AP1000C-11 Passivated Epitaxial Silicon Diode Housed Hermetically Seal
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AP1000C-11
AP1000C-11 Passivated Epitaxial Silicon Diode Housed Hermetically Sealed Glass Package. This Device Designed Cover Wide Range Control Applications Such Switching, Phase Shifting, Modulation, Duplexing Limiting Pulse Forming.
PACKAGE STYLE
MAXIMUM RATINGS
PDISS TSTG
+175 +175
CHARACTERISTICS
SYMBOL
I-REGION
NONE
TEST CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
0.15
UNITS
0.10
Ohms
7525 ETHEL AVENUE NORTH HOLLYWOOD, 91605 (818) 982-1202 (818) 765-3004
Specifications subject change without notice.
REV.
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