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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

LD 271, LD 271 H LD 271 L, LD 271 HL

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 271, LD 271 H LD 271 L, LD 271 HL
Area not flat 0.6 0.4 9.0 8.2 7.8 7.5
2.54 mm spacing
Cathode Approx. weight 0.5 g
Chip position
GEX06239
Cathode 29 27 9.0 8.2
spacing 2.54mm
Area not flat Chip position Approx. weight 0.2 g
GEO06645
Features q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q long leads q Available in groups q Same package as SFH 300, SFH 203 Applications q IR remote control of hi-fi and TV-sets, video tape recorders, dimmers q Remote control of various equipment q Photointerrupters
fex06628
LD 271, LD 271 H LD 271 L, LD 271 HL
Typ Type LD 271 LD 271 L LD271 H LD271 HL Grenzwerte Maximum Ratings Bezeichnung Description
Bestellnummer Ordering Code Q62703-Q148 Q62703-Q833 Q62703-Q256 Q62703-Q838
Symbol Symbol
Wert Value - 55 .. + 100 100 5 130 3.5 220 330
Einheit Unit °C °C V mA A mW K / W
Top Tstg Tj VR IF IFSM Ptot RthJA
Semiconductor Group
LD 271, LD 271 H LD 271 L, LD 271 HL
Grad deg. mm2 mm mm µs
TCV TC
Semiconductor Group
LD 271, LD 271 H LD 271 L, LD 271 HL
Ie Ie typ.
OHRD1938
Radiant intensity
OHR01038
OHO00364
Semiconductor Group
LD 271, LD 271 H LD 271 L, LD 271 HL
OHR01041
OHR00257
OHR01879
Semiconductor Group