SILICON POWER TRANSISTOR PACKAGE STYLE TO-217 DESCRIPTION: 2
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2N6093
SILICON POWER TRANSISTOR
PACKAGE STYLE TO-217 DESCRIPTION:
2N6093 High Gain Linear Power Amplifier Used Class Class Applications With Individual Ballast Emitter Resistor Built Temperature Sensing Diode.
MAXIMUM RATINGS
PDISS TSTG
83.3 +200 +200 1.50
Thread
Emitter Diode Cathode Collector Base Diode Anode
NONE
CHARACTERISTICS
SYMBOL
BVCEO BVCES ICES BVEBO
TEST CONDITIONS
75.0 37.5
MINIMUM
TYPICAL
MAXIMUM
UNITS
1.88 3.75
75.0
7525 ETHEL AVENUE NORTH HOLLYWOOD, 91605 (818) 982-1202 (818) 765-3004
Specifications subject change without notice.
REV.
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