The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.    


Datasheet Search Engine   
 
Part # or Description: • 5V RS232 Driver • 2SC5066* • "Real Time Clock" • "USB connector" • "blue led" 5mm • 10 watt zener diode • 2N3055* motorola
 
Search Tip: Try entering the part number only. Include a wildcard (eg. lm317* or 1n4148*)

 

 

N-Channel 20-V (D-S) MOSFET CHARACTERISTICS N-Channel Vertic


Datasheet Thumbnail

  

Download PDF



Top Searches for this datasheet



SPICE Device Model Si1032R
N-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
N-Channel Vertical DMOS Macro Model (Subcircuit Model) Level Apply both Linear Switching Application Accurate over 125°C Temperature Range Model Gate Charge, Transient, Diode Reverse Recovery Characteristics
DESCRIPTION
attached spice model describes typical electrical characteristics n-channel vertical DMOS. subcircuit model extracted optimized over 125°C temperature ranges under pulsed 0-to-5V gate drive. saturated output impedance best gate bias near threshold voltage. novel gate-to-drain feedback capacitance network used model gate charge characteristics while avoiding convergence difficulties switched model. model parameter values optimized provide best measured electrical data intended exact physical interpretation device.
SUBCIRCUIT MODEL SCHEMATIC
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits. Document Number: 70703 02-May-02 www.vishay.com
SPICE Device Model Si1032R
SPECIFICATIONS 25°C UNLESS OTHERWISE NOTED) Parameter Static
Gate Threshold Voltage On-State Drain Current
Symbol
Test Conditions
Simulated Data
0.60 0.50 0.58 0.70 0.78 0.80 0.70
Measured Data
0.70
Unit
VGS(th) ID(on)
VGS, 250µA 4.5V 4.5V, 200mA
Drain-Source On-State Resistancea
rDS(on)
2.5V, =175mA 1.8V, 150mA 1.5V, 40mA
Forward Transconductancea Diode Forward Voltage
10V, 200mA 150mA,
0.50
Dynamic
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
td(on) td(off) 10V, 200mA, VGEN 4.5V, 10V, 4.5V, 150mA
0.68 0.075 0.225
0.75 0.075 0.225
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
www.vishay.com
Document Number: 70703 02-May-02
SPICE Device Model Si1032R
COMPARISON MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 70703 02-May-02
www.vishay.com

Other recent searches


TMXE84622 - TMXE84622   TMXE84622 Datasheet
TLCS-900 - TLCS-900   TLCS-900 Datasheet
MSP5000 - MSP5000   MSP5000 Datasheet
MAX3822 - MAX3822   MAX3822 Datasheet
LSI402Z - LSI402Z   LSI402Z Datasheet
K4S560432B - K4S560432B   K4S560432B Datasheet
ADT7473 - ADT7473   ADT7473 Datasheet
2SC1403 - 2SC1403   2SC1403 Datasheet

 

Privacy Policy | Disclaimer
© 2012 Datasheet Archive