P-Channel 20-V (D-S) MOSFET CHARACTERISTICS P-Channel Vertic
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SPICE Device Model Si1413DH
P-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
P-Channel Vertical DMOS Macro Model (Subcircuit Model) Level Apply both Linear Switching Application Accurate over 125°C Temperature Range Model Gate Charge, Transient, Diode Reverse Recovery Characteristics
DESCRIPTION
attached spice model describes typical electrical characteristics p-channel vertical DMOS. subcircuit model schematic extracted optimized over 125°C temperature ranges under pulsed 0-to-5V gate drive. saturated output impedance best gate bias near threshold voltage. novel gate-to-drain feedback capacitance network used model gate charge characteristics while avoiding convergence difficulties switched model. model parameter values optimized provide best measured electrical data intended exact physical interpretation device.
SUBCIRCUIT MODEL SCHEMATIC
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits. Document Number: 71987 21-Aug-02 www.vishay.com
SPICE Device Model Si1413DH
SPECIFICATIONS 25°C UNLESS OTHERWISE NOTED) Parameter Static
Gate Threshold Voltage On-State Drain Current
Symbol
Test Conditions
Simulated Data
0.80 0.098 0.132 0.178 -0.80
Measured Data
Unit
VGS(th) ID(on)
VGS, -250 -4.5 -4.5 -2.9
0.095 0.125 0.180 -0.80
Drain-Source On-State Resistance
rDS(on)
-2.5 -2.4 -1.8 -1.0
Forward Transconductancea Diode Forward Voltage
-2.9 -1.4
Dynamic
Total Gate Chargeb Gate-Source Charge Gate-Drain Chargeb Turn-On Delay Timeb Rise Time
td(on) td(off) VGEN -4.5 -4.5 -2.9
Turn-Off Delay Timeb Fall Timeb
Notes Pulse test; pulse width duty cycle Guaranteed desing, subject production testing.
www.vishay.com
Document Number: 71987 21-Aug-02
SPICE Device Model Si1413DH
COMPARISON MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 71987 21-Aug-02
www.vishay.com
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