MICROWAVE DISCRETE POWER TRANSISTORS Silicon NPN, To-39 packaged
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SS3802
MICROWAVE DISCRETE POWER TRANSISTORS
Silicon NPN, To-39 packaged VHF/UHF Transistor Specified MHz, 28Vdc Characteristics Output Power Watt Minimum Gain Efficiency Current-Gain Bandwidth Product
Emitter Base Collector
TO-39
DESCRIPTION:
Silicon transistor, designed equipment. Applications include amplifier; pre-driver, driver, output stages. Also suitable oscillator frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C)
Symbol VCEO VCBO VEBO Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value Unit
Thermal Data
Total Device Dissipation Derate above 28.6 Watts
MSC1327.PDF 10-25-99
SS3802
ELECTRICAL SPECIFICATIONS (Tcase 25°C)
STATIC (off)
Symbol BVCER BVCEO BVCBO BVEBO ICEO ICEX Test Conditions Min. Collector-Emitter Breakdown Voltage mAdc, ohms) Collector-Emitter Sustaining Voltage (IC=5.0 mAdc, IB=0) Collector-Base Breakdown Voltage mAdc) Emitter-Base Breakdown Voltage mAdc, Collector Cutoff Current (VCE Vdc, Collector Cutoff Current (VCE Vdc, Vdc) Value Typ. Max. Unit
(on)
Current Gain mAdc, Vdc) Both mAdc, Vdc) 2N3866 mAdc, Vdc) 2N3866A Collector-Emitter Saturation Voltage mAdc, mAdc)
VCE(sat)
DYNAMIC
Symbol Test Conditions Min. Current-Gain Bandwidth Product mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) 2N3866 2N3866A Value Typ. Max. Unit
MSC1327.PDF 10-25-99
SS3802
FUNCTIONAL
Symbol Power Gain Test Conditions Min. Test Circuit-Figure 28Vdc MHz, Test Circuit-Figure 28Vdc MHz, Test Circuit-Figure 28Vdc MHz, Value Typ. Max. Unit
Pout
Output Power
Watts
Collector Efficiency
8-60
POUT (RL=50 OHMS)
S=50 OHMS)
8-60
0.9-7
3-35
OHMS 1000
-28V
Figure AMPLIFIER CIRCUIT GPE, POUT, EFFICIENCY SPECIFICATIONS.
TURNS wire, 1/8" long Capacitor values unless otherwise indicated.
TURNS wire, 3/16" long Tuning capacitors variable
MSC1327.PDF 10-25-99
SS3802
MSC1327.PDF 10-25-99
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