N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Effic

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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Effic

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2N7000
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
Efficient High Density Cell Design Approaching Million Cells Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current (ON) Fast Switching Speed
DISCONTINUED, DESIGN 2N7002
TO-92 4.45 4.46 12.5 0.41 3.43 2.42 1.14 4.70 4.70 0.55 3.68 2.67 1.40
Mechanical Data
Case: TO-92, Plastic Leads: Solderable MIL-STD-202, Method Connections: Diagram Marking: Type Number Weight: 0.18 gram (approx.)
BOTTOM VIEW
Dimensions
Maximum Ratings
Drain-Source Voltage
25°C unless otherwise specified Symbol VDSS VDGR VGSS Continuous Pulsed RqJA TSTG Value 1.60 +150 Units mW/°C
Characteristic Drain-Gate Voltage 1.0MW Gate-Source Voltage (pulsed) Drain Current Total Power Dissipation Derating above 25°C Maximum Terminal Temperature Soldering Purposes Thermal Resistance, Junction Ambient Operating Storage Temperature Range Notes: Pulse width 300ms, duty cycle
DS11304 Rev.
2N7000
Electrical Characteristics 25°C unless otherwise specified
Characteristics Drain-Source Breakdown Voltage Drain Cutoff Current Gate-Body Leakage Current Gate-Source Threshold Voltage Drain-Source On-Resistance Input Capacitance Output Capacitance Feedback Capacitance Turn-On Time Turn-Off Time Thermal Resistance, Junction Ambient Symbol V(BR)DSS IDSS IGSS VGS(th) rDS(ON) CISS COSS CRSS toff 312.5 Unit Test Condition 10µA 48V, ±15V, VGS, 1.0mA 10V, 0.5A
Characteristics
Characteristics (Note
Dynamic Characteristics
25V, 1.0MHz
Switching Characteristics
15V, 0.5A, 10V, RGEN 25W,
Thermal Characteristics
Notes:
Pulse width 300ms, duty cycle
DISCONTINUED, DESIGN 2N7002
DS11304 Rev.
2N7000

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Effic

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