Philips Semiconductors Product specification wideband transistor BF547 handbook, full pagewidth MBB403 Fig.14 Common emitter input reflection coefficient (S11). handbook, full pagewidth 120o 150o 180o 150o 120o MBB405 Fig.15 Common emitter forward transmission coefficient (S21). September 1995 Philips Semiconductors Product specification wideband transistor BF547 handbook, full pagewidth 120o 150o 180o 150o 120o MBB406 Fig.16 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth MBB404 Fig.17 Common emitter output reflection coefficient (S22). September 1995 Philips Semiconductors Product specification wideband transistor Table Common base Y-parameters; (MHz) 1000 Table REAL (mS) 69.0 60.4 45.0 34.3 27.7 24.0 21.5 20.0 18.6 18.3 17.8 IMAG. (mS) -10.2 -20.6 -27.4 -26.4 -23.3 -20.4 -18.0 -15.6 -14.0 -12.8 -11.7 REAL (mS) -68.0 -58.0 -39.1 -25.4 -17.2 -11.7 -7.8 -5.3 -3.0 -1.3 -0.1 IMAG. (mS) 12.3 25.6 34.5 34.0 31.1 27.6 25.0 22.6 20.2 18.7 17.1 REAL (mS) -0.02 -0.06 -0.10 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 IMAG. (mS) -0.1 -0.3 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 REAL (mS) -0.01 -0.08 0.19 0.29 0.37 0.45 0.53 0.60 0.69 0.82 0.95 BF547 IMAG. (mS) Common base Y-parameters; IMAG. (mS) -35.7 -62.0 -57.8 -46.9 -38.6 -32.8 -28.4 -25.2 -22.6 -20.7 -19.1 REAL (mS) -130.5 -91.1 -46.0 -26.4 -16.6 -11.0 -6.3 -3.3 -0.6 IMAG. (mS) 38.8 67.9 64.7 53.8 45.8 39.8 35.0 31.4 27.6 25.2 23.0 REAL (mS) -0.06 -0.20 -0.30 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 IMAG. (mS) -0.2 -0.5 -0.7 -0.8 -1.0 -1.3 -1.4 -1.6 -1.9 -2.1 -2.3 REAL (mS) -0.06 0.21 0.38 0.47 0.58 0.63 0.71 0.80 0.88 1.01 1.15 IMAG. (mS) (MHz) 1000 REAL (mS) 132.6 96.3 54.7 37.5 29.2 25.3 22.0 20.3 18.7 17.8 17.3 September 1995 Philips Semiconductors Product specification wideband transistor Table Common base Y-parameters; (MHz) 1000 Table REAL (mS) 189.0 108.5 55.2 37.1 28.8 24.7 21.2 19.3 17.2 16.4 15.8 IMAG. (mS) -79.6 -99.0 -76.2 -59.0 -47.6 -40.2 -35.0 -31.0 -27.5 -25.2 -23.0 REAL (mS) -185.5 -101.4 -44.6 -24.3 -14.6 -8.6 -3.4 -0.2 IMAG. (mS) 83.0 105.4 82.8 65.7 54.4 46.7 40.8 36.2 31.1 28.3 25.5 REAL (mS) -0.10 -0.30 -0.50 -0.50 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 IMAG. (mS) -0.3 -0.5 -0.7 -0.9 -1.0 -1.3 -1.5 -1.7 -1.9 -2.1 -2.3 REAL (mS) -0.09 0.30 0.44 0.60 0.69 0.75 0.84 0.93 1.00 1.15 1.31 BF547 IMAG. (mS) Common base Y-parameters; IMAG. (mS) -113.8 -114.0 -81.1 -62.1 -50.0 -42.3 -36.4 -32.0 -28.2 -25.7 -23.5 REAL (mS) -202.6 -96.4 -41.7 -22.0 -12.5 -6.1 -1.2 IMAG. (mS) 118.1 120.1 87.7 68.6 56.9 48.2 41.6 36.7 31.3 28.1 24.9 REAL (mS) -0.20 -0.40 -0.50 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 IMAG. (mS) -0.3 -0.5 -0.7 -0.8 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1 -2.3 REAL (mS) IMAG. (mS) (MHz) 1000 REAL (mS) 206.5 104.3 53.1 35.9 28.1 23.4 20.1 18.2 16.2 15.5 14.7 September 1995 Philips Semiconductors Product specification wideband transistor PACKAGE OUTLINE BF547 handbook, full pagewidth 0.150 0.090 0.95 0.48 0.38 VIEW 0.55 0.45 MBC846 Dimensions Fig.18 SOT23. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale. This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications. September 1995 Other recent searchesZRL-1200+ - ZRL-1200+ ZRL-1200+ Datasheet TFDU4201A - TFDU4201A TFDU4201A Datasheet PVW-9FHR - PVW-9FHR PVW-9FHR Datasheet LAN9311 - LAN9311 LAN9311 Datasheet LAN9311i - LAN9311i LAN9311i Datasheet IN74ACT11 - IN74ACT11 IN74ACT11 Datasheet HCPL-3180 - HCPL-3180 HCPL-3180 Datasheet e6355 - e6355 e6355 Datasheet BUK454-200A - BUK454-200A BUK454-200A Datasheet AN6052 - AN6052 AN6052 Datasheet
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