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APT40GP60B2D1

600V 39A

APT40GP60B2D1
600V 39A
POWER MOS 7 IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
T-MaxTM
· Low Conduction Loss · Low Gate Charge · Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM I C1 I C2 I CM SSOA PD TJ, TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient
· 100 kHz operation @ 400V, 44A · 200 kHz operation @ 400V, 29A · SSOA rated
APT40GP60B2D1 UNIT
Watts °C Amps Volts
STATIC ELECTRICAL CHARACTERISTICS
Volts
Rev - 6-2002 050-7404
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702 -1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
APT40GP60B2D1
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching SOA
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
Turn-on Switching Energy (Diode) Turn-off Switching Energy
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C / W gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
Rev - 6-2002
TYPICAL PERFORMANCE CURVES
IC, COLLECTOR CURRENT (A)
APT40GP60B2D1
IC, COLLECTOR CURRENT (A)
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
40 60 80 100 120 GATE CHARGE (nC) FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
-25 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 140
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature
Rev - 6-2002
APT40GP60B2D1
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 60 50 40 30 20
10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100 90 80
tr, RISE TIME (ns)
tf, FALL TIME (ns)
70 60 50 40 30 20 10 10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1800 0
EON1, TURN ON ENERGY LOSS (µJ)
EOFF, TURN OFF ENERGY LOSS (µJ)
0 10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 4000
SWITCHING ENERGY LOSSES (µJ)
10 20 30 40 50 60 70 80 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 2500
SWITCHING ENERGY LOSSES (µJ)
Eon2 80A 3500 3000 2500 2000 1500 1000 500 0 0 Eoff 40A Eon2 20A Eoff20A Eoff 80A Eon2 40A
Eon2 80A
1500 Eoff 80A 1000 Eon2 40A
Rev - 6-2002
Eoff 40A Eon2 20A Eoff 20A
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
10, 000 5, 000 Cies 160 140
IC, COLLECTOR CURRENT (A)
APT40GP60B2D1
C, CAPACITANCE ( F)
1, 000 500 Coes
120 100 80 60 40 20 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area 0
100 50 Cres 10
ZJC, THERMAL IMPEDANCE (°C / W)
0.01 0.005 0.02 0.01 SINGLE PULSE
Note:
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
FMAX, OPERATING FREQUENCY (kHz)
20 30 40 50 60 70 80 90 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
Rev - 6-2002
APT40GP60B2D1
APT 40GP60B2D1
Gate Voltage
Collector Voltage
td(on) tr
A D.U.T.
Collector Current
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST DRIVER SAME TYPE AS D.U.T.
t d(off)
Collector Voltage
100uH
Collector Current
V CLAMP
A DRIVER D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
Rev - 6-2002
APT40GP60B2D1
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
APT40GP60B2D1 15 UNIT
STATIC ELECTRICAL CHARACTERISTICS
Volts
T-MAX (B2) Package Outline
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Rev - 6-2002
Gate Collector (Cathode) Emitter (Anode)