VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70 25/70 IGBT, max. case operating temperature min. IEC-EN 60721-3-3 25/70 25/70 sin.; 1200 1200 +150 (125) 2500 40/125/56 2200
SKiM® IGBT Modules SKiM
Preliminary Data
Inverse Diode
Characteristics
V(BR)CES VGE(th) ICES IGES VCEsat VCE, VCES
VCES
min.
typ.
1,35 (2,1) (1,6) 1,67
max. Units
°C/W °C/W °C/W °C/W
Features channel, homogeneous planar IGBT Silicon structure with buffer layer (soft punch through) technology inductance case Fast soft inverse diodes Isolated (Direct Copper Bonded) ceramic plate Pressure contact technology thermal contacts Spring contact system attach driver control terminals Integrated temperature sensor Typical Applications Switched mode power supplies Three phase inverters motor speed control Switching (not linear use)
Cies Coes Cres resistance, terminal-chip; td(on) td(off) Eoff IRRM Rthjh RthjhD R'thjc R'thjcD ind. load RGon RGoff
Inverse Diode (125) (125) °C2) (125) °C2) IGBT diode IGBT diode
0,135 0,185 0,031 0,046
Thermal Characteristics unless otherwise specified VGEoff Measured chip level mounting instructions Corresponding value. This value cannot measured. only given comparison. Controlled Axial Lifetime Technology
Temperature Sensor tolerance
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SKiM 350GD128DM.xls
Eoff
SKiM 350GD128DM.xls
Eoff
Turn-on /-off energy (IC)
Fig. Turn-on /-off energy (RG)
1000
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tp=16µs 100µs
pulse
SKiM 350GD128DM.xls
RGoff 1000
10ms
1000 10000 ICpuls/IC 1000 1200 1400
Fig. Maximum safe operating area (SOA) (VCE)
SKiM 350GD128DM.xls
Fig. Turn-off safe operating area (RBSOA)
SKiM 350GD128DM.xls
allowed numbers short circuits: <1000 time between short circuits: ICSC/IC
1000 1200 1400
Fig. Safe operating area short circuit (VCE)
Fig. Rated current temperature (THS)
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Typ. output characteristic,
Fig. Typ. output characteristic,
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Fig. 6DWXUDWLRQ .KDUD.WHULVWL. ,*%7 &DO.XODWLRQ HOHPHQWV HTXDWLRQV
QGate 1000 1500 2000 800V
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Fig. WUDQVIHU .KDUD.WHULVWL.
ICpuls
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Cies
Coes Cres
VCE10
Fig. Typ. gate charge characteristic
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Fig. Typ. capacitances
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1000
SKiM 350GD128DM.xls
tdoff
tdon
RGon RGoff ind. load
10000
SKiM 350GD128DM.xls
tdoff 1000
ind. load
tdon
Fig. Typ. switch times
Fig. Typ. switch times gate resistor
Tj=125°C, typ. Tj=25°C, typ.
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Fig. Typ. diode forward characteristic
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'LRGH WXUQRII HQHUJ\ GLVVLSDWLRQ SXOVH
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0,01 D=0,50 0,20 0,10 0,05 0,02 0,01 0,01
0,001
D=0,5 0,05 0,02 0,01 single pulse
0,0001 ZthJHS
0,001 ZthJHS
single pulse
0,00001 0,00001 0,0001
0,001
0,01
0,0001 0,00001 0,0001
0,001
0,01
7UDQVLHQW WKHUPDO LPSHGDQ.H ,*%7 =WK-+6
7UDQVLHQW WKHUPDO LPSHGDQ.H LQYHUVH GLRGHV =WK-+6
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Dimensions Case outline circuit diagram
Mechanical Data
Symbol Conditions min.
heatsink, Units heatsink, Units terminals, Units terminals, Units (M5) (M6)
Values typ.
Units max.
5x9,81 lb.in. lb.in. m/s2
This electrostatic discharge sensitive device (ESDS). Please observe international standard 747-1, Chapter
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VCES VCGR VGES Ptot (Tstg) Tcop Visol humidity climate -ICM IFSM 25/70

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