1025 1150 VOLTS INTERNAL INPUT/OUTPUT MATCHING POUT WATTS MINIMUM COMM
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MSC1150M
1025 1150 VOLTS INTERNAL INPUT/OUTPUT MATCHING POUT WATTS MINIMUM COMMON BASE CONFIGURATION
DESCRIPTION:
MSC1150M bipolar transistor specifically designed high peak pulse power applications such DME/TACAN. This device capable withstanding minimum 20:1 load VSWR phase angle under full rated conditions. Internal impedance matching provides consistent broadband performance.
ABSOLUTE MAXIMUM RATINGS (Tcase
Symbol
PDISS Power Dissipation Device Current Collector-Supply Voltage* Junction Temperature Storage Temperature
Parameter
+200
Value
Unit
Thermal Data
MSCXXXX.PDF 01-19-99
Advanced Power Technology reserves right change, without notice, specifications information contained herein. Visit site WWW.ADVANCEDPOWER.COM contact factory direct.
MSC1150M
RTH(J-C) Thermal Resistance Junction-case
STATIC
ELECTRICAL SPECIFICATIONS (Tcase (Tcase
Symbol
BVCBO BVEBO BVCER ICES
Test Conditions Min.
Value Typ.
Max.
-12.5
Unit
DYNAMIC
Symbol
POUT Condition
Test Conditions Min.
1025 1150 1025 1150 1025 1150 Pulse Width 10uS Duty Cycle
Value Typ.
Max.
Unit
IMPEDANCE DATA
FREQ 1025 1090 1150 j5.0 j3.5 j2.7 j6.2 j5.5 j5.2
MSCXXXX.PDF 01-19-99
MSC1150M
PACKAGE MECHANICAL DATA
MSCXXXX.PDF 01-19-99
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