Features Silicon Epitaxial Planar Transistors switching amplifier

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Features Silicon Epitaxial Planar Transistors switching amplifier

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BC327 BC328
Features
Silicon Epitaxial Planar Transistors switching amplifier applications. Especially suitable AF-driver stages low-power output stages. These types also available subdivided into three groups, -16, -25, -40, according their current gain. complementary types, transistors BC337 BC338 recommended.
18979
Mechanical Data
Case: TO-92 Plastic Package Weight: approx. Packaging Codes/Options: BULK container k/box Ammopack k/box
Parts Table
Part BC327-16 BC327-25 BC327-40 BC328-16 BC328-25 BC328-40 Type differentiation hFE, typ. hFE, typ. hFE, typ. hFE, typ. hFE, typ. hFE, typ. Ordering code BC327-16-BULK BC327-16-TAP BC327-25-BULK BC327-25-TAP BC327-40-BULK BC327-40-TAP BC328-16-BULK BC328-16-TAP BC328-25-BULK BC328-25-TAP BC328-40-BULK BC328-40-TAP Remarks Bulk Ammopack Bulk Ammopack Bulk Ammopack Bulk Ammopack Bulk Ammopack Bulk Ammopack
Absolute Maximum Ratings
Tamb unless otherwise specified Parameter Collector emitter voltage Test condition Part BC327 BC328 BC327 BC328 Emitter base voltage Collector current Peak collector current Base current Power dissipation
Symbol VEBO
Value 6251)
Unit
Tamb
Ptot
Valid provided that leads kept ambient temperature distance from case.
Document Number 85132 Rev. 1.4, 19-May-04
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BC327 BC328
Vishay Semiconductors Maximum Thermal Resistance
Parameter Thermal resistance junction ambient Junction temperature Storage temperature range
Test condition
Symbol
Value 2001)
Unit °C/W
Valid provided that leads kept ambient temperature distance from case.
Electrical Characteristics
Parameter current gain (current gain grup current gain (current gain grup current gain (current gain grup current gain (current gain grup current gain (current gain grup current gain (current gain grup Test condition Part BC327-16 BC327-25 BC327-40 BC328-16 BC328-25 BC328-40 BC327 BC328 BC327 BC328 Symbol ICES ICES ICES ICES VCEsat BC327 BC328 Emitter base breakdown voltage BC327 BC328 V(BR)CEO V(BR)CEO V(BR)CEO V(BR)CES V(BR)EBO Unit
Collector emitter cutoff current Tamb Tamb Collector saturation voltage Base emitter voltage Collector emitter breakdown voltage
Electrical Characteristics
Parameter Gain bandwidth product Collector base capacitance Test condition Symbol CCBO Unit
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Document Number 85132 Rev. 1.4, 19-May-04
Typical Characteristics (Tamb unless otherwise specified)
Collector-Emitter Cutoff Current Ptot Admissible Power Dissipation
BC327 BC328
10000 maximum 1000 typical
327: -VCE 328: -VCE Tamb Ambient Temperature
160180 Tamb Ambient Temperature
18878
18845
Fig. Admissible Power Dissipation Ambient Temperature
Fig. Collector-Emitter Cutoff Current Ambient Temperature
Pulse Thermal Resistance
1000 150°
0.05 0.02 0.01 0.005
Current Gain
Tamb
18885
18847
Pulse Length
Collector Current 1000
Fig. Pulse Thermal Resistance Pulse Duration
Fig. Current Gain Collector Current
1000
Collector Current
Collector Current
-50° 150° typical limits Tamb
18879
18877
-VBE Base-Emitter Voltage
-VCE Collector Emitter Voltage
Fig. Collector Current Base-Emitter Voltage
Fig. Common Emitter Collector Characteristics
Document Number 85132 Rev. 1.4, 19-May-04
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BC327 BC328
0.85
18880
-VBEsat Base Saturation Voltage
Collector Current
typical limits Tamb
150°
0.75 -VBE
-VCE Collector Emitter Voltage
18883
Collector Current
1000
Fig. Common Emitter Collector Characteristics
Fig. Base Saturation Voltage Collector Current
Collector Current
0.25 0.15
Gain-Bandwidth Product
0.35
1000
Tamb -VCE
18881
0.05
Collector Current 1000
-VCE Collector Emitter Voltage
18884
Fig. Common Emitter Collector Characteristics
Fig. Gain-Bandwidth Product Collector Current
-VCEsat Collector Saturation Voltage
typical limits Tamb
150°
18882
Collector Current
1000
Fig. Collector Saturation Voltage Collector Current
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Document Number 85132 Rev. 1.4, 19-May-04
Packaging Radial Taping
BC327 BC328
12.7
-0.5
Vers. Dim.
5.08 2.54 12.7 Measure limit over index holes:
18787
Document Number 85132 Rev. 1.4, 19-May-04
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BC327 BC328
Vishay Semiconductors Package Dimensions (Inches)
(0.181)
(0.181)
(0.142)
max. 0.55 (0.022) (0.098)
min. 12.5 (0.492)
Bottom View
18776
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Document Number 85132 Rev. 1.4, 19-May-04
Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH
BC327 BC328
Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operatingsystems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances (ODSs). Montreal Protocol (1987) London Amendments (1990) intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency (EPA) Council Decision 88/540/EEC 91/690/EEC Annex (transitional substances) respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: (0)7131 2831, number: (0)7131 2423
Document Number 85132 Rev. 1.4, 19-May-04
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