271, Area flat 2.54 spacing Cathode Approx. weight

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271, Area flat 2.54 spacing Cathode Approx. weight

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
271,
Area flat
2.54 spacing
Cathode Approx. weight
Chip position
GEX06239
Cathode
spacing 2.54mm
Area flat Chip position Approx. weight
GEO06645
wenn nicht anders angegeben/Dimensions unless otherwise specified.
Wesentliche Merkmale GaAs-IR-LED, hergestellt Schmelzepitaxieverfahren Hohe Hohe Impulsbelastbarkeit Lange Gruppiert lieferbar 300, Anwendungen IR-Fernsteuerung Fernseh- Videorecordern, Lichtdimmern Lichtschranken Gleich- Wechsellichtbetrieb Semiconductor Group
Features GaAs infrared emitting diode, fabricated liquid phase epitaxy process High reliability High pulse handling capability long leads Available groups Same package 300, Applications remote control hi-fi TV-sets, video tape recorders, dimmers Remote control various equipment Photointerrupters
1997-11-01
fex06628
14.0 13.0
11.4 11.0
271,
Type LD271 LD271 Grenzwerte Maximum Ratings Bezeichnung Description
Bestellnummer Ordering Code Q62703-Q148 Q62703-Q833 Q62703-Q256 Q62703-Q838
Package 3/4), 2.54-mm-Raster (1/10'') package 3/4), grey colored epoxy resin lens, solder tabs lead spacing 2.54 (1/10'')
Symbol Symbol
Wert Value
Einheit Unit
Betriebs- Lagertemperatur Operating storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Forward current Surge current Verlustleistung Power dissipation Thermal resistance
Top; Tstg IFSM Ptot RthJA
Semiconductor Group
1997-11-01
271,
Kennwerte Characteristics Bezeichnung Description Strahlung Wavelength peak emission Spektrale Bandbreite Imax Spectral bandwidth Imax Abstrahlwinkel Half angle Aktive Active chip area Abmessungen aktive Dimensions active chip area Abstand Linsenscheitel Distance chip front lens Schaltzeiten, Switching times, from from Capacitance Forward voltage Sperrstrom, Reverse current Total radiant flux Temperaturkoeffizient bzw. Temperature coefficient Temperaturkoeffizient Temperature coefficient Temperaturkoeffizient Temperature coefficient Symbol Symbol peak Wert Value Einheit Unit
0.25
Grad deg.
1.30 1.5) 1.90 2.5) 0.01
0.55
mV/K nm/K
Semiconductor Group
1997-11-01
271,
Gruppierung Achsrichtung gemessen einem Raumwinkel 0.01 Grouping radiant intensity axial direction solid angle 0.01 Bezeichnung Description Symbol Symbol Wert Value Radiant intensity Einheit Unit
typ.
mW/sr mW/sr
Relative spectral emission Irel
OHRD1938
Radiant intensity
(IF)
OHR01038
Single pulse,
Max. permissible forward current (TA)
OHO00364
(100
1000
1060
Semiconductor Group
1997-11-01
271,
Forward current (VF), single pulse,
OHR01041
Permissible pulse handling capability duty cycle parameter
OHR00257
0.005 0.01 0.02
typ.
max.
0.05
Radiation characteristics Irel
OHR01879
Semiconductor Group
1997-11-01

271, Area flat 2.54 spacing Cathode Approx. weight

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