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N-Channel 40-V (D-S) 200°C MOSFET CHARACTERISTICS N-Channel


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SPICE Device Model SUM110N04-02L
N-Channel 40-V (D-S) 200°C MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS Macro Model (Model Subcircuit) Level Apply both Linear Switching Application Accurate over 125°C Temperature Range Model Gate Charge, Transient, Diode Reverse Recovery Characteristics
DESCRIPTION
attached spice model describes typical electrical characteristics n-channel vertical DMOS. subcircuit mode extracted optimized over 125°C temperature ranges under pulsed 0-to-10V gate drive. saturated output impedance best gate bias near threshold voltage. novel gate-to-drain feedback capacitance network used model gate charge characteristics while avoiding convergence difficulties switched model. model parameter values optimized provide best measured electrical data intended exact physical interpretation device.
SUBCIRCUIT MODEL SCHEMATIC
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits. Document Number: 71687 26-Aug-01 www.vishay.com
SPICE Device Model SUM110N04-02L
SPECIFICATIONS 25°C UNLESS OTHERWISE NOTED) Parameter Static
Gate Threshold Voltage On-State Drain Current
Symbol
Test Condition
Simulated Data
2213 0.00181 0.0027 0.0034 0.0030 0.93
Measured Data
Unit
VGS(th) ID(on)
VGS, 250µA 10V,
0.00185 0.0031
Drain-Source On-State Resistance
rDS(on)
10V, 30A, 125°C 10V, 30A, 200°C 4.5V,
Forward Transconductance Forward Voltage
15V, 110A,
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge
Ciss Coss Crss td(on)
7169 25V, 1MHz 1394 30V, 10V, 110A 30V, 0.35 110A, VGEN 10V, 110A, di/dt A/µs
7300 1380
Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec Reverse Recovery Time
td(off)
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing. Independent operating temperature.
www.vishay.com
Document Number: 71687 26-Aug-01
SPICE Device Model SUM110N04-02L
COMPARISON MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 71687 26-Aug-01
www.vishay.com

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