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BFG135 7GHz wideband transistor
Product specification File under discrete semiconductors, SC14 1995
Philips Semiconductors
Product specification
7GHz wideband transistor
DESCRIPTION silicon planar epitaxial transistor plastic SOT223 envelope, intended wideband amplifier applications. small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities distortion level. distribution active areas across surface device gives excellent temperature profile. PINNING base emitter collector DESCRIPTION emitter
handbook, halfpage
BFG135
view
MSB002
Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ptot PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation current gain transition frequency maximum unilateral power gain (note GHz; Tamb MHz; Tamb MHz; Tamb output voltage open base CONDITIONS open emitter MIN. TYP. MAX. UNIT
Tamb f(p+q-r) 793.25
LIMITING VALUES accordance with Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO Ptot Tstg Note temperature soldering point collector tab. 1995 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature (note open emitter open base open collector CONDITIONS MIN. MAX. UNIT
Philips Semiconductors
Product specification
7GHz wideband transistor
THERMAL CHARACTERISTICS SYMBOL Note temperature soldering point collector tab. CHARACTERISTICS unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain CONDITIONS GHz; Tamb MHz; Tamb MHz; Tamb output voltage second order intermodulation distortion note note dBmV; Tamb f(p+q) MHz; MHz; dBmV; Tamb f(p+q) MHz; MHz; Notes (DIN 45004B); Tamb 445.25 MHz; 453.25 MHz; 455.25 MHz; measured f(p+q-r) 443.25 MHz. (DIN 45004B); Tamb 795.25 MHz; 803.25 MHz; 805.25 MHz; measured f(p+q-r) 793.25 MHz. MIN. TYP. PARAMETER thermal resistance from junction soldering point CONDITIONS (note
BFG135
THERMAL RESISTANCE
MAX.
UNIT
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
handbook, full pagewidth
input
MBB284
output
Fig.2 Intermodulation distortion second order intermodulation distortion test circuit.
List components (see test circuit) DESIGNATION (note (note (note (note Note Components mounted underside PCB. circuit constructed double copper-clad printed circuit board with PTFE dielectric 2.2); thickness inch; thickness copper sheet inch. DESCRIPTION multilayer ceramic capacitor multilayer ceramic capacitor miniature ceramic plate capacitor microstripline microstripline turns copper wire microstripline Ferroxcube choke copper wire metal film resistor metal film resistor metal film resistor length 2322 73103 2322 73201 2322 73279 VALUE UNIT length width length 22mm; width int. dia. winding pitch length width 3122 20153 DIMENSIONS CATALOGUE 2222 08627 2222 12108 2222 08103
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
handbook, full pagewidth
input
output
MBB299
handbook, full pagewidth
MBB298
handbook, full pagewidth
MBB297
Fig.3 Intermodulation distortion test printed-circuit board.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
MBB300
MBB294
handbook, halfpage
handbook, halfpage
(mA)
Fig.5 Fig.4 Power derating curve.
current gain function collector current.
MBB295
handbook, halfpage
handbook, halfpage
MBB296
(pF)
(GHz)
(mA)
MHz;
GHz; Tamb
Fig.6
Feedback capacitance function collector-base voltage.
Fig.7
Transition frequency function collector current.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
MBB292
MBB293
handbook, halfpage
(dB)
handbook, halfpage
(dB)
(mA)
(mA)
Tamb f(p+q-r) 443.25 MHz.
Tamb f(p+q-r) 793.25 MHz.
Fig.8
Intermodulation distortion function collector current.
Fig.9
Intermodulation distortion function collector current.
MBB291
MBB290
handbook, halfpage
(dB)
handbook, halfpage
(dB)
(mA)
(mA)
dBmV; Tamb f(p+q) MHz.
dBmV; Tamb f(p+q) MHz.
Fig.10 Second order intermodulation distortion function collector current.
Fig.11 Second order intermodulation distortion function collector current.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
handbook, halfpage
MEA951
handbook, halfpage
MEA952
0.25 0.50 0.75 POUT POUT
MHz.
MHz.
Fig.12 Load impedance function output power.
Fig.13 Load impedance function output power.
handbook, halfpage
MEA953
MEA948
handbook, halfpage
POUT
0.25 0.50 0.75
12.5 MHz.
MHz.
Fig.14 Load impedance function output power.
Fig.15 Input impedance function output power.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
MEA949
MEA950
handbook, halfpage
handbook, halfpage
POUT
POUT
MHz.
12.5 MHz.
Fig.16 Input impedance function output power.
Fig.17 Input impedance function output power.
MEA947
MEA945
handbook, halfpage
handbook, halfpage
12.5
12.5
POUT
(mW)
MHz.
MHz.
Fig.18 Efficiency function output power.
Fig.19 Output power function input power.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
MEA946
MBB289
handbook, halfpage
handbook, halfpage
(dB)
12.5 (dB)
POUT
(MHz)
Tamb MHz.
Fig.20 Power gain function output power.
Fig.21 Maximum unilateral power gain function frequency.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
handbook, full pagewidth
Tamb
MBB288
Fig.22 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
Tamb
MBB286
Fig.23 Common emitter forward transmission coefficient (S21). 1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
handbook, full pagewidth
Tamb
MBB285
Fig.24 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
Tamb
MBB287
Fig.25 Common emitter output reflection coefficient (S22). 1995
Philips Semiconductors worldwide company
Argentina: South America Australia: Waterloo Road, NORTH RYDE, 2113, Tel. 9805 4455, Fax. 9805 4466 Austria: Computerstr. A-1101 WIEN, P.O. 213, Tel. 101, Fax. 1210 Belarus: Hotel Minsk Business Center, Bld. 1211, Volodarski Str. 220050 MINSK, Tel. +375 733, Fax. +375 Belgium: Netherlands Brazil: South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, James Bourchier Blvd., 1407 SOFIA, Tel. +359 211, Fax. +359 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. 7381, Fax. 8556 China/Hong Kong: Hong Kong Industrial Technology Centre, Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: South America Czech Republic: Austria Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. 2636, Fax. 1949 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. +358 800, Fax. +358 80920 France: Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. 6161, Fax. 6427 Germany: D-20097 HAMBURG, Tel. Fax. Greece: 25th March Street, 17778 TAVROS, Tel. 4894 339/911, Fax. 4814 Hungary: Austria India: Philips INDIA Ltd, Shivsagar Estate, Block, Annie Besant Worli, MUMBAI 018, Tel. 4938 541, Fax. 4938 Indonesia: Singapore Ireland: Newstead, Clonskeagh, DUBLIN Tel. +353 7640 000, Fax. +353 7640 Israel: RAPAC Electronics, Kehilat Saloniki AVIV 61180, Tel. +972 0444, Fax. +972 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza Novembre 20124 MILANO, Tel. 6752 2531, Fax. 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. 3740 5130, Fax. 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. 1412, Fax. 1415 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. 5214, Fax. 4880 Mexico: 5900 Gateway East, Suite 200, PASO, TEXAS 79905, Tel. 7381, Fax. 8556 Middle East: Italy Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. 83749, Fax. 88399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. 4160, Fax. 7811 Norway: Manglerud 0612, OSLO, Tel. 8000, Fax. 8341 Philippines: Philips Semiconductors Philippines Inc., Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. 6380, Fax. 3474 Poland: Lukiska 04-123 WARSZAWA, Tel. 2831, Fax. 2327 Portugal: Spain Romania: Italy Russia: Philips Russia, Usatcheva 35A, 119048 MOSCOW, Tel. 5361, Fax. 8323 Singapore: Lorong Payoh, SINGAPORE 1231, Tel. 2538, Fax. 6500 Slovakia: Austria Slovenia: Italy South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. 5911, Fax. 5494 South America: Rocio 220, floor, Suite 04552-903 Paulo, PAULO Brazil, Tel. 2333, Fax. 1849 Spain: Balmes 08007 BARCELONA, Tel. 6312, Fax. 4107 Sweden: Kottbygatan Akalla, S-16485 STOCKHOLM, Tel. 2000, Fax. 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. 2686, Fax. 7730 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, Chung Hsiao West Road, Sec. P.O. 22978, TAIPEI 100, Tel. +886 4443, Fax. +886 4444 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. 4090, Fax. 0793 Turkey: Talatpasa Cad. 80640 Tel. 2770, Fax. 6707 Ukraine: PHILIPS UKRAINE, Akademika Koroleva str., Office 165, 252148 KIEV, Tel. +380 0297/1642, Fax. +380 6991 United Kingdom: Philips Semiconductors Ltd., Bath Road, Hayes, MIDDLESEX 5BX, Tel. 5000, Fax. 8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. 7381, Fax. 8556 Uruguay: South America Vietnam: Singapore Yugoslavia: PHILIPS, Pasica 5/v, 11000 BEOGRAD, Tel. +381 344, Fax.+381
other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1996
Internet: CGY2020G_1.mif June 1996 11:51 SCA50
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights. Printed Netherlands
647021/1200/01/pp12 Date release: 1996 Document order number: 9397 00971

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