IRF9952 Generation Technology Ultra On-Resistance Dual Channel MO

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IRF9952 Generation Technology Ultra On-Resistance Dual Channel MO

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91561B
IRF9952
Generation Technology Ultra On-Resistance Dual Channel MOSFET Surface Mount Very Gate Charge Switching Losses Fully Avalanche Rated
HEXFET® Power MOSFET
N-CHANNEL MOSFET
N-Ch P-Ch VDSS -30V
P-CHANNEL MOSFET
View
RDS(on) 0.10 0.25
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques achieve extremely on-resistance silicon area. This benefit, combined with fast switching speed ruggedized device design that HEXFET Power MOSFETs well known for, provides designer with extremely efficient reliable device wide variety applications. SO-8 been modified through customized leadframe enhanced thermal characteristics multiple-die capability making ideal variety power applications. With these improvements, multiple devices used application with dramatically reduced board space. package designed vapor phase, infra red, wave soldering techniques.
Recommended upgrade: IRF7309 IRF7319 Lower profile/smaller equivalent: IRF7509
SO-8
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 25°C 70°C dv/dt TSTG
N-Channel
Maximum P-Channel
-2.3 -1.8 -1.3
Units
Pulsed Drain Current Continuous Source Current (Diode Conduction) 25°C Maximum Power Dissipation 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction Storage Temperature Range
-1.3
0.25
-5.0
Thermal Resistance Ratings
Maximum Junction-to-Ambient
Parameter
Symbol
Limit
62.5
Units
°C/W 06/02/05
IRF9952
Electrical Characteristics 25°C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. -1.0 Typ. Max. 0.015 0.015 0.08 0.10 0.12 0.15 0.165 0.250 0.290 0.400 -2.0 ±100 Units V/°C Conditions 250µA -250µA Reference 25°C, Reference 25°C, -1mA 10V, 2.2A 4.5V, 1.0A -10V, -1.0A -4.5V, -0.50A VGS, 250µA VGS, -250µA 15V, 3.5A -15V, -2.3A 24V, -24V, 24V, 125°C -24V, 125°C ±20V N-Channel 1.8A, 10V, P-Channel -2.3A, -10V, -10V N-Channel 10V, 1.0A, 6.0, P-Channel -10V, -1.0A, 6.0, N-Channel 15V, 1.0MHz P-Channel -15V, 1.0MHz
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) VGS(th) IDSS IGSS td(on) td(off) Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Ratings Characteristics
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -1.3 0.82 25°C, 1.25A, -0.82 -1.2 25°C, -1.25A, N-Channel 25°C, =1.25A, di/dt 100A/µs P-Channel 25°C, -1.25A, di/dt 100A/µs
Repetitive rating; pulse width limited
Notes:
Pulse width 300µs; duty cycle max. junction temperature. fig. Surface mounted FR-4 board, 10sec. N-Channel 2.0A, di/dt 100A/µs, V(BR)DSS, 150°C P-Channel -1.3A, di/dt 84A/µs, V(BR)DSS, 150°C N-Channel Starting 25°C, 22mH 2.0A. (See Figure P-Channel Starting 25°C, 67mH -1.3A.
N-Channel
IRF9952
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
Drain-to-Source Current
Drain-to-Source Current
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
3.0V 20µs PULSE WIDTH 25°C
3.0V 20µs PULSE WIDTH 150°C
Drain-to-Source Voltage
Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Drain-to-Source Current
Reverse Drain Current
25°C 150°C
150°C 25°C
20µs PULSE WIDTH
Gate-to-Source Voltage
Source-to-Drain Voltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
IRF9952
N-Channel
0.12
RDS(on) Drain-to-Source Resistance (Normalized)
(on) Drain-to-Source Resistance
2.2A
0.10
4.5V
0.08
0.06
0.04
Junction Temperature(
Drain Current
Normalized On-Resistance Temperature
Typical On-Resistance Drain Current
(on) Drain-to-Source Resistance
Single Pulse Avalanche Energy (mJ)
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00
BOTTOM
0.89A 1.6A 2.0A
3.5A
Gate-to-Source Voltage
Starting Junction Temperature (°C)
Typical On-Resistance Gate Voltage
Maximum Avalanche Energy Drain Current
N-Channel
IRF9952
1.8A
Gate-to-Source Voltage
1MHz SHORTED
Capacitance (pF)
Ciss Coss
Crss
Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.01
0.00001
0.0001
0.001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF9952
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
P-Channel
Drain-to-Source Current
Drain-to-Source Current
7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V
-3.0V
-3.0V
20µs PULSE WIDTH 25°C
20µs PULSE WIDTH 150°C
-VDS Drain-to-Source Voltage
-VDS Drain-to-Source Voltage
Typical Output Characteristics
Typical Output Characteristics
Drain-to-Source Current
-ISD Reverse Drain Current
25°C 150°C
150°C 25°C
-10V 20µs PULSE WIDTH
-VGS Gate-to-Source Voltage
-VSD Source-to-Drain Voltage
Typical Transfer Characteristics
Typical Source-Drain Diode Forward Voltage
P-Channel
RDS(on) Drain-to-Source Resistance
IRF9952
RDS(on) Drain-to-Source Resistance (Normalized)
-1.0A
-4.5V
-10V
-10V
Junction Temperature(
Drain Current
Normalized On-Resistance Temperature
Typical On-Resistance Drain Current
RDS(on) Drain-to-Source Resistance
0.80
Single Pulse Avalanche Energy (mJ)
-0.58A -1.0A BOTTOM -1.3A
0.60
0.40
-2.3A
0.20
0.00
Gate-to-Source Voltage
Starting Junction Temperature(
Typical On-Resistance Gate Voltage
Maximum Avalanche Energy Drain Current
IRF9952
P-Channel
-VGS Gate-to-Source Voltage
1MHz SHORTED
-2.3A =-10V
Capacitance (pF)
Ciss
Coss
Crss
-VDS Drain-to-Source Voltage
Total Gate Charge (nC)
Typical Capacitance Drain-to-Source Voltage
Typical Gate Charge Gate-to-Source Voltage
Thermal Response thJA
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: Duty factor Peak thJA 0.01
0.00001
0.0001
0.001
Rectangular Pulse Duration (sec)
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF9952
SO-8 Package Details
INCHES .0532 .013 .0075 .189 .1497 .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS 1.35 0.10 0.33 0.19 4.80 3.80 1.75 0.25 0.51 0.25 5.00 4.00 .0040
0.25 [.010]
.050 .025 .2284 .0099 .016 .2440 .0196 .050
1.27 0.635 5.80 0.25 0.40 6.20 0.50 1.27
0.10 [.004]
0.25 [.010]
DIMENSIONING OLERANCING Y14.5M-1994. CONTROLLING DIMENS ION: MILLIMETER DIMENSIONS HOWN MILLIMETERS [INCHES]. OUTLINE CONFORMS JEDEC OUTLINE MS-012AA. DIMENSION DOES INCLUDE MOLD PROTRUS IONS. MOLD PROTRUS IONS EXCEED 0.15 [.006]. DIMENSION DOES INCLUDE MOLD PROTRUS IONS. MOLD PROTRUS IONS EXCEED 0.25 [.010]. DIMENSION LENGTH LEAD OLDERING SUBST RATE. 1.27 [.050] 6.46 [.255]
FOOTPRINT 0.72 [.028]
1.78 [.070]
SO-8 Part Marking
EXAMPLE: IRF7101 (MOS CODE (YWW) IGNAT LEAD-FREE PRODUCT (OPTIONAL) DIGIT YEAR WEEK EMBLY CODE CODE PART NUMBER
ERNAT IONAL RECT IFIER LOGO
XXXX F7101
IRF9952
SO-8 Tape Reel Information
Dimensions shown millimeters (inches)
TERMINAL NUMBER
12.3 .484 11.7 .461
.318 .312
FEED DIRECTION
NOTES: CONTROLLING DIMENSION MILLIMETER. DIMENSIONS SHOWN MILLIMETERS(INCHES). OUTLINE CONFORMS EIA-481 EIA-541.
330.00 (12.992) MAX.
14.40 .566 12.40 .488 NOTES CONTROLLING DIMENSION MILLIMETER. OUTLINE CONFORMS EIA-481 EIA-541.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 252-7105 Fax: (310) 252-7903 Visit www.irf.com sales contact information.06/05

IRF9952 Generation Technology Ultra On-Resistance Dual Channel MO

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