SHEET SHEET STATUS SHEETS PMIC SHEET PREPARED Marcia Kelleher CHE

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SHEET SHEET STATUS SHEETS PMIC SHEET PREPARED Marcia Kelleher CHE

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REVISIONS DESCRIPTION Changes accordance with 5962-R273-97. -bjm Changes accordance with 5962-R432-97. Update boilerplate MIL-PRF-38535 requirements. Editorial changes throughout. DATE (YR-MO-DA) 97-04-04 97-08-08 03-09-22 APPROVED Monica Poelking Raymond Monnin Thomas Hess
SHEET SHEET STATUS SHEETS PMIC SHEET
PREPARED Marcia Kelleher CHECKED Monica Poelking
THIS DRAWING AVAILABLE DEPARTMENTS AGENCIES DEPARTMENT DEFENSE AMSC
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216 http://www.dscc.dla.mil
APPROVED Monica Poelking DRAWING APPROVAL DATE 95-12-28 REVISION LEVEL
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, CMOS, INVERTER, MONOLITHIC SILICON
SIZE CAGE CODE
SHEET
67268
5962-96653
DSCC FORM 2233 DISTRIBUTION STATEMENT Approved public release; distribution unlimited.
5962-E429-03
SCOPE Scope. This drawing documents product assurance class levels consisting high reliability (device classes space application (device class choice case outlines lead finishes available reflected Part Identifying Number (PIN). When available, choice Radiation Hardness Assurance (RHA) levels reflected PIN. PIN. shown following example: 5962 96653
Federal stock class designator
designator (see 1.2.1) Drawing number
Device type (see 1.2.2)
Device class designator (see 1.2.3)
Case outline (see 1.2.4)
Lead finish (see 1.2.5)
1.2.1 designator. Device classes marked devices meet MIL-PRF-38535 specified levels marked with appropriate designator. Device class marked devices meet MIL-PRF-38535, appendix specified levels marked with appropriate designator. dash indicates non-RHA device. 1.2.2 Device type(s). device type(s) identify circuit function follows: Device type Generic number 4069UB 4069UBN Circuit function Radiation hardened, CMOS, inverter Radiation hardened, CMOS, inverter with neutron irradiated die.
1.2.3 Device class designator. device class designator single letter identifying product assurance level follows: Device class Device requirements documentation Vendor self-certification requirements MIL-STD-883 compliant, non-JAN class level microcircuits accordance with MIL-PRF-38535, appendix Certification qualification MIL-PRF-38535
1.2.4 Case outline(s). case outline(s) designated MIL-STD-1835 follows: Outline letter Descriptive designator CDIP2-T14 CDFP3-F14 Terminals Package style Dual-in-line Flat pack
1.2.5 Lead finish. lead finish specified MIL-PRF-38535 device classes MIL-PRF-38535, appendix device class
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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Absolute maximum ratings. Supply voltage range (VDD). input voltage range (VIN). input current, input (IIN) Device dissipation output transistor Storage temperature range (TSTG). Lead temperature (soldering, seconds). Thermal resistance, junction-to-case (JC): Case outline Case outline Thermal resistance, junction-to-ambient (JA): Case outline Case outline Junction temperature (TJ) Maximum package power dissipation +125°C (PD): Case outline Case outline Recommended operating conditions. Supply voltage range (VDD). Case operating temperature range (TC) Input voltage range (VIN). Output voltage range (VOUT) Radiation features: Total dose Single event phenomenon (SEP) effective linear energy threshold (LET) upsets (see 4.4.4.5). Dose rate upset pulse) Dose rate latch-up. Dose rate survivability Neutron irradiated (device type 02). +3.0 -55°C +125°C +0.0 +0.0 Rads (Si) MeV/(cm2/mg) Rads (Si)/s Rads (Si)/s Rads (Si)/s neutrons/cm
-0.5 -0.5 -65°C +150°C +265°C 24°C/W 30°C/W 74°C/W 116°C/W +175°C 0.68 0.43
Stresses above absolute maximum rating cause permanent damage device. Extended operation maximum levels degrade performance affect reliability. Unless otherwise noted, voltages referenced VSS. limits parameters specified herein shall apply over full specified range case temperature range -55°C +125°C unless otherwise noted. device power exceeds package dissipation capability, provide heat sinking derate linearly (the derating based following rate: Case outline 13.5 mW/°C Case outline mW/°C Guaranteed design process tested.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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APPLICABLE DOCUMENTS Government specification, standards, handbooks. following specification, standards, handbooks form part this drawing extent specified herein. Unless otherwise specified, issues these documents those listed issue Department Defense Index Specifications Standards (DoDISS) supplement thereto, cited solicitation. SPECIFICATION DEPARTMENT DEFENSE MIL-PRF-38535 Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT DEFENSE MIL-STD-883 MIL-STD-1835 HANDBOOKS DEPARTMENT DEFENSE MIL-HDBK-103 MIL-HDBK-780 List Standard Microcircuit Drawings. Standard Microcircuit Drawings. Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines.
(Unless otherwise indicated, copies specification, standards, handbooks available from Standardization Document Order Desk, Robbins Avenue, Building Philadelphia, 19111-5094.) Order precedence. event conflict between text this drawing references cited herein, text this drawing takes precedence. Nothing this document, however, supersedes applicable laws regulations unless specific exemption been obtained. REQUIREMENTS Item requirements. individual item requirements device classes shall accordance with MIL-PRF-38535 specified herein modified device manufacturer's Quality Management (QM) plan. modification plan shall affect form, fit, function described herein. individual item requirements device class shall accordance with MIL-PRF-38535, appendix non-JAN class level devices specified herein. 3.1.1 Microcircuit die. requirements microcircuit die, appendix this document. Design, construction, physical dimensions. design, construction, physical dimensions shall specified MIL-PRF-38535 herein device classes MIL-PRF-38535, appendix herein device class 3.2.1 Case outlines. case outlines shall accordance with 1.2.4 herein. 3.2.2 Terminal connections. terminal connections shall specified figure 3.2.3 Radiation test connections. irradiation test connections shall specified table herein.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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Electrical performance characteristics postirradiation parameter limits. Unless otherwise specified herein, electrical performance characteristics postirradiation parameter limits specified table shall apply over full case operating temperature range. Electrical test requirements. electrical test requirements shall subgroups specified table IIA. electrical tests each subgroup defined table Marking. part shall marked with listed herein. addition, manufacturer's also marked listed MIL-HDBK-103. packages where marking entire number feasible space limitations, manufacturer option marking "5962-" device. product using this option, designator shall still marked. Marking device classes shall accordance with MIL-PRF-38535. Marking device class shall accordance with MIL-PRF-38535, appendix 3.5.1 Certification/compliance mark. certification mark device classes shall "QML" required MIL-PRF-38535. compliance mark device class shall required MIL-PRF-38535, appendix Certificate compliance. device classes certificate compliance shall required from QML-38535 listed manufacturer order supply requirements this drawing (see 6.6.1 herein). device class certificate compliance shall required from manufacturer order listed approved source supply MIL-HDBK-103 (see 6.6.2 herein). certificate compliance submitted DSCC-VA prior listing approved source supply this drawing shall affirm that manufacturer's product meets, device classes requirements MIL-PRF-38535 herein device class requirements MIL-PRF-38535, appendix herein. Certificate conformance. certificate conformance required device classes MIL-PRF-38535 device class MIL-PRF-38535, appendix shall provided with each microcircuits delivered this drawing. Notification change device class device class notification DSCC-VA change product (see herein) involving devices acquired this drawing required change defined MIL-PRF-38535, appendix Verification review device class device class DSCC, DSCC's agent, acquiring activity retain option review manufacturer's facility applicable required documentation. Offshore documentation shall made available onshore option reviewer. 3.10 Microcircuit group assignment device class Device class devices covered this drawing shall microcircuit group number (see MIL-PRF-38535, appendix
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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TABLE Electrical performance characteristics. Conditions -55°C +125°C unless otherwise specified level output current (sink) High level output current (source) 13.5
Test Supply current
Symbol
Device type
Group subgroups
Limits 0.25 15.0 30.0 50.0 0.53 0.36 0.64 -0.53 -0.36 -0.64 -1.8 -1.15 -2.0 -1.4 -0.9 -2.6 -3.5 -2.4 -4.2
Unit
footnotes table.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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TABLE Electrical performance characteristics Continued. Conditions -55°C +125°C unless otherwise specified load load load Output voltage, load load load Input voltage, 13.5 Input voltage, high 13.5 Input leakage current, GND, GND, GND, Input leakage current, high GND, GND, VNTH GND, input, 4.4.1c footnotes table.
Test Output voltage, high
Symbol
Device type
Group subgroups
Limits 4.95 9.95 14.95 0.05 0.05 0.05 11.0 -100 -1000 -100 1000 -0.7 -0.2 -2.8 -2.8 ±1.0 ±1.0 VDD/2 VDD/2
Unit
Negative threshold voltage Negative threshold voltage, delta Positive threshold voltage Positive threshold voltage, delta Input capacitance Functional tests
VNTH VPTH
VPTH
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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TABLE Electrical performance characteristics Continued. Conditions -55°C +125°C unless otherwise specified Transition time tTHL, tTLH
Test Propagation delay time
Symbol tPHL, tPLH
Device type
Group subgroups
Limits
Unit
These tests controlled design process directly tested. These parameters characterized initial design release upon design changes which affect these characteristics. Devices supplied this drawing meet levels irradiation. However, this device only tested level. When performing post irradiation electrical measurements level, +25°C. accuracy, voltage measured differentially VDD. Limit 0.050 max. input rise fall times (tr,
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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Device type Case outlines Terminal number
Terminal symbol
FIGURE Terminal connections.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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QUALITY ASSURANCE PROVISIONS Sampling inspection. device classes sampling inspection procedures shall accordance with MIL-PRF-38535 modified device manufacturer's Quality Management (QM) plan. modification plan shall affect form, fit, function described herein. device class sampling inspection procedures shall accordance with MIL-PRF-38535, appendix Screening. device classes screening shall accordance with MIL-PRF-38535, shall conducted devices prior qualification technology conformance inspection. device class screening shall accordance with method 5004 MIL-STD-883, shall conducted devices prior quality conformance inspection. 4.2.1 Additional criteria device class Burn-in test, method 1015 MIL-STD-883. Test condition test circuit shall maintained manufacturer under document revision level control shall made available preparing acquiring activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1015 MIL-STD-883. +125°C, minimum. Interim final electrical test parameters shall specified table herein.
4.2.2 Additional criteria device classes burn-in test duration, test condition test temperature, approved alternatives shall specified device manufacturer's plan accordance with MIL-PRF-38535. burn-in test circuit shall maintained under document revision level control device manufacturer's Technology Review Board (TRB) accordance with MIL-PRF-38535 shall made available acquiring preparing activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1015 MIL-STD-883. Interim final electrical test parameters shall specified table herein. Additional screening device class beyond requirements device class shall specified MIL-PRF-38535, appendix modified device manufacturer's Quality Management (QM) plan.
Qualification inspection device classes Qualification inspection device classes shall accordance with MIL-PRF-38535. Inspections performed shall those specified MIL-PRF-38535 herein groups inspections (see 4.4.1 through 4.4.4). Conformance inspection. Technology conformance inspection classes shall accordance with MIL-PRF-38535, including groups inspections specified herein. Quality conformance inspection device class shall accordance with MIL-PRF-38535, appendix specified herein. Inspections performed device class shall those specified method 5005 MIL-STD-883 herein groups inspections (see 4.4.1 through 4.4.4). 4.4.1 Group inspection. Tests shall specified table herein. device class subgroups tests shall sufficient verify truth table. device classes subgroups shall include verifying functionality device. Subgroup (CIN measurement) shall measured only initial qualification after process design changes which affect capacitance. shall measured between designated terminal frequency MHz. Tests shall sufficient validate limits defined table herein.
4.4.2 Group inspection. group inspection end-point electrical parameters shall specified table herein.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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TABLE IIA. Electrical test requirements. Test requirements Subgroups accordance with MIL-STD-883, method 5005, table Device class Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group test requirements (see 4.4) Group end-point electrical parameters (see 4.4) Group end-point electrical parameters (see 4.4) Group end-point electrical parameters (see 4.4) Subgroups accordance with MIL-PRF-38535, table III) Device class Device class
applies subgroups applies subgroups deltas. Delta limits, specified table IIB, shall required where specified, delta limits shall completed with reference zero hour electrical parameters (see table TABLE IIB. Burn-in operating life test, Delta parameters (+25°C). Parameters Supply current Output current (sink), Output current (source) VOUT Symbol Delta limits
TABLE III. Irradiation test connections Open Ground 10.0
Each except will have resistor irradiation testing. 4.4.2.1 Additional criteria device class Steady-state life test conditions, method 1005 MIL-STD-883: Test condition test circuit shall maintained manufacturer under document revision level control shall made available preparing acquiring activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1005 MIL-STD-883. +125°C, minimum. Test duration: 1,000 hours, except permitted method 1005 MIL-STD-883.
4.4.2.2 Additional criteria device classes steady-state life test duration, test condition test temperature, approved alternatives shall specified device manufacturer's plan accordance with MIL-PRF-38535. test circuit shall maintained under document revision level control device manufacturer's accordance with MIL-PRF-38535 shall made available acquiring preparing activity upon request. test circuit shall specify inputs, outputs, biases, power dissipation, applicable, accordance with intent specified test method 1005 MIL-STD-883.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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4.4.3 Group inspection. group inspection end-point electrical parameters shall specified table herein. 4.4.4 Group inspection. Group inspection required only parts intended marked radiation hardness assured (see herein). End-point electrical parameters shall specified table herein. device classes devices test vehicle shall subjected radiation hardness assured tests specified MIL-PRF-38535 level being tested. device class devices shall subjected radiation hardness assured tests specified MIL-PRF-38535, appendix level being tested. device classes must meet postirradiation end-point electrical parameter limits defined table +25°C ±5°C, after exposure, subgroups specified table herein. When specified purchase order contract, copy delta limits shall supplied.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall performed accordance with MIL-STD-883, method 1019, specified herein. 4.4.4.1.1 Accelerated aging testing. Accelerated aging testing shall performed devices requiring level greater than rads (Si). post-anneal end-point electrical parameter limits shall specified table herein shall pre-irradiation end-point electrical parameter limits 25°C ±5°C. Testing shall performed initial qualification after design process changes which affect response device. 4.4.4.2 Neutron irradiation. Neutron irradiation device shall conducted wafer form using neutron fluence approximately 1x10 neutrons/cm 4.4.4.3 Dose rate induced latchup testing. Dose rate induced latchup testing shall performed accordance with test method 1020 MIL-STD-883 specified herein (see herein). Tests shall performed devices, SEC, approved test structures technology qualification after design process changes that affect capability process. 4.4.4.4 Dose rate upset testing. Dose rate upset testing shall performed accordance with test method 1021 MIL-STD-883 herein (see herein). Transient dose rate upset testing shall performed initial qualification after design process changes which affect performance devices. Test devices with defects unless otherwise specified. Transient dose rate upset testing class devices shall performed specified approved radiation hardness assurance plan MIL-PRF-38535.
4.4.4.5 Single event phenomena (SEP). testing shall required class devices (see herein). testing shall performed technology process Standard Evaluation Circuit (SEC) alternate test vehicle approved qualifying activity initial qualification after design process changes which affect upset latchup characteristics. recommended test conditions follows: beam angle incidence shall between normal surface normal, inclusive (i.e. angle 60°). shadowing beam fixturing package related effects allowed. fluence shall errors ions/cm
flux shall between ions/cm cross-section shall verified flux independent measuring cross-section flux rates that differ least order magnitude. particle range shall microns silicon. test temperature shall +25°C maximum rated operating temperature ±10°C. Bias conditions shall defined manufacturer latchup measurements. Test four devices with zero failures.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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Methods inspection. Methods inspection shall specified follows: 4.5.1 Voltage current. Unless otherwise specified, voltages given referenced microcircuit terminal. Currents given conventional current positive when flowing into referenced terminal. PACKAGING Packaging requirements. requirements packaging shall accordance with MIL-PRF-38535 device classes MIL-PRF-38535, appendix device class NOTES Intended use. Microcircuits conforming this drawing intended Government microcircuit applications (original equipment), design applications, logistics purposes. 6.1.1 Replaceability. Microcircuits covered this drawing will replace same generic device covered contractorprepared specification drawing. 6.1.2 Substitutability. Device class devices will replace device class devices. Configuration control SMD's. proposed changes existing SMD's will coordinated with users record individual documents. This coordination will accomplished using Form 1692, Engineering Change Proposal. Record users. Military industrial users should inform Defense Supply Center Columbus when system application requires configuration control which SMD's applicable that system. DSCC will maintain record users this list will used coordination distribution changes drawings. Users drawings covering microelectronic devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544. Comments. Comments this drawing should directed DSCC-VA Columbus, Ohio 43216-5000, telephone (614) 692-0547. Abbreviations, symbols, definitions. abbreviations, symbols, definitions used herein defined MIL-PRF-38535 MIL-HDBK-1331. Sources supply. 6.6.1 Sources supply device classes Sources supply device classes listed QML-38535. vendors listed QML-38535 have submitted certificate compliance (see herein) DSCC-VA have agreed this drawing. 6.6.2 Approved sources supply device class Approved sources supply class listed MIL-HDBK-103. vendors listed MIL-HDBK-103 have agreed this drawing certificate compliance (see herein) been submitted accepted DSCC-VA. Additional information. When applicable, copy following additional data shall maintained available from device manufacturer: upset levels. Test conditions (SEP). Number upsets (SEP). Number transients (SEP). Occurrence latchup (SEP).
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APPENDIX APPENDIX FORMS PART 5962-96653 SCOPE A.1.1 Scope. This appendix establishes minimum requirements microcircuit supplied under Qualified Manufacturers List (QML) Program. microcircuit meeting requirements MIL-PRF-38535 manufacturers approved plan monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, devices using chip wire designs accordance with MIL-PRF-38534 specified herein. product assurance classes consisting military high reliability (device class space application (device Class reflected Part Identification Number (PIN). When available choice Radiation Hardiness Assurance (RHA) levels reflected PIN. A.1.2 PIN. shall shown following example: 5962 96653
Federal Stock class designator
designator (see A.1.2.1)
Device type (see A.1.2.2)
Device class designator (see A.1.2.3)
code
Details (see A.1.2.4)
Drawing Number A.1.2.1 designator. Device classes identified shall meet MIL-PRF-38535 specified levels. dash indicates non-RHA die. A.1.2.2 Device type(s). device type(s) shall identify circuit function follows: Device type Generic number 4069UB 4069UBN Circuit function Radiation hardened, CMOS, inverter Radiation hardened, CMOS, inverter, neutron irradiated
A.1.2.3 Device class designator. Device class Device requirements documentation Certification qualification requirements MIL-PRF-38535.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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APPENDIX APPENDIX FORMS PART 5962-96653 A.1.2.4 Details. details designation shall unique letter which designates die's physical dimensions, bonding location(s) related electrical function(s), interface materials, other assembly related information, each product variant supplied this appendix. A.1.2.4.1 physical dimensions. types A.1.2.4.2 bonding locations electrical functions. types A.1.2.4.3 Interface materials. types A.1.2.4.4 Assembly related information. types A.1.3 Absolute maximum ratings. paragraph details. A.1.4 Recommended operating conditions. paragraph details. APPLICABLE DOCUMENTS A.2.1 Government specifications, standards, bulletin, handbooks. Unless otherwise specified, following specifications, standard, handbook issue listed that issue Department Defense Index Specifications Standards specified solicitation, form part this drawing extent specified herein. SPECIFICATION DEPARTMENT DEFENSE MIL-PRF-38535 Integrated Circuits, Manufacturing, General Specification for. STANDARD DEPARTMENT DEFENSE MIL-STD-883 Test Method Standard Microcircuits. HANDBOOK DEPARTMENT DEFENSE MIL-HDBK-103 List Standard Microcircuit Drawings. (Copies specification, standard, handbook required manufacturers connection with specific acquisition functions should obtained from contracting activity directed contracting activity). Figure number Figure number Figure number Figure number
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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APPENDIX APPENDIX FORMS PART 5962-96653 A.2.2 Order precedence. event conflict between text this drawing references cited herein, text this drawing shall take precedence. REQUIREMENTS A.3.1 Item Requirements. individual item requirements device classes shall accordance with MIL-PRF-38535 specified herein modified device manufacturer's Quality Management (QM) plan. modification plan shall affect form, function described herein. A.3.2 Design, construction physical dimensions. design, construction physical dimensions shall specified MIL-PRF-38535 manufacturer's plan, device classes herein. A.3.2.1 physical dimensions. physical dimensions shall specified A.1.2.4.1 figure A-1. A.3.2.2 bonding locations electrical functions. bonding locations electrical functions shall specified A.1.2.4.2 figure A-1. A.3.2.3 Interface materials. interface materials shall specified A.1.2.4.3 figure A-1. A.3.2.4 Assembly related information. assembly related information shall specified A.1.2.4.4 figure A-1. A.3.2.5 Radiation exposure circuit. radiation exposure circuit shall defined paragraph 3.2.3 herein. A.3.3 Electrical performance characteristics post-irradiation parameter limits. Unless otherwise specified herein, electrical performance characteristics post-irradiation parameter limits specified table herein. A.3.4 Electrical test requirements. wafer probe test requirements shall include functional parametric testing sufficient make packaged capable meeting electrical performance requirements table A.3.5 Marking. minimum, each unique die, loaded single multiple stack carriers, shipment customer, shall identified with wafer number, certification mark, manufacturer's identification listed A.1.2 herein. certification mark shall "QM" required MIL-PRF-38535. A.3.6 Certification compliance. device classes certificate compliance shall required from QML-38535 listed manufacturer order supply requirements this drawing (see A.6.4 herein). certificate compliance submitted DSCC-VA prior listing approved source supply this appendix shall affirm that manufacturer's product meets, device classes requirements MIL-PRF-38535 requirements herein. A.3.7 Certificate conformance. certificate conformance required device classes MIL-PRF-38535 shall provided with each microcircuit delivered this drawing. QUALITY ASSURANCE PROVISIONS A.4.1 Sampling inspection. device classes sampling inspection procedures shall accordance with MIL-PRF-38535 modified device manufacturer's Quality Management (QM) plan. modifications plan shall affect form, function described herein.
DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000
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APPENDIX APPENDIX FORMS PART 5962-96653 A.4.2 Screening. device classes screening shall accordance with MIL-PRF-38535, defined manufacturer's plan. minimum shall consist Wafer acceptance class product using criteria defined within MIL-STD-883, test method 5007. 100% wafer probe (see paragraph A.3.4 herein). 100% internal visual inspection applicable class criteria defined MIL-STD-883, test method 2010 alternate procedures allowed MIL-STD-883, test method 5004. A.4.3 Conformance inspection. A.4.3.1 Group inspection. Group inspection required only parts intended identified radiation assured (see A.3.5 herein). levels device classes shall specified MIL-PRF-38535. point electrical testing packaged shall specified table herein. Group tests conditions specified paragraph 4.4.4 herein. CARRIER A.5.1 carrier requirements. requirements carrier shall accordance with manufacturer's plan specified purchase order acquiring activity. carrier shall provide adequate physical, mechanical electrostatic protection. NOTES A.6.1 Intended use. Microcircuit conforming this drawing intended microcircuits built accordance with MIL-PRF-38535 MIL-PRF-38534 government microcircuit applications (original equipment), design applications logistics purposes. A.6.2 Comments. Comments this appendix should directed DSCC-VA, Columbus, Ohio, 43216-5000 telephone (614)-692-0547. A.6.3 Abbreviations, symbols definitions. abbreviations, symbols, definitions used herein defined with MIL-PRF-38535 MIL-STD-1331. A.6.4 Sources Supply device classes Sources supply device classes listed QML-38535. vendors listed within QML-38535 have submitted certificate compliance (see A.3.6 herein) DSCC-VA have agreed this drawing.
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APPENDIX APPENDIX FORMS PART 5962-96653 PHYSICAL DIMENSIONS Size: Thickness: 1219 1219 microns. mils.
BONDING LOCATIONS ELECTRICAL FUNCTIONS
NOTE: numbers reflect terminal numbers when placed case outlines (see figure
FIGURE
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APPENDIX APPENDIX FORMS PART 5962-96653
INTERFACE MATERIALS Metallization: Backside Metallization: Glassivation Type: Thickness: Substrate: ASSEMBLY RELATED INFORMATION Substrate Potential: Special assembly instructions: Floating tied VDD. Bond (VDD) first. None. Single crystal silicon.
FIGURE Continued.
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STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 03-09-22 Approved sources supply 5962-96653 listed below immediate acquisition information only shall added MIL-HDBK-103 QML-38535 during next revision. MIL-HDBK-103 QML-38535 will revised include addition deletion sources. vendors listed below have agreed this drawing certificate compliance been submitted accepted DSCC-VA. This bulletin superseded next dated revision MIL-HDBK-103 QML-38535.
Standard microcircuit drawing 5962R9665301VCC 5962R9665301VXC 5962R9665301V9A 5962R9665302V9A 5962R9665302VCC 5962R9665302VXC
Vendor CAGE number 34371 34371
Vendor similar CD4069UBDMSR CD4069UBKMSR CD4069UBHSR CD4069UBHNSR CD4069UBDNSR CD4069UBKNSR
lead finish shown each representing hermetic package most readily available from manufacturer listed that part. desired lead finish listed, contact vendor determine availability. Caution. this number item acquisition. Items acquired this number satisfy performance requirements this drawing. longer available from approved source supply. Vendor CAGE number 34371 Vendor name address Intersil Corporation 2401 Palm Blvd. P.O. Melbourne, 32902-0883
information contained herein disseminated convenience only Government assumes liability whatsoever inaccuracies information bulletin.

SHEET SHEET STATUS SHEETS PMIC SHEET PREPARED Marcia Kelleher CHE

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