HEXFET® Power MOSFET IRLML6302 VDSS -20V Generation Tec

The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers.

HEXFET® Power MOSFET IRLML6302 VDSS -20V Generation Tec

Datasheet Thumbnail

Top Searches for this datasheet

91259F
HEXFET® Power MOSFET
IRLML6302
VDSS -20V
Generation Technology Ultra On-Resistance P-Channel MOSFET SOT-23 Footprint Profile (<1.1mm) Available Tape Reel Fast Switching
RDS(on) 0.60
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. customized leadframe been incorporated into standard SOT-23 package produce HEXFET Power MOSFET with industry's smallest footprint. This package, dubbed Micro3, ideal applications where printed circuit board space premium. profile (<1.1mm) Micro3 allows easily into extremely thin application environments such portable electronics PCMCIA cards.
Micro3
Absolute Maximum Ratings
Parameter
25°C 70°C 25°C dv/dt TSTG Continuous Drain Current, -4.5V Continuous Drain Current, -4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction Storage Temperature Range
Max.
-0.78 -0.62 -4.9 -5.0
Units
mW/°C
V/ns
Thermal Resistance
Maximum Junction-to-Ambient
Parameter
Typ.
Max.
Units
°C/W
03/09/05
IRLML6302
Electrical Characteristics 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(ON) VGS(th) IDSS td(on) td(off) Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -0.70 0.56 Typ. -4.9 0.56 Max. Units Conditions -250µA mV/°C Reference 25°C, -1mA 0.60 -4.5V, -0.61A 0.90 -2.7V, -0.31A -1.5 VGS, -250µA -10V, -0.31A -1.0 -16V, -16V, 125°C -100 -12V -0.61A 0.84 -16V -4.5V, Fig. -10V -0.61A Fig. -15V 1.0MHz, Fig.
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units -0.54 -4.9 -1.2
Conditions MOSFET symbol showing integral reverse junction diode. 25°C, -0.61A, 25°C, -0.61A di/dt 100A/µs
Notes:
Repetitive rating; pulse width limited
max. junction temperature. fig.
Pulse width 300µs; duty cycle Surface mounted FR-4 board, 5sec.
-0.61A, di/dt 76A/µs, V(BR)DSS,
150°C
IRLML6302
7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V
Drain-to-Source Current
Drain-to-Source Current
7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V
-1.5V 20µs PULSE WIDTH 150°C
0.01
-1.5V
20µs PULSE WIDTH 25°C
0.01
-VDS Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Drain-to-Source Current
25°C 150°C
DS(on) Drain-to-Source Resistance (Normalized)
-0.61A
0.01
-10V 20µs PULSE WIDTH
-4.5V
-VGS Gate-to-Source Voltage
Junction Temperature (°C)
Typical Transfer Characteristics
Normalized On-Resistance Temperature
IRLML6302
Gate-to-Source Voltage
Ciss
1MHz SHORTED
-0.61A -16V
Capacitance (pF)
Coss
Crss
TEST CIRCUIT FIGURE
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
-ISD Reverse Drain Current
OPERATION THIS AREA LIMITED DS(on)
Drain Current
100µs
150°C 25°C
10ms
0.01
25°C 150°C Single Pulse
-VSD Source-to-Drain Voltage
-VDS Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
IRLML6302
-4.5V
-4.5V
Charge
Pulse Width Duty Factor
Basic Gate Charge Waveform
Current Regulator Same Type D.U.T.
10a. Switching Time Test Circuit
.2µF .3µF
-3mA
Current Sampling Resistors
Gate Charge Test Circuit
1000
Thermal Response thJA
0.50 0.20 0.10
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.0001 0.001 0.01
0.00001
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D.U.T.
td(on) d(off)
10b. Switching Time Waveforms
Rectangular Pulse Duration (sec)
D.U.T.
IRLML6302
Peak Diode Recovery dv/dt Test Circuit
D.U.T
Circuit Layout Considerations Stray Inductance Ground Plane Leakage Inductance Current Transformer
VGS*
dv/dt controlled controlled Duty Factor D.U.T. Device Under Test
Reverse Polarity P-Channel P-Channel Driver P-Channel Measurements
Driver Gate Drive P.W. Period P.W. Period
[VGS=10V
D.U.T. Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple
[ISD]
5.0V Logic Level Drive Devices P-Channel HEXFETS
IRLML6302
Micro3 (SOT-23) Package Outline
Dimensions shown millimeters (inches)
9DH@ITDPIT HDGGDH@U@ST DI8C@T
IPU@T
b"'d !&#!
b"&$d
b&$d
Micro3 (SOT-23/TO-236AB) Part Marking Information
`@6S XPSF X@@F
8P9@
XPSF X@@F
`@6S
IRLML6302
Micro3Tape Reel Information
Dimensions shown millimeters (inches)
2.05 .080 1.95 .077 .161 .154
.062 .060
1.85 .072 1.65 .065
1.32 .051 1.12 .045
3.55 .139 3.45 .136
.326 .312
FEED DIRECTION
.161 .154
.043 .036
0.35 .013 0.25 .010
178.00 7.008 MAX.
9.90 .390 8.40 .331 NOTES: CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
Data specifications subject change without notice.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information. 03/05

HEXFET® Power MOSFET IRLML6302 VDSS -20V Generation Tec

Top Searches for this datasheet

Other recent searches