omponents 20736 Marilla Street Chatsworth 2N7002W N-Channel

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omponents 20736 Marilla Street Chatsworth 2N7002W N-Channel

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ON-Resistance Input Capacitance Gate Threshold Voltage Fast Switching Speed Input/Output Leakage
omponents 20736 Marilla Street Chatsworth
2N7002W
N-Channel Enhancement Mode Field Effect Transistor
SOT-323
Mechanical Data
Case: SOT-323, Molded Plastic Terminals: Solderable MIL-STD-202, Method Terminal Connections: Diagram Marking Code:
Maximum Ratings
Operating Temperature: -55°C +150°C Storage Temperature: -55°C +150°C Maximum Thermal Resistance; 625K/W Junction Ambient Parameter Drain-Source-Voltage Drain-Gate Voltage Gate-Source-Voltage 1.0M Continuous Pulsed Symbol VDSS VDGR Value 1.60 Unit
DIMENSIONS INCHES .071 .087 .045 .053 .079 .087 .026 Nominal .047 .055 .012 .016 .000 .004 .035 .039 .004 .010 .012 .016 1.80 2.20 1.15 1.35 2.00 2.20 0.65Nominal 1.20 1.40 .000 .100 1.00 .100 .250
NOTE
VGSS
Drain Current (Note Continuous Continuous 100+ Pulsed Total Power Dissipation (Note Derating above
0.90
Suggested Solder Layout
0.70
mW/+
1.90
Note: Valid provided that terminals kept specified ambient temperature. Pulse width 300µs, duty cycle
0.65 0.65
www.mccsemi.com
Revision: 2003/04/30
2N7002W
Electrical Characteristics
Characteristic CHARACTERISTICS (Note Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage CHARACTERISTICS (Note Gate Threshold Voltage
Static Drain-Source On-Resistance 25°C 125°C
unless otherwise specified Symbol BVDSS 25°C 125°C IDSS IGSS VGS(th)
(ON)
Unit
Test Condition 60V, ±20V, VGS, =-250
5.0V, 0.05A 10V, 0.5A
13.5
On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time
ID(ON) Ciss Coss Crss tD(ON) tD(OFF)
10V, 7.5V =10V, 0.2A
30V, 0.2A, VGEN 10V, RGEN 25V, 1.0MHz
Note: Valid provided that terminals kept specified ambient temperature. Pulse width 300ms, duty cycle
www.mccsemi.com
Revision: 2003/04/30
2N7002W
9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V
25°C
DRAIN-SOURCE CURRENT
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
5.0V
5.5V
5.0V
VDS, DRAIN-SOURCE VOLTAGE Fig. On-Region Characteristics
DRAIN CURRENT Fig. On-Resistance Drain Current
50mA
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
10V, 0.5A
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
500mA
5.0V, 0.05A
JUNCTION TEMPERATURE (°C) Fig. On-Resistance Junction Temperature
VGS, GATE SOURCE VOLTAGE Fig. On-Resistance Gate-Source Voltage
www.mccsemi.com
Revision: 2003/04/30

omponents 20736 Marilla Street Chatsworth 2N7002W N-Channel

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