M3D737 BGF1901-10 GSM1900 EDGE power module Product specific

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M3D737 BGF1901-10 GSM1900 EDGE power module Product specific

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M3D737
BGF1901-10 GSM1900 EDGE power module
Product specification 2003
Philips Semiconductors
Product specification
GSM1900 EDGE power module
FEATURES Typical EDGE performance supply voltage Output power Gain 26.5 Efficiency ACPR 1.2% peak 3.6%. distortion CDMA signal Excellent 2-tone performance temperature copper flange Integrated temperature compensated bias input/output system Flat gain over frequency band. APPLICATIONS Base station power amplifiers 1930 1990 frequency range GSM, EDGE, multi carrier applications Macrocell (driver stage) Microcell (final stage). DESCRIPTION LDMOS power amplifier module base station amplifier applications 1930 1990 band. QUICK REFERENCE DATA Typical performance MODE OPERATION EDGE Note ACPR resolution bandwidth. (MHz) 1930 1990 1930 1990 (dB) 25.5 26.5
view
BGF1901-10
PINNING SOT365C Flange input output ground DESCRIPTION
MBL257
Fig.1 Simplified outline.
ACPR (dBc) -63(1)
2003
Philips Semiconductors
Product specification
GSM1900 EDGE power module
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BGF1901-10 DESCRIPTION
BGF1901-10
VERSION SOT365
plastic rectangular single-ended flat package; flange mounted; mounting holes; in-line leads
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 60134). SYMBOL Tstg supply voltage input drive power load power storage temperature operating mounting base temperature PARAMETER MIN. +100 MAX. UNIT
CHARACTERISTICS 1930 1990 MHz; unless otherwise specified. SYMBOL mode P1dB Gp(freq) Gp(pwr) VSWRin quiescent current (pin load power power gain gain flatness over frequency range gain flatness over power band band gain efficiency input VSWR second harmonic third harmonic gain compression 26.5 note PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
small signal, dBm; 1930 1990
EDGE mode average) SR200 SR400 EVMrms EVMM Notes small signal in-band gain. defined ETSI. spectral regrowth; EDGE kHz; note signal EDGE signal distortion peak EDGE signal distortion
2003
Philips Semiconductors
Product specification
GSM1900 EDGE power module
BGF1901-10
handbook, halfpage
MLE249
handbook, halfpage
MLE250
(dB)
ACPR (dBc)
(AV)
(AV)
1960 MHz.
1960 MHz.
Fig.2
EDGE power gain efficiency functions load power; typical values.
Fig.3
EDGE ACPR function load power; typical values.
handbook, halfpage
MLE251
handbook, halfpage
MLE252
EVMrms
EVMM
(AV)
(AV)
1960 MHz.
1960 MHz.
Fig.4
EDGE function average load power; typical values.
Fig.5
EDGE peak function average load power; typical values.
2003
Philips Semiconductors
Product specification
GSM1900 EDGE power module
BGF1901-10
handbook, halfpage
26.6
MLE253
handbook, halfpage
26.4 (dB)
MLE254
(dB) 26.2
25.8 25.4
25.6
24.6
25.2 (AV)
1960 MHz.
1960 MHz; 1960.2 MHz.
Fig.6
gain power efficiency functions load power; typical values.
Fig.7
tone gain power efficiency functions load power; typical values.
handbook, halfpage
MLE255
handbook, halfpage
MLE256
(dB)
(dBc)
(dB)
(AV)
1.81
1.87
1.93
1.99
2.11 2.05 (GHz)
1960 MHz; 1960.2 MHz.
Fig.8
tone intermodulation distortion function average load power; typical values.
Fig.9 s-parameters function frequency.
2003
Philips Semiconductors
Product specification
GSM1900 EDGE power module
MOUNTING RECOMMENDATIONS General LDMOS Tbase station modules manufactured with dies directly mounted onto copper flange. matching bias circuit components mounted printed-circuit board (PCB), which also soldered onto copper flange. dies encapsulated plastic cap, pins extending from module provide means electrical connection. This construction allows module withstand limited amount flexing, although bending module avoided much possible. Mechanical stress occur bottom surface module surface amplifier casing (external heatsink) mutually flat. This, therefore, should consideration when mounting module amplifier. Another cause mechanical stress arise from thermal mismatch after soldering pins. Precautions should taken during soldering, efforts made ensure good thermal contact between flange external heatsink. External heatsink (amplifier casing) module should always mounted heatsink with thermal resistance keep module temperature possible. mounting area heatsink should flat free from burrs loose particles. recommend flatness mounting area between concave convex. concave value ensure optimal thermal behaviour, while convex value intended limit mechanical stress bending. order ensure optimum thermal behaviour, thermal compound recommended when mounting module onto amplifier external heatsink. following recommended thermal compounds have thermal conductivity >0.5 W/mK: (silicone-free) from Austerlitz-Electronics Comp. Trans. from from Corning Trans-Heat from Friis-Mikkelsen. thermal pads instead thermal compound recommended pads maintain uniform flatness over period time. Mounting PREPARATION Ensure that surface finishes free from burrs, dirt grease. 2003 CAUTION
BGF1901-10
During following procedures precautions should taken protect device from electrostatic damage. PROCEDURE Apply thin, evenly spread layer thermal compound module flange bottom surface. Excessive thermal compound result increased thermal resistance possible bending flange. little thermal compound will result increase thermal resistance. Take care that there some space between PCB. Bring module into contact with external heatsink casing, ensuring that there sufficient space excess thermal compound escape. Carefully align module with heatsink casing mounting holes, secure with bolts flat washers. Initially tighten bolts "finger tight" (approximately 0.05 Nm). Using torque wrench, tighten each bolt alternating steps final torque After module secured casing, module leads soldered PCB. leads electrical connection only, should used support module time assembly process. soldering iron used temperature maximum seconds. Avoid contact between soldering iron plastic cap. Electrical connections main ground path modules flange. therefore important that flange well grounded that return paths kept short possible. incorrectly grounded flange result loss output power oscillation. input output module designed connections. Incoming inspection When incoming inspection performed, properly designed test fixture avoid excessive mechanical stress ensure optimal performance. Philips deliver dedicated test fixtures request.
Philips Semiconductors
Product specification
GSM1900 EDGE power module
APPLICATION INFORMATION
BGF1901-10
handbook, halfpage
TEMPERATURE COMPENSATED GATE BIAS
input
MBL781
output
Fig.10 Test circuit.
List components (see Figs COMPONENT Note striplines double copper-clad printed-circuit board (RO5880) with thickness 0.79 DESCRIPTION multilayer ceramic chip capacitor tantalum capacitor electrolytic capacitor grade Ferroxcube bead metal film resistor stripline; note VALUE 4330 36300 2322 13109 CATALOGUE NUMBER
2003
Philips Semiconductors
Product specification
GSM1900 EDGE power module
BGF1901-10
handbook, full pagewidth
output
input
MBL780
Dimensions
Fig.11 Printed-circuit board component layout.
2003
Philips Semiconductors
Product specification
GSM1900 EDGE power module
PACKAGE OUTLINE
BGF1901-10
Plastic rectangular single-ended flat package; flange mounted; mounting holes; in-line leads
SOT365C
scale
DIMENSIONS original dimensions) UNIT 0.56 0.46 30.1 29.9 18.6 18.4 3.55 3.45 15.4 15.2 7.75 7.55 0.25 12.8 12.6
2.54 20.32
41.75 48.4 41.65 48.0
OUTLINE VERSION SOT365C
REFERENCES JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 01-06-06 02-11-13
2003
Philips Semiconductors
Product specification
GSM1900 EDGE power module
DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
BGF1901-10
This data sheet contains data from objective specification product development. Philips Semiconductors reserves right change specification manner without notice. This data sheet contains data from preliminary specification. Supplementary data will published later date. Philips Semiconductors reserves right change specification without notice, order improve design supply best possible product. This data sheet contains data from product specification. Philips Semiconductors reserves right make changes time order improve design, manufacturing supply. Relevant changes will communicated Customer Product/Process Change Notification (CPCN).
Preliminary data Qualification
Product data
Production
Notes Please consult most recently issued data sheet before initiating completing design. product status device(s) described this data sheet have changed since this data sheet published. latest information available Internet data sheets describing multiple type numbers, highest-level product status determines data sheet status. DEFINITIONS Short-form specification data short-form specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook. Limiting values definition Limiting values given accordance with Absolute Maximum Rating System (IEC 60134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Applications that described herein these products illustrative purposes only. Philips Semiconductors make representation warranty that such applications will suitable specified without further testing modification. DISCLAIMERS Life support applications These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips Semiconductors customers using selling these products such applications their risk agree fully indemnify Philips Semiconductors damages resulting from such application. Right make changes Philips Semiconductors reserves right make changes products including circuits, standard cells, and/or software described contained herein order improve design and/or performance. When product full production (status `Production'), relevant changes will communicated Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes responsibility liability these products, conveys licence title under patent, copyright, mask work right these products, makes representations warranties that these products free from patent, copyright, mask work right infringement, unless otherwise specified.
2003
Philips Semiconductors worldwide company
Contact information additional information please visit Fax: 24825 sales offices addresses send e-mail
Koninklijke Philips Electronics N.V. 2003
SCA75
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
7p/01/pp11
Date release: 2003
Document order number:
9397 11974

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