N-Channel 75-V (D-S) 200°C MOSFET CHARACTERISTICS P-Channel

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N-Channel 75-V (D-S) 200°C MOSFET CHARACTERISTICS P-Channel

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SPICE Device Model SUM110N08-05
N-Channel 75-V (D-S) 200°C MOSFET
CHARACTERISTICS
P-Channel Vertical DMOS Macro Model (Subcircuit Model) Level Apply both Linear Switching Application Accurate over 125°C Temperature Range Model Gate Charge, Transient, Diode Reverse Recovery Characteristics
DESCRIPTION
attached spice model describes typical electrical characteristics n-channel vertical DMOS. subcircuit model extracted optimized over 125°C temperature ranges under pulsed 0-to10V gate drive. saturated output impedance best gate bias near threshold voltage.
SUBCIRCUIT MODEL SCHEMATIC
novel gate-to-drain feedback capacitance network used model gate charge characteristics while avoiding convergence difficulties switched model. model parameter values optimized provide best measured electrical data intended exact physical interpretation device.
This document intended SPICE modeling guideline does constitute commercial product data sheet. Designers should refer appropriate data sheet same number guaranteed specification limits. Document Number: 70511 08-Jan-02 www.vishay.com
SPICE Device Model SUM110N08-05
SPECIFICATIONS 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit
Static
Gate Threshold Voltage On-State Drain Current
VGS(th) ID(on)
VGS, 250µA 10V, 10V, 30A,
1197 0.0038 0.0063 0.0038
Drain-Source On-State Resistancea
rDS(on)
125°C 10V, 30A, 200°C
0.0084 0.92
Forward Transconductancea Forward Voltage
15V, 110A,
Dynamic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge
Ciss Coss Crss td(on)
25V,
7663
7900
35V, 10V, 110A
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Reverse Recovery Time
td(off)
35V, 0.40 110A, VGEN 10V, 85A, di/dt 100A/µs
Notes: Pulse test; pulse width duty cycle Guaranteed design, subject production testing.
Independent operating temperature.
www.vishay.com
Document Number: 70511 08-Jan-02
SPICE Device Model SUM110N08-05
COMPARISON MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 70511 08-Jan-02
www.vishay.com

N-Channel 75-V (D-S) 200°C MOSFET CHARACTERISTICS P-Channel

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