600V POWER IGBT POWER IGBT generation high voltage power IGB

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600V POWER IGBT POWER IGBT generation high voltage power IGB

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APT40GP60B2D1
600V
POWER IGBT
POWER IGBT generation high voltage power IGBTs. Using Punch Through Technology this IGBT ideal many high frequency, high voltage switching applications been optimized high frequency switchmode power supplies.
T-Max
Conduction Loss Gate Charge Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGEM SSOA TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
operation 400V, operation 400V, SSOA rated
Ratings: 25°C unless otherwise specified.
APT40GP60B2D1 UNIT
160A 600V
Watts Amps Volts
Continuous Collector Current 25°C Continuous Collector Current 110°C Pulsed Collector Current
25°C
Switching Safe Operating Area 150°C Total Power Dissipation Operating Storage Junction Temperature Range Max. Lead Temp. Soldering: 0.063" from Case Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic Test Conditions Collector-Emitter Breakdown Voltage (VGE 400µA) Gate Threshold Voltage (VCE VGE, 1mA, 25°C) UNIT
Volts
Collector-Emitter Voltage (VGE 15V, 40A, 25°C) Collector-Emitter Voltage (VGE 15V, 40A, 125°C) Collector Cut-off Current (VCE VCES, 25°C) Collector Cut-off Current (VCE VCES, 125°C) Gate-Emitter Leakage Current (VGE ±20V)
6-2002 050-7404
3000 ±100
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
EUROPE
S.W. Columbia Street Chemin Magret
Bend, Oregon 97702 -1035 F-33700 Merignac France
Phone: (541) 382-8028 Phone: (33)
FAX: (541) 388-0364 FAX: (33)
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
APT40GP60B2D1
Test Conditions Capacitance Gate Charge 300V 150°C, 15V, 100µH,VCE 600V Inductive Switching (25°C) VCC(Peak) 400V
UNIT
4470
Gate-Emitter Charge Gate-Collector ("Miller Charge Switching
td(on) td(off) Eon1 Eon2 Eoff td(on) td(off) Eon1 Eon2 Eoff
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
+25°C
Inductive Switching (125°C) VCC(Peak) 400V +125°C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
THERMAL MECHANICAL CHARACTERISTICS
Symbol Characteristic Junction Case (IGBT) Junction Case (DIODE) Package Weight UNIT °C/W
Repetitive Rating: Pulse width limited maximum junction temperature. Combi devices, Ices includes both IGBT FRED leakages MIL-STD-750 Method 3471. Eon1 clamped inductive turn-on-energy IGBT only, without effect commutating diode reverse recovery current adding IGBT turn-on loss. (See Figure 24.) Eon2 clamped inductive turn-on energy that includes commutating diode reverse recovery current IGBT turn-on switching loss. Combi device used clamping diode shown Eon2 test circuit. (See Figures 22.) Eoff clamped inductive turn-off energy. (See Figures 23.)
Reserves right change, without notice, specifications information contained herein.
050-7404
6-2002
APT's devices covered more following U.S.patents:
4,895,810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,434,095
5,262,336 5,528,058
TYPICAL PERFORMANCE CURVES
COLLECTOR CURRENT
15V. 250µs PULSE TEST <0.5 DUTY CYCLE
APT40GP60B2D1
COLLECTOR CURRENT
10V. 250µs PULSE TEST <0.5 DUTY CYCLE
TC=-55°C
TC=-55°C
VCE, COLLECTER-TO-EMITTER VOLTAGE FIGURE Output Characteristics(VGE 15V) TC=25°C TC=125°C
VCE, COLLECTER-TO-EMITTER VOLTAGE FIGURE Output Characteristics (VGE 10V) TC=125°C TC=25°C
VGE, GATE-TO-EMITTER VOLTAGE
250µs PULSE TEST <0.5 DUTY CYCLE
25°C
COLLECTOR CURRENT
125°C 25°C -55°C VGE, GATE-TO-EMITTER VOLTAGE FIGURE Transfer Characteristics
VCE=120V VCE=300V
VCE=480V
GATE CHARGE (nC) FIGURE Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
VGE, GATE-TO-EMITTER VOLTAGE FIGURE State Voltage Gate-to- Emitter Voltage
25°C. 250µs PULSE TEST <0.5 DUTY CYCLE
15V. 250µs PULSE TEST <0.5 DUTY CYCLE
IC=20A
Junction Temperature (°C) FIGURE State Voltage Junction Temperature
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
COLLECTOR CURRENT(A)
1.15 1.10 1.05 0.95 0.85
050-7404
JUNCTION TEMPERATURE (°C) FIGURE Breakdown Voltage Junction Temperature
CASE TEMPERATURE (°C) FIGURE Collector Current Case Temperature
6-2002
APT40GP60B2D1
(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
VGE=
=15V,TJ=125°C =10V,TJ=125°C
400V
=15V,TJ=25°C =10V,TJ=25°C
VGE=
400V 25°C, =125°C
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Delay Time Collector Current
125°C,VGE 125°C,VGE
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-Off Delay Time Collector Current
100µH, 400V 125°C,
RISE TIME (ns)
FALL TIME (ns)
ICE, COLLECTOR EMITTER CURRENT FIGURE Current Fall Time Collector Current 1800
25°C,
100µH, 400V ICE, COLLECTOR EMITTER CURRENT FIGURE Current Rise Time Collector Current
2500
EON1, TURN ENERGY LOSS (µJ)
EOFF, TURN ENERGY LOSS (µJ)
400V +15V
1600 1400 1200 1000
400V +15V
125°C,
2000
=125°C,10V
=125°C,
1500
25°C,
1000
25°C,
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Energy Loss Collector Current 4000
SWITCHING ENERGY LOSSES (µJ)
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn Energy Loss Collector Current 2500
SWITCHING ENERGY LOSSES (µJ)
400V +15V
25°C,
Eon2 3500 3000 2500 2000 1500 1000 Eoff Eon2 Eoff20A Eoff Eon2
Eon2
2000
1500 Eoff 1000 Eon2
6-2002
Eoff Eon2 Eoff
050-7404
GATE RESISTANCE (OHMS) FIGURE Switching Energy Losses Gate Resistance
JUNCTION TEMPERATURE (°C) FIGURE Switching Energy Losses Junction Temperature
TYPICAL PERFORMANCE CURVES
10,000 5,000 Cies
COLLECTOR CURRENT
APT40GP60B2D1
CAPACITANCE
1,000 Coes
VCE, COLLECTOR EMITTER VOLTAGE Figure Minimim Switching Safe Operating Area
Cres
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure Capacitance Collector-To-Emitter Voltage 0.25 D=0.5
ZJC, THERMAL IMPEDANCE (°C/W)
0.05
0.05
0.01 0.005 0.02 0.01 SINGLE PULSE
Note:
Duty Factor t1/t2 Peak
0.001 10-5 10-4
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure Maximum Effective Transient Thermal Impedance, Junction-To-Case Pulse Duration
FMAX, OPERATING FREQUENCY (kHz)
Fmax min(f max1
max1
125°C 75°C 400V
0.05 d(off Pdiss Pcond
Pdiss
COLLECTOR CURRENT Figure Operating Frequency Collector Current
050-7404
6-2002
APT40GP60B2D1
40GP60B2D1
Gate Voltage
Collector Voltage
td(on)
D.U.T.
Collector Current
Switching Energy
Figure Inductive Switching Test Circuit
Figure Turn-on Switching Waveforms Definitions
Gate Voltage
VTEST *DRIVER SAME TYPE D.U.T.
d(off)
Collector Voltage
Switching Energy
100uH
Collector Current
CLAMP
DRIVER* D.U.T.
Figure Turn-off Switching Waveforms Definitions
Figure EON1 Test Circuit
050-7404
6-2002
APT40GP60B2D1
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Characteristic Test Conditions Maximum Average Forward Current 90°C, Duty Cycle 0.5) Forward Current Non-Repetitive Forward Surge Current 45°C, 8.3ms)
Ratings: 25°C unless otherwise specified.
APT40GP60B2D1 UNIT
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic Test Conditions Maximum Forward Voltage 15A, 125°C 40A, 125°C UNIT
2.73 1.66 2.24
Volts
T-MAX (B2) Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) 2-Plcs.
Dimensions Millimeters (Inches)
APT's devices covered more following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058
050-7404
6-2002
Gate Collector (Cathode) Emitter (Anode)

600V POWER IGBT POWER IGBT generation high voltage power IGB

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