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Order this document MBT3904DW1T1/D Dual General Purpose Transisto


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Order this document MBT3904DW1T1/D
Dual General Purpose Transistors
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 devices spin-offs popular SOT-23/SOT-323 three-leaded devices. They designed general purpose amplifier applications housed SOT-363 six-leaded surface mount package. putting discrete devices package, these devices ideal low-power surface mount applications where board space premium. hFE, 100-300 VCE(sat), Simplifies Circuit Design Reduces Board Space Reduces Component Count Available 7-inch/3,000 Unit Tape Reel
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
CASE 419B-01, STYLE
MBT3904DW1T1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Symbol VCEO VCBO VEBO -200 Value -5.0 Unit
MBT3906DW1T1
Collector Current Continuous MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP)
mAdc
THERMAL CHARACTERISTICS
Characteristic Total Package Dissipation(1) 25°C Thermal Resistance Junction Ambient Junction Storage Temperature Symbol RqJA Tstg +150 Unit MBT3946DW1T1* °C/W
Device mounted glass epoxy printed circuit board using minimum recommended footprint.
DEVICE MARKING
MBT3904DW1T1 MBT3946DW1T1 MBT3906DW1T1 Thermal Clad trademark Bergquist Company.
same MBT3906DW1T1 same MBT3904DW1T1
Motorola, Small-Signal Transistors, FETs Diodes Device Data Motorola Inc. 1997
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Characteristic Symbol Unit
CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) mAdc, -1.0 mAdc, Collector Base Breakdown Voltage mAdc, mAdc, Emitter Base Breakdown Voltage mAdc, mAdc, Base Cutoff Current (VCE Vdc, Vdc) (VCE Vdc, -3.0 Vdc) Collector Cutoff Current (VCE Vdc, Vdc) (VCE Vdc, -3.0 Vdc) V(BR)CEO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)CBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)EBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) ICEX MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) nAdc -5.0 nAdc
CHARACTERISTICS
Current Gain mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) mAdc, Vdc) -0.1 mAdc, -1.0 Vdc) -1.0 mAdc, -1.0 Vdc) mAdc, -1.0 Vdc) mAdc, -1.0 Vdc) -100 mAdc, -1.0 Vdc) Collector Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc) mAdc, -1.0 mAdc) mAdc, -5.0 mAdc) Base Emitter Saturation Voltage mAdc, mAdc) mAdc, mAdc) mAdc, -1.0 mAdc) mAdc, -5.0 mAdc) MBT3904DW1T1 (NPN) VCE(sat) MBT3904DW1T1 (NPN) VBE(sat) MBT3904DW1T1 (NPN) 0.65 -0.65 0.85 0.95 -0.85 -0.95 -0.25 -0.4
MBT3906DW1T1 (PNP)
MBT3906DW1T1 (PNP)
MBT3906DW1T1 (PNP)
SMALL- SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product mAdc, Vdc, MHz) mAdc, Vdc, MHz) Output Capacitance (VCB Vdc, MHz) (VCB -5.0 Vdc, MHz) Input Capacitance (VEB Vdc, MHz) (VEB -0.5 Vdc, MHz) Pulse Test: Pulse Width Duty Cycle 2.0%. MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Cobo MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Cibo MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) 10.0
Motorola Small-Signal Transistors, FETs Diodes Device Data
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted) (Continued)
Characteristic Input Impedance (VCE Vdc, mAdc, kHz) (VCE Vdc, -1.0 mAdc, kHz) Voltage Feedback Ratio (VCE Vdc, mAdc, kHz) (VCE Vdc, -1.0 mAdc, kHz) Small Signal Current Gain (VCE Vdc, mAdc, kHz) (VCE Vdc, -1.0 mAdc, kHz) Output Admittance (VCE Vdc, mAdc, kHz) (VCE Vdc, -1.0 mAdc, kHz) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Symbol Unit
mmhos
Noise Figure (VCE Vdc, mAdc, kHz) MBT3904DW1T1 (NPN) (VCE -5.0 Vdc, -100 mAdc, kHz) MBT3906DW1T1 (PNP)
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC Vdc, Vdc) (VCC -3.0 Vdc, Vdc) mAdc, mAdc) mAdc, -1.0 mAdc) (VCC Vdc, mAdc) (VCC -3.0 Vdc, mAdc) (IB1 mAdc) (IB1 -1.0 mAdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP)
Motorola Small-Signal Transistors, FETs Diodes Device Data
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 (NPN)
DUTY CYCLE
+10.9
DUTY CYCLE
+10.9
1N916
Total shunt capacitance test connectors
Figure Delay Rise Time Equivalent Test Circuit
Figure Storage Fall Time Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
25°C 125°C CAPACITANCE (pF) Cibo Cobo MBT3904DW1T1 (NPN) 5000 3000 2000 CHARGE (pC) 1000 IC/IB MBT3904DW1T1 (NPN)
REVERSE BIAS VOLTAGE (VOLTS)
COLLECTOR CURRENT (mA)
Figure Capacitance
Figure Charge Data
Motorola Small-Signal Transistors, FETs Diodes Device Data
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 (NPN)
MBT3904DW1T1 (NPN) COLLECTOR CURRENT (mA) MBT3904DW1T1 (NPN) IC/IB RISE TIME (ns) IC/IB
TIME (ns)
COLLECTOR CURRENT (mA)
Figure Turn Time
STORAGE TIME (ns) MBT3904DW1T1 (NPN) IC/IB IC/IB IC/IB IC/IB
Figure Rise Time
FALL TIME (ns)
IC/IB
IC/IB
MBT3904DW1T1 (NPN)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Storage Time
Figure Fall Time
TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE Vdc, 25°C, Bandwidth
NOISE FIGURE (dB) SOURCE RESISTANCE SOURCE RESISTANCE SOURCE RESISTANCE SOURCE RESISTANCE NOISE FIGURE (dB) MBT3904DW1T1 (NPN)
MBT3904DW1T1 (NPN)
FREQUENCY (kHz)
SOURCE RESISTANCE OHMS)
Figure Noise Figure Motorola Small-Signal Transistors, FETs Diodes Device Data
Figure Noise Figure
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 (NPN) PARAMETERS
(VCE Vdc, kHz, 25°C)
MBT3904DW1T1 (NPN) CURRENT GAIN hoe, OUTPUT ADMITTANCE mhos) MBT3904DW1T1 (NPN)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Current Gain
INPUT IMPEDANCE OHMS) MBT3904DW1T1 (NPN) VOLTAGE FEEDBACK RATIO
Figure Output Admittance
MBT3904DW1T1 (NPN)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Input Impedance
Figure Voltage Feedback Ratio
Motorola Small-Signal Transistors, FETs Diodes Device Data
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3904DW1T1 (NPN) TYPICAL STATIC CHARACTERISTICS
CURRENT GAIN (NORMALIZED) +125°C 55°C +25°C MBT3904DW1T1 (NPN)
COLLECTOR CURRENT (mA)
Figure Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) MBT3904DW1T1 (NPN) 25°C
0.01
0.02
0.03
0.05
0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS) =1.0 VCE(sat) IC/IB MBT3904DW1T1 (NPN) VBE(sat) IC/IB COEFFICIENT (mV/
MBT3904DW1T1 (NPN) +25°C +125°C
VCE(sat)
55°C +25°C +25°C +125°C 55°C +25°C
VBE(sat)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "ON" Voltages
Figure Temperature Coefficients
Motorola Small-Signal Transistors, FETs Diodes Device Data
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3906DW1T1 (PNP)
+9.1 +0.5 10.6 DUTY CYCLE DUTY CYCLE 10.9 1N916
Total shunt capacitance test connectors
Figure Delay Rise Time Equivalent Test Circuit
Figure Storage Fall Time Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
25°C 125°C CAPACITANCE (pF) Cobo Cibo MBT3906DW1T1 (PNP) 5000 3000 2000 CHARGE (pC) 1000 IC/IB MBT3906DW1T1 (PNP)
REVERSE BIAS (VOLTS)
COLLECTOR CURRENT (mA)
Figure Capacitance
MBT3906DW1T1 (PNP) IC/IB FALL TIME (ns)
Figure Charge Data
MBT3906DW1T1 (PNP) IC/IB
TIME (ns)
COLLECTOR CURRENT (mA)
IC/IB
COLLECTOR CURRENT (mA)
Figure Turn Time
Figure Fall Time
Motorola Small-Signal Transistors, FETs Diodes Device Data
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3906DW1T1 (PNP) TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE Vdc, 25°C, Bandwidth
SOURCE RESISTANCE NOISE FIGURE (dB) SOURCE RESISTANCE SOURCE RESISTANCE MBT3906DW1T1 (PNP) MBT3906DW1T1 (PNP) SOURCE RESISTANCE OHMS)
NOISE FIGURE (dB)
SOURCE RESISTANCE
FREQUENCY (kHz)
Figure
Figure
PARAMETERS
(VCE Vdc, kHz, 25°C)
hoe, OUTPUT ADMITTANCE mhos) MBT3906DW1T1 (PNP) CURRENT GAIN MBT3906DW1T1 (PNP)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Current Gain
VOLTAGE FEEDBACK RATIO INPUT IMPEDANCE OHMS) MBT3906DW1T1 (PNP)
Figure Output Admittance
MBT3906DW1T1 (PNP)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure Input Impedance Motorola Small-Signal Transistors, FETs Diodes Device Data
Figure Voltage Feedback Ratio
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
MBT3906DW1T1 (PNP) TYPICAL STATIC CHARACTERISTICS
CURRENT GAIN (NORMALIZED) +125°C MBT3906DW1T1 (PNP) 55°C +25°C
COLLECTOR CURRENT (mA)
Figure Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) MBT3906DW1T1 (PNP) 25°C
0.01
0.02
0.03
0.05
0.07
BASE CURRENT (mA)
Figure Collector Saturation Region
TEMPERATURE COEFFICIENTS (mV/
25°C VOLTAGE (VOLTS) VBE(sat) IC/IB 55°C +25°C MBT3906DW1T1 (PNP) +25°C +125°C
VCE(sat)
+25°C +125°C
MBT3906DW1T1 (PNP) VCE(sat) IC/IB
55°C +25°C
VBE(sat)
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (mA)
Figure "ON" Voltages
Figure Temperature Coefficients
Motorola Small-Signal Transistors, FETs Diodes Device Data
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
INFORMATION USING SOT-363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT SURFACE MOUNTED APPLICATIONS
Surface mount board layout critical portion total design. footprint semiconductor packages must correct size insure proper solder connection interface between board package. With correct geometry, packages will self align when subjected solder reflow process.
SOT-363
(min)
SOT-363 POWER DISSIPATION
power dissipation SOT-363 function size. This vary from minimum size soldering size given maximum power dissipation. Power dissipation surface mount device determined TJ(max), maximum rated junction temperature die, RJA, thermal resistance from device junction ambient, operating temperature, Using values provided data sheet SOT-363 package, calculated follows: TJ(max)
values equation found maximum ratings table data sheet. Substituting these values into equation ambient temperature 25°C, calculate power dissipation device which this case milliwatts. 150°C 25°C 833°C/W milliwatts
833°C/W SOT-363 package assumes recommended footprint glass epoxy printed circuit board achieve power dissipation milliwatts. There other alternatives achieving higher power dissipation from SOT-363 package. Another alternative would ceramic substrate aluminum core board such Thermal CladTM. Using board material such Thermal Clad, aluminum core board, power dissipation doubled using same footprint.
melting temperature solder higher than rated temperature device. When entire device heated high temperature, failure complete soldering within short time could result device failure. Therefore, following items should always observed order minimize thermal stress which devices subjected. Always preheat device. delta temperature between preheat soldering should 100°C less.* When preheating soldering, temperature leads case must exceed maximum temperature ratings shown data sheet. When using infrared heating with reflow soldering method, difference shall maximum 10°C. soldering temperature time shall exceed 260°C more than seconds. When shifting from preheating soldering, maximum temperature gradient shall less. After soldering been completed, device should allowed cool naturally least three minutes. Gradual cooling should used forced cooling will increase temperature gradient result latent failure mechanical stress. Mechanical stress shock should applied during cooling. Soldering device without preheating cause excessive thermal shock stress which result damage device.
Motorola Small-Signal Transistors, FETs Diodes Device Data
(min)
SOLDERING PRECAUTIONS
0.65 0.65
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
PACKAGE DIMENSIONS
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH.
(0.008)
INCHES 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 0.004 0.004 0.010 0.004 0.012 0.008 0.079 0.087 0.012 0.016
MILLIMETERS 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 0.10 0.10 0.25 0.10 0.30 0.20 2.00 2.20 0.30 0.40
STYLE
EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR
CASE 419B-01 ISSUE
Motorola reserves right make changes without further notice products herein. Motorola makes warranty, representation guarantee regarding suitability products particular purpose, does Motorola assume liability arising application product circuit, specifically disclaims liability, including without limitation consequential incidental damages. "Typical" parameters which provided Motorola data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. Motorola does convey license under patent rights rights others. Motorola products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure Motorola product could create situation where personal injury death occur. Should Buyer purchase Motorola products such unintended unauthorized application, Buyer shall indemnify hold Motorola officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that Motorola negligent regarding design manufacture part. Motorola registered trademarks Motorola, Inc. Motorola, Inc. Equal Opportunity/Affirmative Action Employer. Mfax trademark Motorola, Inc. reach EUROPE Locations Listed: Motorola Literature Distribution; P.O. 5405, Denver, Colorado 80217. 303-675-2140 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
MfaxTM: RMFAX0@email.sps.mot.com TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Ping Industrial Park, Canada ONLY 1-800-774-1848 Ting Road, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps
MBT3904DW1T1/D Motorola Small-Signal Transistors, FETs Diodes Device Data

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