Protects against overvoltage reverse supply Integrated low-power, high
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OVRB1 Overvoltage Reverse Battery Protection
Protects against overvoltage reverse supply Integrated low-power, high-voltage bandgap voltage reference regulation, switch on/off only operation Voltage drop <100mV IDD=10mA Designed (0.5µ) processes Description
OVRB1 low-power, low-cost integrated overvoltage reverse supply protection circuit designed powered from nominal supply, that required withstand misconnections supply without damage. cell especially suited automotive applications where overvoltage high maximum battery voltage (16V) reverse connection applies supply only. circuit passes positive supply voltage load whenever VSUP lower than overvoltage threshold. When that threshold exceeded, circuit blocks supply voltage from reaching load. supply polarity reversed, reverse current limited safe level, protect load avoid excessive power dissipation. cell does require double-poly capacitors, resistors with high sheet resistance, thick gate devices. Therefore, used processes. Performance characteristics have been measured ceramic packages only (see Note
patent pending
Performance Features
Performance Features
Nominal supply voltage VSUP Maximum overvoltage 500mW Maximum reverse supply 500mW Maximum voltage drop VSUP @10mA Overvoltage threshold Internal bandgap voltage reference Internal bias current Temperature range Maximum supply current (simulated) Status
Value
5.0V 17.5V 100mV 5.9V 1.19 1.30V 10µA +150oC 125µA Functional
Cell Definition
Name
VSUP VSUP VREF VREF
Description
Positive voltage supply Ground Substrate connection Protected output voltage Bandgap voltage reference output
OVRB1
Semiconductor www.amis.com
OVRB1 Overvoltage Reverse Battery Protection
General Notes
cell allows some design modification, such centering bandgap within specified temperature range adjusting overvoltage threshold. more details, Application Notes. Ceramic package results based measurement individual packaged ICs, from wafer. internal bandgap voltage reference unbuffered used with capacitive loads only. operational with VSUP from 16V. 10µA internal bias current from VSUP available used optionally. +/-20% tolerance, mostly resistor process variations, temperature coefficient typically around +/-100ppm/oC. fluctuations variable load current reduced placing smoothing capacitor between VSS. should connected clean ground potential ensure low-noise operation. star connection when necessary.
Application Notes
Although designed especially automotive applications, OVRB1 used variety applications where ASIC protected against overvoltage reverse supply conditions supply pin. However, should emphasized that ASIC must have nominal supply. Operation with above 5.5V extended periods time recommended, potential reliability issues load being protected. OVRB1 intended used applications where normally powered directly from automotive battery, protect against other automotive conditions, such "double battery" "load dump". OVRB1 designed with power cost prime considerations. Some degree cell customization acceptable could provided AMIS. instance, bandgap reference recentered, overvoltage threshold adjusted, maximum load current voltage drop changed. However, late-programming metal options available, required changes should defined early ASIC design process. cell with voltage regulation (OVRB2) also available. Please contact AMIS special requirements.
Semiconductor www.amis.com
2002 Semiconductor, Inc. Semiconductor makes warranty products, other than those expressly contained company's standard warranty contained Semiconductor's Terms Conditions. company assumes responsibility errors which appear this document, reserves right change devices specifications detailed herein time without notice, does make commitment update information contained herein. licenses patents other intellectual property Semiconductor granted company connection with sale Semiconductor products, expressly implication.
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