FDS6681Z Volt P-Channel PowerTrench® MOSFET General Descript
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FDS6681Z
FDS6681Z
Volt P-Channel PowerTrench® MOSFET
General Description
This P-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process that been especially tailored minimize on-state resistance. This device well suited Power Management load switching applications common Notebook Computers Portable Battery Packs.
Features
RDS(ON) RDS(ON) -4.5 Extended VGSS range (-25V) battery applications protection level typical (note High performance trench technology extremely RDS(ON) High power current handling capability Termination Lead-free RoHS Compliant
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS
TA=25oC unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Single Operation
(Note (Note (Note (Note
Ratings
-105 +150
Units
TSTG
Operating Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
Package Marking Ordering Information
Device Marking FDS6681Z Device FDS6681Z Reel Size 13'' Tape width 12mm Quantity 2500 units
©2005 Fairchild Semiconductor Corporation
FDS6681Z
FDS6681Z
Electrical Characteristics
Symbol Characteristics
BVDSS BVDSS IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note
25°C unless otherwise noted
Parameter
Test Conditions
-250
Units
-250 Referenced 25°C VGS, -250 -250 Referenced 25°C -4.5 A,TJ=125°C
mV/°C
Characteristics
VGS(th) VGS(th) RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance
-1.8
mV/°C
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note
7540 1400 1120
Switching Characteristics
td(on) td(off) Qg(TOT) Qg(TOT) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
RGEN
1060
Total Gate Charge -10V Total Gate Charge Gate-Source Charge Gate-Drain Charge
FDS6681Z
FDS6681Z
Electrical Characteristics
Symbol
25°C unless otherwise noted
Parameter
Test Conditions
Units
-2.1
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward -2.1 Voltage Reverse Recovery Time Reverse Recovery Charge dIF/dt A/µs
(Note
-0.7
-1.2
(Note
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
50°C/W sec) 62.5°C/W steady state when mounted copper
105°C/W when mounted copper
125°C/W when mounted minimum pad.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% diode connected between gate source serves only protection against ESD. gate overvoltage rating implied.
FDS6681Z
FDS6681Z
Typical Characteristics
-10V -ID, DRAIN CURRENT -6.0V -3.5V -3.0V -VDS, DRAIN-SOURCE VOLTAGE -4.5V -4.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-3.5V
-ID, DRAIN CURRENT
-4.0V -4.5V -5.0V -6.0V -8.0V -10V
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
0.012 RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
-20A -10V
-10A 0.01
0.008 125oC 0.006
0.004 0.002
JUNCTION TEMPERATURE
-VGS, GATE SOURCE VOLTAGE
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Gate-to-Source Voltage.
1000 -IS, REVERSE DRAIN CURRENT
-ID, DRAIN CURRENT 1.25 1.75 -VGS, GATE SOURCE VOLTAGE 2.25
125oC
125oC
-55oC
-55oC
0.01
0.001 -VSD, BODY DIODE FORWARD VOLTAGE
Figure Transfer Characteristics.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
FDS6681Z
FDS6681Z
Typical Characteristics
-VGS, GATE-SOURCE VOLTAGE
-20A
10000
1MHz
CAPACITANCE (pF)
8000
Ciss
-10V -20V
6000
-15V
4000
Coss
2000
Crss
GATE CHARGE (nC)
-VDS, DRAIN SOURCE VOLTAGE
Figure Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER
Figure Capacitance Characteristics.
-ID, DRAIN CURRENT
RDS(ON) LIMIT 100us 10ms 100ms -10V SINGLE PULSE 125oC/W
SINGLE PULSE 125°C/W 25°C
0.01 0.01
-VDS, DRAIN-SOURCE VOLTAGE
0.001
0.01
TIME (sec)
1000
Figure Maximum Safe Operating Area.
Figure Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
RJA(t) r(t) °C/W
0.05 0.02
P(pk
0.01
0.01
RJA(t) Duty Cycle,
SINGLE PULSE
0.001 0.0001
0.001
0.01
TIME (sec)
1000
Figure Transient Thermal Response Curve.
Thermal characterization performed using conditions described Note Transient thermal response will change depending circuit board design.
FDS6681Z
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFAST® Quiet SeriesAcross board. Around world.The Power Franchise® Programmable Active DroopDISCLAIMER
PowerSaverPowerTrench® QFET® QSQT OptoelectronicsQuiet SWITCHER® SMART SuperSOTTM-6
SuperSOTTM-8 SyncFETTinyLogic® UniFETVCXWire
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: critical component component life Life support devices systems devices support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Rev.
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