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ISO9001 Certified MIL-PRF-19500 POWER DISCRETE SEMICONDUCTORS


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ADVANCED POWER TECHNOLOGY
ISO9001 Certified MIL-PRF-19500
POWER DISCRETE SEMICONDUCTORS
TECHNOLOGY NEXT POWER.
Advanced Power Technology
Technology Beginning 1984 with introduction Power IV®, maintained position forefront power semiconductor technology. focus high voltage, high power high performance segments this market. commitment maintain enhance this position technological leader controlled devices FREDs deliver products which contribute customers' success delivering higher performance power systems.
Service Outstanding technology only part story. global network stocking distributors, representatives applications engineers place support phases your product design, evaluation procurement activities. world which demands superior execution, we've awards service leader.
Quality commitment excellence things Whether evaluating quality products, technical assistance, customer service quality internal communications systems, excellence standard. understand that ISO9001, MIL-PRF-19500 only beginning.
What's
Charge/Low Capacitance Power VIMOSFETs FREDFETs Linear MOSFETs Expanded Hermetic Product Offering Power MOSFETs FREDFETs Thunderbolt IGBT. Capable replacing MOSFETs 150kHz Operation Fast IGBT 40kHz Operation Center-Tap FREDs 200V 1000V High Frequency FREDs Replacement GaAs Rectifiers Packages Tape reel PAK, T-MAXand TO-267 MOSFETs Operation 100MHz
Table Contents
POWER VIMOSFETs FREDFETs
MOSFETs
LINEAR MOSFETS GENERATION POWER MOSFETs FREDFETs IGBT's
HERMETIC MOSFETs
20-21
8-13
HERMETIC IGBT's FREDs
14-15
CUSTOM PRODUCTS
FAST RECOVERY EPITAXIAL DIODES (FREDS)
16-18
SALES OFFICES
BACK COVER
Packaging Information
Package TO-247 T-MAXTO-220 ISOTOP TO-3 TO-264 Tape Reel Quantity Tube UNITS UNITS UNITS UNITS UNITS UNITS UNITS 400/REEL
Visit APT's Website Download Datasheets http://www.advancedpower.com
Series POWER
WITH BENEFITS POWER V®.PLUS
Gate Charge Capacitances
advanced designs, thicker gate oxide, shallower device junctions provide significant reductions gate charge capacitances shown table below. benefits include reduction gate driver requirements improved efficiencies.
Faster Switching Lower Switching Losses
lower capacitances combined with internal gate resistance resulting from advanced designs unique metal gate structure provide reduction total switching time compared POWER VTM. This dramatically improved switching efficiency enables higher frequency operation smaller power supplies.
Comparison Parameters Technology Volt Watt MOSFET
GATE Charge 5020BN Series VI5017BLC Improvement Series Improvement Series
Parameter
5017BVR
RDS, Amps Ciss, Crss, EAS,
2890
4400 1300
3025 1300
Series POWER
BVDSS Volts 1000 RDS(ON) Ohms 1.000 0.860 0.200 0.170 0.150 0.040 0.038 1.000 0.860 0.200 0.170 0.040 0.038 0.500 0.400 0.140 0.100 0.080 0.022 0.018 0.500 0.400 0.140 0.100 0.080 0.022 0.018 0.500 0.250 0.100 0.080 0.050 (cont) Amps Watts Ciss(pF) Crss(pF) 2330 2835 2500 3025 3025 3100 3400 2330 2835 2500 3025 3100 3400 5000 5830 3650 5200 6200 6400 7600 5000 5830 3650 5200 6200 6400 7600 5000 11250 5200 6200 11350 Qg(nC) 1210 1300 1300 1300 1300 1300 1300 1210 1300 1300 1300 1300 1300 2500 3000 1600 2500 3000 2500 3000 2500 3000 1600 2500 3000 2500 3000 2500 3600 2500 3000 3600 Part Number
MOSFETs
Samples Available 1Q00 2Q00 2Q00 1Q00 1Q00 1Q00 1Q00 2Q00 2Q00 2Q00 2Q00 1Q00 1Q00 2Q00 2Q00 2Q00 2Q00 1Q00 1Q00 2Q00 2Q00 2Q00 1Q00 1Q00 1Q00 1Q00 Package Style
APT1001RBLC APT10086BLC APT5020BLC APT5017BLC APT5015BLC APT20M40BLC APT20M38BLC APT1001RSLC APT10086SLC APT5020SLC APT5017SLC APT20M40SLC APT20M38SLC APT10050B2LC APT10040B2LC APT5014B2LC APT5010B2LC APT50M80B2LC APT20M22B2LC APT20M18B2LC APT10050LLC APT10040LLC APT5014LLC APT5010LLC APT50M80LLC APT20M22LLC APT20M18LLC APT10050JLC APT10025JLC APT5010JLC APT50M80JLC APT50M50JLC
TO-247
1000
1000
T-MAX
1000
TO-264
1000
ISOTOP®
TO-247
T-Max
TO-264
TO-247
PAK[S]
T-MAX[B2]
TO-264[L]
ISOTOP®[J] (ISOLATED BASE)
Series POWER
BVDSS Volts 1000 RDS(ON) Ohms 1.100 0.860 0.200 0.170 0.040 0.038 0.500 0.140 0.100 0.080 0.022 0.018 0.500 0.140 0.100 0.080 0.022 0.018 0.500 0.250 0.100 0.080 0.050 (cont) Amps Watts Ciss (pF) 2300 2800 2800 3000 3100 3400 5000 4100 5600 6700 6400 7600 5000 4100 5600 6700 6400 7600 5000 11300 5600 6700 12600 Crss (pF) (nC) (nsecs) 1210 1300 1300 1300 1300 1300 2500 1600 2500 3000 2500 3000 2500 1600 2500 3000 2500 3000 2500 3600 2500 3000 3600
FREDFETs
Samples Package Available Style 2Q00 2Q00 1Q00 1Q00 2Q00 2Q00 2Q00 2Q00 2Q00 2Q00 2Q00 2Q00 2Q00 2Q00 1Q00 2Q00 2Q00 2Q00 2Q00 2Q00 1Q00 2Q00 2Q00
Part Number APT1001R1BFLC APT10086BFLC APT5020BFLC APT5017BFLC APT20M40BFLC APT20M38BFLC APT10050B2FLC APT5014B2FLC APT5010B2FLC APT50M80B2FLC APT20M22B2FLC APT20M18B2FLC APT10050LFLC APT5014LFLC APT5010LFLC APT50M80LFLC APT20M22LFLC APT20M18LFLC APT10050JFLC APT10025JFLC APT5010JFLC APT50M80JFLC APT50M50JFLC
TO-247
1000
T-MAX
1000
TO-264
1000
ISOTOP®
AVAILABLE HERMETIC PACKAGES
LINEAR MOSFETs
What Linear MOSFET?
MOSFET specifically designed more robust than standard MOSFET when operated with concurrent high voltage high current near conditions (>100msecs). applications. This Linear MOSFET provides 1.5-2.0 times capability high voltage compared previous technologies.
Technology Innovation
gain (low packing density) device provides best performance high voltage. modified proprietary interdigitated MOSFET technology develop lower gain device with enhanced performance high voltage, linear
Typical Applications:
-Active load above volts such dynamic loads testing power supplies, batteries, fuel cells, etc. -High voltage, high current constant current sources.
LINEAR MOSFET'S LINEAR MOSFETs
BVDSS Volts
RDS(ON) Ohms
ID(Cont.) Amps
Watts
SOA1 Watts
Part
Package Style
1000
0.60 0.12
18.0 43.0
APL1001J APL501J
ISOTOP®
*ISOTOP®[J]
*Not Scale
Power MOSFETs
generation high power, high voltage Power MOSFETs Based patented self aligned interdigitated open cell structure, this generation MOSFETs offers many advantages over previous generation over industry standard, closed cell devices. Lower RDS(ON) reduction on-resistance gained employing shallower junctions "overactive area" bonding increase channel packing density unit silicon. packing density been optimized minimize JFET resistance capacitances. Faster Switching Power utilizes resistance aluminum metal gate structure. This allows faster gate signal propagation than possible with conventional polysilicon gate structures. Power employs shorter gate fingers more efficient gate structure than previous generation further reduce series gate resistance. Multiple bond pads wires both source gate contacts have also reduced impedances. result decreased rise, delay fall times. Total switching time been reduced over previous generation. Avalanche Energy Rated Power devices 100% tested guaranteed avalanche energy. Leakage Current Process improvements have made possible substantial decrease over previous generation. Maximum values most products specified 25µA 25°C 250µA 125°C. Rugged Gate Improvements gate oxide processing allow specification high gate rupture voltage. Power MOSFETs specified continuous operation transient operation. Lower Cost less complex fabrication process, improved manufacturing yields reduced cycle times have contributed more cost-effective device.
Comparison Lowest RDS(ON) TO-247 Package Between Generation Power Previous Generation Power Breakdown Voltage 1200 1000 Generation Power RDS(ON) (mW) 1500 Previous Generation Power RDS(ON) (mW) -1000
Improvement
0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 2109876543 2109654321 0987654321 2109654321 2109654321 2109654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321 0987654321
devices offered TO-264 package made available T-MAXTM. page details. 1200 0.600 7700 3000 APT12060B2VR 1000 0.500 6600 2500 APT10050B2VR 0.400 7800 3000 APT10040B2VR 0.300 6600 2500 APT8030B2VR 0.240 7800 3000 APT8024B2VR 0.150 7500 2500 APT6015B2VR 0.110 8800 3000 APT6011B2VR 0.140 5600 1600 APT5014B2VR 0.100 7400 2500 APT5010B2VR 0.085 8700 3000 APT50M85B2VR 0.080 8700 3000 APT50M80B2VR 0.022 100** 8500 2500 APT20M22B2VR 0.018 100** 10,000 3000 APT20M18B2VR 0.011 100** 8600 2500 APT10M11B2VR 0.009 100** 10,000 3000 APT10M09B2VR BVDSS Volts 1200 1000 RDS(ON) Ohms 1.600 1.500 1.000 0.860 0.750 0.650 0.560 0.450 0.350 0.300 0.250 0.280 0.240 0.200 0.170 0.150 0.200 0.160 0.140 0.120 0.085 0.070 0.045 0.040 0.038 0.025 0.019 ID(Cont.) Amps 75** Watts Ciss(pF) 3050 3700 3050 3700 2700 3050 3700 2600 3450 3750 4300 2650 3600 3700 4400 4400 2650 3350 3600 4500 4100 4890 4050 4050 5100 4300 5100 1500 1210 1300 1210 1300 1210 1300 1210 1300 1300 1210 1300 1300 1300 1210 1300 1300 1300 1300 1300 1300 1300 1500 APT10M19BVR Part APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6045BVR APT6035BVR APT6030BVR APT6025BVR APT5028BVR APT5024BVR APT5020BVR APT5017BVR APT5015BVR APT4020BVR APT4016BVR APT4014BVR APT4012BVR APT30M85BVR APT30M70BVR APT20M45BVR APT20M40BVR APT20M38BVR APT10M25BVR
IDmax limited package
POWER MOSFETs
*T-MAX[B2] Package Style *TO-247[B]
TO-247
*Not Scale
T-Max
POWER MOSFETs
ID(Cont.) Amps 100** 100** Watts Ciss(pF) 6500 7700 6600 7800 6600 8800 5600 7500 8800 5600 7400 8700 8700 7410 8500 8500 10,000 8600 10,000 6500 15000 6600 7500 15000 6600 7700 14715 7500 8800 16500 7400 9000 16800 7410 16000 8500 18000 8500 9700 18000 8600 18000 2500 3000 2500 3000 2500 3000 1600 2500 3000 1600 2500 3000 3000 2500 2500 2500 3000 2500 3000 2500 3600 2500 1300 3600 2500 1300 3600 2500 1300 3600 2500 1300 3600 2500 3600 2500 3600 2500 1300 3600 2500 3600 Part APT12080LVR APT12060LVR APT10050LVR APT10040LVR APT8030LVR APT8024LVR APT6020LVR APT6015LVR APT6011LVR APT5014LVR APT5010LVR APT50M85LVR APT50M80LVR APT40M70LVR APT30M40LVR APT20M22LVR APT20M18LVR APT10M11LVR APT10M09LVR APT12080JVR APT12040JVR APT10050JVR APT10043JVR APT10025JVR APT8030JVR APT8028JVR APT8015JVR APT6015JVR APT6013JVR APT60M75JVR APT5010JVR APT50M85JVR APT50M50JVR APT40M70JVR APT40M35JVR APT30M40JVR APT30M19JVR APT20M22JVR APT20M19JVR APT20M11JVR APT10M11JVR APT10M07JVR Package Style
BVDSS Volts 1200 1000
1200 1000
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RDS(ON) Ohms 0.800 0.600 0.500 0.400 0.300 0.240 0.200 0.150 0.110 0.140 0.100 0.085 0.080 0.070 0.040 0.022 0.018 0.011 0.009 0.800 0.400 0.500 0.430 0.250 0.300 0.280 0.150 0.150 0.130 0.075 0.100 0.085 0.050 0.070 0.035 0.040 0.019 0.022 0.019 0.011 0.011 0.007
TO-264
*TO-264[L]
*ISOTOP®[J] (ISOLATED BASE)
*Not Scale
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devices offered TO-247 package made available PAK. page details. BVDSS Volts 1000 RDS(ON) Ohms 0.650 0.019 0.025 0.038 0.045 0.170 0.200 0.280 0.350 0.450 1.000 0.860 ID(Cont.) Amps Watts Ciss(pF) 3050 5100 4150 5100 4050 4400 3700 2650 3450 2600 3050 3700 1210 1500 1500 1300 1300 1300 1300 1210 1210 1300 APT8065SVR APT10M19SVR APT10M25SVR APT20M38SVR APT20M45SVR APT5017SVR APT5020SVR APT6035SVR APT5028SVR APT6045SVR APT1001RSVR APT10086SVR Part
IDmax limited package MOTOR DRIVE "BUCK" CONFIGURATION
POWER FACTOR CORRECTION "BOOST" CONFIGURATION
Reduced parts count discretes. Improved circuit performance reduced inductance.
Consult Factory other voltages.
"BOOST" CONFIGURATION 0.100 0.100
POWER MOSFET/FRED "COMBI" PRODUCTS
POWER MOSFETs
7410
7410
"BUCK" CONFIGURATION
2500 2500 APT5010JVRU2 APT5010JVRU3
*ISOTOP®[J] (ISOLATED BASE)
*Not Scale Package Style PAK[S]
D3PAK
POWER FREDFETs
FREDFET Technology Using proprietary platinum lifetime control process, performance intrinsic body drain diode Power MOSFET improved. Faster Intrinsic Diode Recovery reverse recovery time been reduced 250ns maximum, eliminating external FRED Schottky rectifiers certain circuit configurations. Improved Ruggedness ruggedness intrinsic diode also been improved, allowing commutative dv/dt rating 5V/ns. Other Benefits platinum process provides added advantages soft recovery, lower leakage current, lower recovery charge more temperature independent performance than alternative processes used improve intrinsic diode performance. Applications FREDFETs Power FREDFETs should specified under following conditions: Whenever intrinsic body drain diode MOSFET expected carry forward current. Examples Half Bridge, H-Bridge 3-Phase Bridge circuit topologies. soft switched circuits, where body diode carries current. Examples Phase Shift Controlled H-Bridge Resonant circuit topologies. MOSFET FREDFET Intrinsic Diode
FREDFET MOSFET
devices offered standard MOSFETs made available FREDFETs. page details.
987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 109654321 98787654321098765432 654321 109654321 109654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321 987654321
BVDSS Volts 1000 RDS(ON) Ohms 1.100 0.860 ID(Cont.) Amps Watts Ciss(pF) 3050 3700 trr(nsecs) Part 1210 1300 APT1001R1BVFR APT10086BVFR APT8065BVFR APT8056BVFR 0.750 2700 3050 3700 APT8075BVFR
Package Style
0.650 0.560 0.240
1210 1300
0.250 0.200 0.170
4300
1300
APT6025BVFR APT5024BVFR APT5020BVFR APT5017BVFR
TO-247
3600 3700 4400
1210 1300 1300
0.085
4100
1300
APT30M85BVFR APT30M70BVFR
0.070
4890
1300
*TO-247[B]
0.045
4050 5100
1300 1300
APT20M45BVFR APT20M38BVFR
0.038
0.025
4300
1500
APT10M25BVFR APT10M19BVFR
0.019
5100
1500
devices offered TO-247 package also made available page details. 0.200 0.045 3700 4050 APT5020SVFR
PAK[S] *Not Scale
1300
APT20M45SVFR
IDmax limited package
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devices offered TO-264 package also made available T-MaxTM. page details. BVDSS Volts 1000 1000 1000 RDS(ON) Ohms 0.022 0.018 0.022 0.018 0.022 0.011 0.040 0.019 0.100 0.085 0.050 0.300 0.150 0.400 0.500 0.250 0.009 0.100 0.085 0.300 0.240 0.500 0.400 0.009 0.100 0.085 0.080 0.300 0.240 0.040 0.110 0.110 ID(Cont.) Amps 100** 100** 100** 100** 100** 100** Watts Ciss(pF) 8500 10,000 10,000 10,000 8500 10,000 8500 18000 8500 18000 7400 9000 16300 6600 14715 6600 15000 8500 7400 8700 8800 6600 7800 6600 7800 7400 8700 8700 8800 6600 7800 7800 2500 3000 2500 3000 3000 3000 2500 3600 2500 3600 2500 3600 2500 3600 2500 2500 3000 3000 2500 3000 2500 3000 3000 3000 2500 3000 3000 2500 1300 3600 2500 3000 trr(nsecs) APT20M22B2VFR APT20M18B2VFR APT20M22LVFR APT20M18LVFR APT5010LVFR APT50M85LVFR APT5010B2VFR APT50M85B2VFR APT50M80B2VFR APT20M22JVFR APT20M11JVFR APT30M40JVFR APT30M19JVFR APT5010JVFR APT50M85JVFR APT50M50JVFR APT8030JVFR APT8015JVFR APT10050JVFR APT10025JVFR APT6011LVFR APT8030LVFR APT8024LVFR APT10050LVFR APT10040LVFR Part APT10M09LVFR APT30M40LVFR APT10M09B2VFR APT6011B2VFR APT8030B2VFR APT8024B2VFR APT10040B2VFR
IDmax limited package
POWER FREDFETs
*ISOTOP®[J] (ISOLATED BASE)
Package Style
*Not Scale *T-MAXTM[B2]
*TO-264[L]
TO-264
T-Max
IGBT Technology
Technology Non-Punch-Through IGBTs manufactured fabricating MOSFET structure surface lightly doped, n-substrate. layer needs grown substrate. wafer thinned 100µm after high temperature processes completed reduce n-drift region. junction required back wafer formed using implant light diffusion. Making region only thick keeps voltage drop this region controllable within very tight tolerances throughout wafer. This construction provides optimal tradeoff between VCE(SAT), switching speed ruggedness. full rated current, VCE(SAT) higher than technologies, under normal operating currents difference negligible. Faster Switching Faster turn-off speeds lower tail currents advantages technology. This primarily generation fewer minority carriers during operation devices.
Substrate
Easy Paralleling positive temperature coefficient VCE(SAT) makes paralleling IGBTs easy with MOSFETs. Tighter Electrical Parameters Distribution. technology fewer more easily controlled processing steps than with technologies. user expect less lot-to-lot variation electrical parameters than possible with devices. Leakage Current lifetime control used producing IGBTs, eliminating major cause leakage current alternative technologies.
Technology Technology
Structure
ASSIV TION ASSIV TION SOURCE OXIDE SOURCE OXIDE EMITTER DIELECTRIC DIELECTRIC EMITTER
Layer Layer
Improved High Temperature Operation turn-off speed tail current IGBT temperature dependent devices. These parameters remain relatively constant over entire operating temperature range, resulting approximately less dynamic losses high temperatures. Improved Ruggedness technology IGBTs avalanche energy, SCSOA RBSOA rated.
Collector Substrate/ Collector
Thickness: NPT=100µm
PT=400µm
Fast IGBT Family Designated "GF" part number, these devices designed operation 40kHz hard switching applications.
Thunderbolt IGBTFamily Designated "GT" part number, these devices designed operation 150kHz hard switching 300kHz resonant applications.
IGBT
BVCES Volts VCE(ON) Volts (25°C) Amps Amps Watts Part Number Package DISCRETE (IGBT ONLY)
Fast
1200
75** 100** 100**
APT11GF120KR APT20GF120KR APT8GT60KR APT12GT60KR APT15GT60KR APT20GT60KR APT30GT60KR APT15GF170BR APT20GF120BR APT33GF120BR APT12GT60BR APT15GT60BR APT20GT60BR APT30GT60BR APT40GT60BR APT60GT60BR APT50GF60BR APT60GT60JR APT50GF120B2R APT100GF60B2R APT50GF120LR APT100GF60LR
TO-220
Thunderbolt
*TO-220[K] TO-220
Fast
1700 1200
TO-247
TO-247
Thunderbolt
*TO-247[B]
1200
Fast
ISOTOP® T-MAX
TO-264
1200
TO-264
*TO-264[L]
COMBI (IGBT FRED)
Fast
1200
Thunderbolt
APT11GF120BRD APT20GF120BRD TO-247 APT15GT60BRD APT30GT60BRD APT33GF120B2RD APT50GF60B2RD APT33GF120LRD APT50GF60LRD APT40GF120JRD APT50GF120JRD APT60GF120JRD APT100GF60JRD APT60GT60JRD
T-Max
1200 1200 1200
T-MAXTO-264
*T-MAXTM[B2]
Fast
ISOTOP®
*ISOTOP®[J]
*Not Scale
limited package
FRED Technology
FRED Technology proprietary platinum lifetime control process results performance advantages FREDs built with alternative processes lifetime control. platinum produces "softer" faster recovery with optimal trade-off between trr. Improved High Temperature Operation reverse recovery silicon diodes degrades operating temperatures increase. advantage using platinum lifetime control less degradation performance high temperatures. assist designer, specified datasheets under operating conditions; i.e., 125°C, maximum rated current dI/dt rated voltage.
CENTER-TAP DUAL FREDS
Volts 1000 IF(AV) Amps** trr2(25°C) nsec trr3(100°C) VF(25°C) nsec Volts 1.15 1.15 IRM(25°C) Part APT15D100BCT APT30D100BCT APT15D60BCT APT30D60BCT APT15D40BCT APT30D40BCT APT30D20BCT APT60D100LCT
Package Style
1000
*TO-247[BCT] Common Cathode
APT60D60LCT APT60D40LCT APT60D20LCT
*TO-264[LCT] Common Cathode
CONSULT FACTORY THESE OTHER PACKAGE CONFIGURATIONS
Half Bridge Phase
*Not Scale
**All Ratings
DISCRETE FREDS
VRMM Volts 1200 1000 IF(AV) Amps trr2(25°C) nsec trr3(100°C) VF(25°C) nsec Volts 1.15 1.15 1.15 1.15 IRM(25°C) Part APT30D120B APT60D120B APT30D100B APT60D100B APT15D60B APT30D60B APT60D60B APT30D40B APT60D40B APT30D20B APT60D20B APT15D100K
Package Style
TO-247
1000 1200
*TO-247[B]
APT15D60K APT15D40K APT15D30K APT2X30D120J APT2X60D120J APT2X100D120J
*TO-220[K]
1000
1200
1000
APT2X30D100J APT2X60D100J APT2X100D100J APT2X30D60J *ISOTOP®[J] APT2X60D60J Antiparallel Configuration APT2X100D60J (ISOLATED BASE) APT2X30D40J APT2X60D40J APT2X100D40J APT2X60D20J APT2X100D20J APT2X31D120J APT2X61D120J APT2X101D120J APT2X31D100J APT2X61D100J APT2X101D100J APT2X31D60J *ISOTOP®[J] APT2X61D60J Parallel Configuration APT2X101D60J (ISOLATED BASE) APT2X31D40J APT2X61D40J APT2X101D40J APT2X61D20J APT2X101D20J *Not Scale
DISCRETE SURFACE MOUNT FREDS
Volts IF(AV) Amps trr2(25°C) nsec trr3(100°C) nsec VF(25°C) Volts IRM(25°C) Part Package Style
1.15
APT30D60S
D3PAK
APT30D40S APT30D20S PAK[S]
Higher Frequency FREDs
Standard FRED[1] Higher Frequency FRED[2]
Extremely Fast Recovery These FREDs capable replacing GaAs rectifiers high frequency applications MHz, fraction cost. using (2), much heavier platinum doped 300V FREDs series, considerable decrease reverse recovery time achieved standard 600V FREDs. This heavier concentration platinum produces FRED that specifically designed higher frequency applications where reduction switching losses most important higher specification tolerated.
ULTRAFAST SOFT RECOVERY DIODE PRODUCTS
HIGHER FREQUENCY FREDS
VRMM Volts IF(AV) Amps trr2(25°C) nsec 12.5 12.5 trr3(100°C) VF(25°C) nsec Volts IRM(25°C) Part APT30DS60B
Package Style
APT15DS60B APT30DS30B APT15DS30B
*TO-247[B]
*Not Scale
MOSFETs
Technology. MOSFETs optimized high power Class operation from 1100 MHz. geometry been designed high power efficiency gate loss. MOSFETs mounted isolation substrate create TO-247 common source configuration. source directly connected center heatsink tab; external insulator necessary. This provides maximum thermal efficiency without added expense assembly problems drain isolation. Internally, symmetric wire bonding schemes insure that both pinout versions each device perfect mirror image pairs. This configuration allows easy layout push-pull parallel pairs circuit board symmetry separation input output sections. High Voltage Operation Historically, MOSFETs operated maximum 50V. combining high voltage MOSFET technology with specific geometries, this limitation been removed. operation 300V possible. Higher Voltage Higher operating voltage means higher load impedances. 300W output 50V, load less than ohms. 125V, load impedance ohms. higher impedance allows fewer transformers combiners. Parallel devices still operate into reasonable convenient load impedance. Increasing operating voltage also lowers current required given power output, reducing size weight other components. Lower Cost insulators required Maximum thermal efficiency. internal insulator more efficient than external insulators. Simplified board layout symmetric pairs configuration Note: ARF446 through ARF450 devices based latest technology preferred devices designs. ARF440 through ARF445 based Power technology recommended designs.
MOSFETs
Volts POUT Watts dB(typ) 13.56 13.56 13.56 13.56 18.7 13.56 18.7 13.56 40.68 40.68 40.68 40.68 81.36 81.36 81.36 RqJC °C/W 0.75 0.75 0.75 0.75 0.60 0.60 0.55 0.55 0.55 0.55 0.76 0.76 0.26 Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Figure Part ARF440 ARF441 ARF442 ARF443 ARF444 ARF445 ARF446 ARF447 ARF448A ARF448B ARF449A ARF449B ARF450
Gate Source Drain
Figure
TO-247
Figure
TO-247
Drain Source Gate
*TO-247
Figure
*Not Scale
HERMETIC MOSFET PRODUCTS
BVDSS Volts RDS(ON) Ohms ID(Cont.) Amps Watts Ciss(pF) Qg(nC) Part Optional Surface Mount Pkg. Package Style 1000 4.000 APT1004RGN CoolPack1 *TO-257[G] (ISOLATED) 1000 2.000 4.000 0.450 0.320 0.400 0.415 0.300 0.315 11.8 14.0 13.0 12.0 15.0 14.0 1530 2600 2650 1430 2410 1500 2400 APT1002RCN APT1004RCN APT6045CVR APT5032CVR APT5040CNR 2N7228/JX/JV APT4030CNR 2N7227/JX/JV CoolPack1 CoolPack1 CoolPack1 CoolPack1 CoolPack1 CoolPack1 CoolPack1 CoolPack1 *TO-254[C] (ISOLATED)
1000
0.88 1.10
11.0 13.5 11.5 20.0 15.5 24.0 18.5 28.0 22.0 45.0
3700 3050 3700 3050 4300 3450 4400 3600 4500 3350 5100
APT10088HVR APT1001R1HVR APT8058HVR APT8067HVR APT6027HVR APT6037HVR APT5019HVR APT5026HVR APT4014HVR APT4018HVR APT20M40HVR
CoolPack2 CoolPack1 CoolPack2 CoolPack1 CoolPack2 CoolPack2 CoolPack2 CoolPack2 CoolPack2 CoolPack2 CoolPack2 *TO-258[H] (ISOLATED)
0.58 0.67
0.27 0.37
0.19 0.26
0.14 0.18
0.040
*Not Scale
HERMETIC MOSFET PRODUCTS
BVDSS Volts 1000 RDS(ON) Ohms 1.10 0.65 0.32 0.35 0.22 0.24 0.30 0.15 0.090 0.030 ID(Cont.) Amps 11.5 17.5 16.0 21.0 18.5 14.7 25.5 33.0 65.0** Watts Ciss(pF) 3050 3050 3750 3450 3700 3600 2650 3600 4100 4300 Qg(nC) Part APT1001R1AVR APT8065AVR APT6032AVR APT6035AVR APT5022AVR APT5024AVR APT5030AVR APT4015AVR APT30M90AVR APT10M30AVR Surface Mount Pkg. CoolPack1 CoolPack1 CoolPack2 CoolPack2 CoolPack2 CoolPack2 CoolPack1 CoolPack2 CoolPack2 CoolPack2 *TO-3[A] (NON-ISOLATED) Package Style
1000
0.57 0.17 0.12 0.082 0.026
17.3 31.5 40.0 44.0 65.0
6600 7500 7400 7410 8500
APT10057WVR APT6017WVR APT5012WVR APT40M82WVR APT20M26WVR
CoolPack3 CoolPack3 CoolPack3 CoolPack3 CoolPack3 *TO-267[W] (ISOLATED)
1000
0.250 0.075 0.05 0.035 0.013
33.0 60.5 74.5 89.0 146.0
15000 16500 16300 16000 18000
APT10025PVR APT60M75PVR APT50M50PVR APT40M35PVR APT20M13PVR *P-PACK (ISOLATED)
CONSULT FACTORY INFORMATION FRED, FREDFET IGBTs HERMETIC PACKAGE.
*CoolPack1 .450X.625X.130 inches
*CoolPack2 .550X.800X.145 inches
*CoolPack3 .980X1.23X.145 inches
CONSULT FACTORY INFORMATION SURFACE MOUNT PRODUCTS
CoolPackis trademark Microsemi Corporation
IDmax limited package
*Not Scale
BVCES Volts
(on) Volts
HERMETIC IGBT MOSFET PRODUCTS
Amps Amps Watts Part APT20GT60AR APT30GT60AR APT50GF60AR APT20GT60CR APT30GT60CR APT50GF60HR APT33GF120HR APT50GF120HR Package 65** 35** 35** 65** 65** TO-3 TO-254
1200
TO-258
PAGE TECHNOLOGY FEATURES BENEFITS
Volts IF(AV) Amps
HERMETIC FREDS
trr2(25C) nsec trr3(100C) nsec VF(25C) Volts IRM(25C) Part Configuration*** Package
APT15D60C APT15D40C APT15D30C APT30D60H APT60D60H APT30D40H APT60D40H APT30D20H APT60D20H APT30D60HCT APT30D40HCT APT30D20HCT
Discrete Discrete Discrete Discrete Discrete Discrete Discrete Discrete Discrete Center Center Center
TO-254[C]
TO-258[H]
PAGE TECHNOLOGY FEATURES BENEFITS ***Contact factory other current, voltages, package availability Half Bridge Common Anode Configuration
HERMETIC HIGHER FREQUENCY FREDS
VRMM Volts IF(AV) Amps trr2 (25C) nsec trr3(100C) nsec VF(25C) Volts IRM(25C) Part Number APT30DS60H APT15DS60H APT30DS30C APT15DS30C BENEFITS Package TO-258 TO-254 12.5 12.5 PAGE TECHNOLOGY FEATURES
IDmax limited package
hure ucts able
Hermetic Products
MIL-PRF-19500 certified supplier provide space level processing. addition MOSFETs shown this catalog, other MOSFETs, FREDFETs, IGBTs, FREDs, combinations these products provided hermetic packages. product need, have questions concerning processing capabilities certification levels, please contact your local representative directly.
Custom, Value-Added Solutions Meet Your Specific Power Application Requirements
addition broad line leading edge products this catalog, dedicated providing innovative solutions customers. This means working with customers solve their procurement, manufacturing application problems. known supplier that provides solutions that others cannot, will not, provide. These include, limited Custom products including special designs, processes, packaging. Supply chain management requirements. Strategic inventories allow unexpected changes demand. Special testing. Thermal power management. Hi-Rel Testing/Screening Application Specific Power Modules (ASPM) where power semiconductors combined with driver protection circuits meet your specific application requirements.
additional information contact your local Representative directly.
COLUMBIA STREET BEND, 97702 U.S.A. TEL: (541) 382-8028 1-800-522-0809 FAX: (541) 388-0364 http://www.advancedpower.com E-mail: custserv@advancedpower.com EUROPE CHEMIN MAGRET 33700 MERIGNAC FRANCE TEL: (33) (0)5 FAX: (33) (0)5
SALES OFFICES EASTERN TEL: (978) 686-5352 FAX: (978) 686-5441 E-mail: rsmeast@advancedpower.com EUROPE TEL: 33-557 FAX: 33-556 E-mail: rsmeurope@advancedpower.com
ASIA, SOUTH AMERICA, AUSTRALIA TEL: (541) 382-8028 FAX: (541) 388-0364 E-Mail: rsmrow@advancedpower.com
WESTERN TEL: (541) 382-8028 FAX: (541) 388-0364 E-Mail: rsmwest@advancedpower.com
registered trademark Advanced Power Technology, Inc.
1999
ISOTOP® registered trademark Thomson
reserves right change, without notice, specifications information contained herein.

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