N-Channel 40-V (D-S), 175°C MOSFET CHARACTERISTICS N-Channel

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N-Channel 40-V (D-S), 175°C MOSFET CHARACTERISTICS N-Channel

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SPICE Device Model SUM110N04-04
N-Channel 40-V (D-S), 175°C MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS Macro Model (Model Subcircuit) Level Apply both Linear Switching Application Accurate over 125°C Temperature Range Model Gate Charge, Transient, Diode Reverse Recovery Characteristics
DESCRIPTION
attached spice model describes typical electrical characteristics n-channel vertical DMOS. subcircuit mode extracted optimized over 125°C temperature ranges under pulsed 0-to-10V gate drive. saturated output impedance best gate bias near threshold voltage. novel gate-to-drain feedback capacitance network used model gate charge characteristics while avoiding convergence difficulties switched model. model parameter values optimized provide best measured electrical data intended exact physical interpretation device.
SUBCIRCUIT MODEL SCHEMATIC
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits. Document Number: 72197 20-Mar-03 www.vishay.com
SPICE Device Model SUM110N04-04
SPECIFICATIONS 25°C UNLESS OTHERWISE NOTED) Parameter Static
Gate Threshold Voltage On-State Drain Current
Symbol
Test Conditions
Simulated Data
1154 0.0028 0.0045 0.0054 0.93
Measured Data
Unit
VGS(th) ID(on)
VGS, 250µA 10V,
0.0028
Drain-Source On-State Resistancea
rDS(on)
10V, 30A, 125°C 10V, 30A, 175°C
Forward Voltagea
110A,
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Turn-On Delay Timec Rise Time
Ciss Coss Crss td(on) td(off) 110A, di/dt A/µs 30V, 0.47 110A, VGEN 10V, 30V, 10V, 110A 10V, 1MHz
6750 1085
6800 1110
Turn-Off Delay Timec Fall Timec Source-Drain Reverse Recovery Time
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing. Independent operating temperature.
www.vishay.com
Document Number: 72197 20-Mar-03
SPICE Device Model SUM110N04-04
COMPARISON MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 72197 20-Mar-03
www.vishay.com

N-Channel 40-V (D-S), 175°C MOSFET CHARACTERISTICS N-Channel

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