RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Part Number
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91397D
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Part Number Radiation Level IRHNA7260 100K Rads (Si) IRHNA3260 300K Rads (Si) IRHNA4260 IRHNA8260 500K Rads (Si) 1000K Rads (Si) RDS(on) 0.07 0.07 0.07 0.07
IRHNA7260 JANSR2N7433U 200V, N-CHANNEL
REF: MIL-PRF-19500/664 RAD-Hard HEXFET TECHNOLOGY
Part Number JANSR2N7433U JANSF2N7433U JANSG2N7433U JANSH2N7433U
International Rectifier's RAD-Hard HEXFET technology provides high performance power MOSFETs space applications. This technology over decade proven performance reliability satellite applications. These devices have been characterized both Total Dose Single Event Effects (SEE). combination Rdson gate charge reduces power losses switching applications such converters motor control. These devices retain well established advantages MOSFETs such voltage control, fast switching, ease paralleling temperature stability electrical parameters.
Features:
Single Event Effect (SEE) Hardened RDS(on) Total Gate Charge Simple Drive Requirements Ease Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
12V, 25°C 12V, 100°C 25°C dv/dt Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight footnotes refer last page (for (Typical)
Pre-Irradiation
Units
W/°C
V/ns
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03/02/07
IRHNA7260, JANSR2N7433U
Pre-Irradiation
Electrical Characteristics 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage Temperature Coefficient Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage Forward Transconductance IDSS Zero Gate Voltage Drain Current
Units
0.26 0.070 0.077 -100 V/°C
Test Conditions
1.0mA Reference 25°C, 1.0mA 12V, 12V, VGS, 1.0mA 15V, VDS= 160V,VGS=0V 160V 125°C -20V 12V, 100V 100V, 43A, 12V, 2.35
IGSS IGSS td(on) td(off)
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
Measured from center drain center source 1.0MHz
Ciss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
5300 1200
Source-Drain Diode Ratings Characteristics
Parameter
Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Units
Test Conditions
25°C, 43A, 25°C, 43A, di/dt 100A/µs
Intrinsic turn-on time negligible. Turn-on speed substantially controlled
Thermal Resistance
Parameter
RthJC RthJPCB Junction-to-Case Junction-to-PC Board
0.42
Units
°C/W
Test Conditions
Solder copper clad Board
Note: Corresponding Spice Saber models available International Rectifier Website. footnotes refer last page
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Radiation Characteristics Pre-Irradiation
IRHNA7260, JANSR2N7433U
International Rectifier Radiation Hardened MOSFETs tested verify their radiation hardness capability. hardness assurance program International Rectifier comprised radiation environments. Every manufacturing tested total ionizing dose (per notes using TO-3 package. Both pre- post-irradiation performance tested specified using same drive circuitry test conditions order provide direct comparison.
Table Electrical Characteristics 25°C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Diode Forward Voltage
100K Rads(Si)1 300K-1000KRads(Si)2
Units
Test Conditions
1.0mA VDS, 1.0mA 160V, 12V, =27A
-100 0.075
1.25
-100 0.16
Part number IRHNA7260 (JANSR2N7433U) Part numbers IRHNA3260 (JANSF2N7433U), IRHNA4260 (JANSG2N7433U) IRHNA8260 (JANSH2N7433U)
International Rectifier radiation hardened MOSFETs have been characterized heavy environment Single Event Effects (SEE). Single Event Effects characterization illustrated Fig. Table
(MeV/(mg/cm2)) 36.8 Energy (MeV) Range VDS(V) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Single Event Effect, Safe Operating Area
footnotes refer last page
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IRHNA7260, JANSR2N7433U
Pre-Irradiation
1000
Drain-to-Source Current
Drain-to-Source Current
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
1000
9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
5.0V
20µs PULSE WIDTH
5.0V
20µs PULSE WIDTH
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
1000
RDS(on) Drain-to-Source Resistance (Normalized)
Drain-to-Source Current
20µs PULSE WIDTH
Gate-to-Source Voltage
Junction Temperature
Typical Transfer Characteristics
Normalized On-Resistance Temperature
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Pre-Irradiation
IRHNA7260, JANSR2N7433U
10000
8000
Gate-to-Source Voltage
1MHz Ciss SHORTED Crss Coss
160V 100V
Capacitance (pF)
Ciss
6000
4000
Coss
2000
Crss
TEST CIRCUIT FIGURE
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
1000
1000
Reverse Drain Current
OPERATION THIS AREA LIMITED RDS(on)
Drain Current
10us
100us
10ms
Single Pulse
,Source-to-Drain Voltage
1000
Drain-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
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IRHNA7260, JANSR2N7433U
Pre-Irradiation
D.U.T.
Drain Current
Pulse Width Duty Factor
10a. Switching Time Test Circuit
Case Temperature
td(on) d(off)
Maximum Drain Current Case Temperature
10b. Switching Time Waveforms
Thermal Response thJC
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJC 0.0001 0.001 0.01
0.01
0.001 0.00001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHNA7260, JANSR2N7433U
Single Pulse Avalanche Energy (mJ)
1200
BOTTOM
1000
DRIVER
D.U.T
0.01
12a. Unclamped Inductive Test Circuit
V(BR)DSS
Starting Junction Temperature
12c. Maximum Avalanche Energy Drain Current
12b. Unclamped Inductive Waveforms
Current Regulator Same Type D.U.T.
.2µF .3µF
D.U.T.
Charge
Current Sampling Resistors
13a. Basic Gate Charge Waveform
13b. Gate Charge Test Circuit
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IRHNA7260, JANSR2N7433U
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited
maximum junction temperature. Peak 43A,
Pulse width Duty Cycle Total Dose Irradiation with Bias.
50V, starting 25°C, 0.54mH 43A, di/dt 410A/µs,
200V, 150°C
volt applied during irradiation MIL-STD-750, method 1019, condition Total Dose Irradiation with Bias. volt applied during irradiation MlL-STD-750, method 1019, condition
Case Outline Dimensions SMD-2
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