N-Channel 60-V (D-S) 200°C MOSFET CHARACTERISTICS P-Channel
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SPICE Device Model SUM110N06-04L
N-Channel 60-V (D-S) 200°C MOSFET
CHARACTERISTICS
P-Channel Vertical DMOS Macro Model (Subcircuit Model) Level Apply both Linear Switching Application Accurate over 125°C Temperature Range Model Gate Charge, Transient, Diode Reverse Recovery Characteristics
DESCRIPTION
attached spice model describes typical electrical characteristics n-channel vertical DMOS. subcircuit model extracted optimized over 125°C temperature ranges under pulsed 0-to10V gate drive. saturated output impedance best gate bias near threshold voltage.
SUBCIRCUIT MODEL SCHEMATIC
novel gate-to-drain feedback capacitance network used model gate charge characteristics while avoiding convergence difficulties switched model. model parameter values optimized provide best measured electrical data intended exact physical interpretation device.
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits. Document Number: 70523 14-Jan-02 www.vishay.com
SPICE Device Model SUM110N06-04L
SPECIFICATIONS 25°C UNLESS OTHERWISE NOTED) Parameter Static
Gate Threshold Voltage On-State Drain Current
Symbol
Test Condition
Simulated Data
1751 0.0026 0.0037 0.0044
Measured Data
Unit
VGS(th) ID(on)
VGS, 250µA 10V, 4.5V,
0.0028 0.0040
Drain-Source On-State Resistance
rDS(on)
10V, 30A, 125°C 10V, 30A, 200°C
0.0058 0.93
Forward Transconductancea Forward Voltage
15V, 110A,
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge
Ciss Coss Crss td(on)
25V,
7380 1079
7500 1050
30V, 10V, 110A
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Reverse Recovery Time
td(off)
30V, 0.40 110A, VGEN 10V, 110A, di/dt 100A/µs
Notes Pulse test; pulse width duty cycle Guaranteed design, subject production testing. Independent operating temperature.
www.vishay.com
Document Number: 70523 14-Jan-02
SPICE Device Model SUM110N06-04L
COMPARISON MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 70523 14-Jan-02
www.vishay.com
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