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Advance Information SwitchmodePower Rectifier
using Schottky Barrier principle with proprietary barrier metal. These state-of-the-art devices have following features: Features: Dual Diode Construction Paralleled Higher Current Output Guardring Stress Protection Forward Voltage Drop 125°C Operating Junction Temperature Maximum Size Short Heat Sink Manufactured Sheared!
MBRB3030CTL
SCHOTTKY BARRIER RECTIFIER AMPERES VOLTS
CASE 418B-02 D2PAK Plastic
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage Blocking Voltage Average Rectified Forward Current Rated 115°C) Peak Repetitive Forward Current Rated Square Wave, kHz, 115°C) Non-Repetitive Peak Surge Current (Surge Applied Rated Load Conditions, Halfwave, Single Phase, Peak Repetitive Reverse Surge Current (1.0 kHz) Storage Temperature Range Operating Junction Temperature Range Voltage Rate Change (Rated 25°C) Reverse Energy, Unclamped Inductive Surge 25°C, Device IFRM IFSM IRRM Tstg dv/dt 10,000 224.5 V/ms Symbol VRRM VRWM Value Unit
THERMAL CHARACTERISTICS
Thermal Resistance Junction-to-Case Thermal Resistance Junction-to-Ambient Rtjc Rtja 0.44 0.51 °C/W °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage 25°C) 25°C) Maximum Instantaneous Reverse Current (Rated 25°C) (Rated 125°C) Mounted using minimum recommended size FR-4 board. Pulse Test: Pulse Width Duty Cycle 2.0%. device data "Per Leg" except where noted.
This document contains information product. Specifications information herein subject change without notice.
Switchmode trademark Motorola, Inc.
©RectifierInc. 1997 Data Motorola, Device
MBRB3030CTL
INSTANTANEOUS FORWARD CURRENT (AMPS) INSTANTANEOUS FORWARD CURRENT (AMPS) 1000 1000
125°C 75°C 25°C
125°C 75°C 25°C
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure Typical Forward Voltage
Figure Maximum Forward Voltage
1.0E+0 MAXIMUM REVERSE CURRENT (AMPS) REVERSE CURRENT (AMPS)
1.0E+0 125°C 1.0E-1 75°C
1.0E-1
125°C
1.0E-2 75°C 1.0E-3 25°C 1.0E-4 1.0E-5 REVERSE VOLTAGE (VOLTS)
1.0E-2
1.0E-3 25°C 1.0E-4 1.0E-5 REVERSE VOLTAGE (VOLTS)
Figure Typical Reverse Current
Figure Maximum Reverse Current
SQUARE WAVE Ipk/Io Ipk/Io Ipk/Io FREQ CASE TEMPERATURE (°C) Ipk/Io
AVERAGE POWER DISSIPATION (WATTS)
AVERAGE FORWARD CURRENT (AMPS)
AVERAGE FORWARD CURRENT (AMPS) 125°C Ipk/Io Ipk/Io Ipk/Io Ipk/Io SQUARE WAVE
Figure Current Derating
Figure Forward Power Dissipation
Rectifier Device Data
MBRB3030CTL
10,000 IPK, PEAK SURGE CURRENT (AMPS) 25°C CAPACITANCE (pF) 25°C
1000
REVERSE VOLTAGE (VOLTS)
0.00001 0.0001 TIME (seconds) 0.001 0.01
Figure Typical Capacitance
Figure Typical Unclamped Inductive Surge
1.0E+00 TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0E-01 Rtjc(t) Rtjc*r(t)
1.0E-02 0.00001 0.0001 0.001 0.01 TIME (seconds)
Figure Typical Thermal Response
Rectifier Device Data
Modeling Reverse Energy Characteristics Power Rectifiers
Prepared David Shumate Larry Walker Motorola Semiconductor Products Sector
MBRB3030CTL
ABSTRACT
Power semiconductor rectifiers used variety applications where reverse energy requirements often vary dramatically based operating conditions application circuit. characterization method devised using Unclamped Inductive Surge (UIS) test technique. testing only different operating conditions (i.e. different inductor sizes) safe operating range established device. relationship between peak avalanche current inductor discharge time established. Using this relationship circuit parameters, part applicability determined. This technique offers power supply designer total operating conditions device opposed present single-data-point approach.
INTRODUCTION
today's modern power supplies, converters other switching circuitry, large voltage spikes parasitic inductance propagate throughout circuit, resulting catastrophic device failures. Concurrent with this, effort provide low-loss power rectifiers, i.e. devices with lower forward voltage drops, schottky technology being applied
devices used this switching power circuitry. This technology lends itself lower reverse breakdown voltages. This combination high voltage spikes reverse breakdown voltage devices lead reverse energy destruction power rectifiers their applications. This phenomena, however, limited just schottky technology. order meet challenges these situations, power semiconductor manufacturers attempt characterize their devices with respect reverse energy robustness. typical reverse energy specification, provided all, usually given energy-to-failure (mJ) with particular inductor specified test circuit. Sometimes, peak reverse test current also specified. Practically reverse energy characterizations performed using test circuit shown Figure Typical voltage current waveforms shown Figure order provide designer with more extensive characterization than above mentioned one-point approach, more comprehensive method characterizing these devices developed. designer given information determine appropriateness safe operating area (SOA) selected device.
HIGH SPEED SWITCH
CHARGE INDUCTOR
DRAIN CURRENT FREE-WHEELING DIODE DRAIN VOLTAGE GATE VOLTAGE INDUCTOR CHARGE SWITCH
Figure Simplified Test Circuit
Rectifier Device Data
Suggested Method Characterization
INDUCTOR CURRENT
REVERSE VOLTAGE
TIME
Figure Typical Voltage Current Waveforms Utilizing test circuit Figure devices tested failure using inductors ranging value from 0.01 reverse voltage current waveforms acquired determine exact energy seen device inductive current decay time. least distinct inductors devices inductor used generate characteristic current versus time relationship. This relationship when coupled with application circuit conditions, defines device uniquely this application. Example Application device used this example MBR3035CT, which side) forward current, reverse breakdown voltage rectifier. parts were tested destruction 25°C. inductors used characterization were 3.0, data recorded from testing were peak reverse current (Ip), peak reverse breakdown voltage (BVR), maximum withstand energy, inductance inductor discharge time (see Table plot Peak Reverse Current versus Time device destruction, shown Figure generated. area under curve region lower reverse energy lower stress device. This area known safe operating area SOA.
SAFE OPERATING AREA 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 TIME CHARACTERIZATION CURVE
Figure Peak Reverse Current versus Time
Rectifier Device Data
Table Test Data
PART 46.6 41.7 46.0 42.7 44.9 44.1 26.5 26.4 24.4 27.6 27.7 17.9 18.9 18.8 19.0 74.2 77.3 75.2 77.3 73.8 75.6 74.7 78.4 70.5 78.3 65.2 63.4 66.0 64.8 64.8 64.1 63.1 62.8 62.2 62.9 63.2 62.6 62.1 60.7 62.6 69.1 69.6 68.9 69.6 69.1 69.2 68.6 70.3 66.6 69.4 ENERGY (mJ) 998.3 870.2 (mH) TIME (ms) 1038.9 904.2 997.3 865.0 1022.6 1024.9 872.0 1261 1262 1178 1091.0 1102.4 1316 1314 2851 3038 3092 3037 1428.6 1547.4 1521.1 1566.2 768.4 815.4 791.7 842.6 752.4 823.2 747.5 834.0 678.4 817.3
MBRB3030CTL
procedure determine rectifier appropriate, from reverse energy standpoint, used application circuit follows: Obtain "Peak Reverse Current versus Time" curve from data book. Determine steady state operating voltage (OV) circuit. Determine parasitic inductance circuit section interest. Obtain rated breakdown voltage (BVR) rectifier from data book. From following relationships, i(t) (BVR
"designer" versus curve plotted alongside device characteristic plot. point where curves intersect current level where devices will start fail. peak inductor current below this intersection should chosen safe operating. example, values were chosen
MBRB3030CTL
Figure illustrates example. Note characterization curve, parasitic inductor current curve safe operating region indicated.
SAFE OPERATING AREA 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004 TIME CHARACTERIZATION CURVE Ipeak TIME RELATIONSHIP CIRCUIT PARASITICS
SUMMARY
Traditionally, power rectifier users have been supplied with single-data-point reverse-energy characteristics supplier's device data sheet; however, been shown here previous work, reverse withstand energy vary significantly depending application. What done this work create characterization scheme which designer overlay their particular requirements onto part capability determine quite accurately chosen device applicable. This characterization technique very robust statistical approach, with proper guardbanding (6s) used give worst-case device performance entire product line. "typical" characteristic curve probably most applicable designers allowing them design their margins.
References
Borras, Aliosi, Shumate, 1993, "Avalanche Capability Today's Power Semiconductors, "Proceedings, European Power Electronic Conference," 1993, Brighton, England Pshaenich, 1985, "Characterizing Overvoltage Transient Suppressors," Powerconversion International, June/July
Figure Peak Reverse Circuit Parasitic Inductance Current versus Time
Rectifier Device Data
MBRB3030CTL
PACKAGE DIMENSIONS
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. INCHES 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 MILLIMETERS 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40
SEATING PLANE
0.13 (0.005)
CASE 418B-02 ISSUE
STYLE
BASE COLLECTOR EMITTER COLLECTOR
STYLE
GATE DRAIN SOURCE DRAIN
STYLE
ANODE CATHODE ANODE CATHODE
Rectifier Device Data
MBRB3030CTL
Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters which provided Motorola data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer. Mfax trademark Motorola, Inc. reach EUROPE Locations Listed: Motorola Literature Distribution; P.O. 5405, Denver, Colorado 80217. 303-675-2140 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
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MBRB3030CTL/D Rectifier Device Data
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