SamHop Microelectronics Corp. Feb.01 2005 ver1.3 N-Channel Logic
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STU/D3055L2
SamHop Microelectronics Corp. Feb.01 2005 ver1.3
N-Channel Logic Level Enhancement Mode Field Effect Transistor
VDSS
FEATURES
(mW)
RDS(ON)
Super high dense cell design RDS(ON).
4.5V
Rugged reliable. TO-252 TO-251 Package.
SERIES TO-252AA(D-PAK)
SERIES TO-251(l-PAK)
ABSOLUTE MAXIMUM RATINGS (TC=25 unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed @TC=25 Symbol TSTG Limit Unit
Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 Operating Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
U/D3055L2
ICAL CHAR ACTE TICS unless otherwise noted)
Parameter CHAR ACTE TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage (th) (ON) ID(ON) CRSS
ymbol
Condition
250uA 16V, 12V, 250uA =10V, =6.0A =4.5V, 5.2A 4.5V 10V, 6.0A
Unit
m-ohm m-ohm
CHAR ACTE TICS
Gate Threshold Voltage Drain-S ource On-S tate esistance On-S tate Drain Current Forward Transconductance
DYNAMIC CHAR ACTE TICS
Input Capacitance Output Capacitance everse Transfer Capacitance =8V, =1.0MH
WITCHING CHAR ACTE TICS
Turn-On Delay Time Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tD(OFF)
10V, 4.5V, =10V,ID =6A,V =10V =10V,ID =6A,V =4.5V =10V, =10V
14.3 11.9 22.1 16.7 18.9
U/D3055L2
ICAL CHAR ACTE TICS A=25 unless otherwise noted)
Parameter
Diode Forward Voltage
ymbol
Condition
=10A
Unit
AIN-S DIODE CHAR ACTE TICS
Notes urface Mounted Board, 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle c.Guaranteed design, subject production testing.
=10,9,8,7,6,5,4,3V
Drain urrent(A)
Drain urrent
j=125
Drain-to-S ource Voltage
ate-to-S ource Voltage
igure Output haracteris tics
1250
igure Trans haracteris tics
=10V
apacitance
RDS(ON), On-Resistance (Normalized)
1000
Drain-to ource Voltage
igure apacitance
igure On-R tance Variation with Temperature
U/D3055L2
Normalized Drain-S ource reakdown oltage Normalized ate-S ource hres hold oltage
=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 =250uA
unction emperature
unction emperature
igure hres hold ariation with emperature
igure reakdown oltage ariation with emperature
rans conductance
=10V
ource-drain current
Drain-S ource urrent
Diode orward oltage
igure rans conductance ariation with Drain urrent
Drain urrent
igure Diode orward oltage ariation with ource urrent
ource oltage
=10V
0.03
=4.5V ingle ulse c=25
otal harge
Drain-S ource oltage
igure harge
igure Maximum perating Area
U/D3055L2
toff
td(on)
td(off)
INVE
WIDTH
igure witching ircuit
igure witching Waveforms
r(t),Normalized ffective ransient hermal Impedance
D=0.5
0.05 0.02 0.01 0.01
(t)=r Datas heet Duty ycle, D=t1/t2
quare Wave Duration
igure Normalized hermal rans ient Impedance urve
U/D3055L2
6.00
0.94
2.29 9.70 1.425 0.650 0.600
1.625 0.850 REF.
0.090 0.024
0.064 REF.
U/D3055L2
TO-252 Tape Reel Data
TO-252 Carrier Tape
UNIT: PACKAGE TO-252 6.80 ±0.1 10.3 ±0.1 2.50 ±0.1
16.0 0.3±
1.75 0.1±
±0.15
±0.1
±0.1
±0.15
±0.05
TO-252 Reel
UNIT: TAPE SIZE REEL SIZE
17.0
13.0
10.6
±0.5
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