P-Channel 40-V (D-S) 175° MOSFET CHARACTERISTICS P-Channel V

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P-Channel 40-V (D-S) 175° MOSFET CHARACTERISTICS P-Channel V

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SPICE Device Model SUM110P04-04L
P-Channel 40-V (D-S) 175° MOSFET
CHARACTERISTICS
P-Channel Vertical DMOS Macro Model (Subcircuit Model) Level Apply both Linear Switching Application Accurate over 125°C Temperature Range Model Gate Charge, Transient, Diode Reverse Recovery Characteristics
DESCRIPTION
attached spice model describes typical electrical characteristics p-channel vertical DMOS. subcircuit mode extracted optimized over 125°C temperature ranges under pulsed 0-to-10V gate drive. saturated output impedance best gate bias near threshold voltage. novel gate-to-drain feedback capacitance network used model gate charge characteristics while avoiding convergence difficulties switched model. model parameter values optimized provide best measured electrical data intended exact physical interpretation device.
SUBCIRCUIT MODEL SCHEMATIC
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits. Document Number: 72621 27-Oct-03 www.vishay.com
SPICE Device Model SUM110P04-04L
SPECIFICATIONS 25°C UNLESS OTHERWISE NOTED) Parameter Static
Gate Threshold Voltage On-State Drain Current
Symbol
Test Conditions
Simulated Data
1384 0.0033 0.0050 0.0059 0.0048 0.92
Measured Data
Unit
VGS(th) ID(on)
VGS, 250µA 10V,
0.0034 0.0050
Drain-Source On-State Resistancea
rDS(on)
10V, 30A, 125°C 10V, 30A, 175°C 4.5V,
Forward Transconductance Diode Forward Voltagea
15V, 110A 85A,
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
Ciss Coss Crss
11030 25V, 1MHz 1619 1023 20V, 10V, 110A 20V, 0.18 110A, VGEN 10V,
11200 1650 1200
Gate-Source Charge Gate-Drain Charge
Turn-On Delay Time Rise Time
td(on)
Turn-Off Delay Time Fall Time
td(off)
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing. Independent operating temperature.
www.vishay.com
Document Number: 72621 27-Oct-03
SPICE Device Model SUM110P04-04L
COMPARISON MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 72621 27-Oct-03
www.vishay.com

P-Channel 40-V (D-S) 175° MOSFET CHARACTERISTICS P-Channel V

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