1.23V bandgap voltage reference with PTAT current reference Very tight

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1.23V bandgap voltage reference with PTAT current reference Very tight

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BG001 Untrimmed Precision Bandgap Voltage/Current Reference
1.23V bandgap voltage reference with PTAT current reference Very tight tolerance with 0.45% sigma, measured Accurate better across process corners, simulated Designed most (0.5µ) processes (See General Note Description
BG001 deviation Darlington Bandgap that uses stacked bipolar transistors, offset opamps, matched polysilicon resistors high accuracy without using trim dynamic techniques. cell does require poly-poly capacitors resistors with high sheet resistance. Therefore, used variety applications. Performance characteristics have been measured both ceramic plastic packages. (See Datasheet Note
Performance Features
Performance Features
Nominal Output Voltage standard deviation from nominal output voltage Nominal reference current Maximum temperature coefficient over range -55C 125C Nominal supply voltage, Nominal supply current, Maximum load current Maximum supply current (simulated) Status
Value
1.226V 5.0µA 3.3V 75µA 100µA 167µA Functional
Cell Definition
Name
AVDD PWRUP_BG AVSS AVDD
Description
Positive voltage supply Ground PTAT current output Circuit enable signal Substrate connection Bandgap ground (star connection required) Bandgap reference voltage output
BG001
15UA VBG_POS VBG_NEG
AVSS I5UA PWRUP_BG VGB_NEG VBG_POS
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BG001 Untrimmed Precision Bandgap Voltage/Current Reference
General Notes
Although bandgap implemented processes, should noted that differences sheet resistance between single polysilicon, double polysilicon, high resistivity polysilicon processes, bandgap output voltage shift will need recentered. this effect, programmable resistor taps provided circuit layout. Plastic package results based measurement individual packaged bangdaps, from wafer. detailed explanation temperature coefficient derived, please refer Application Notes below. computed coefficients based same measured plastic packages (see Note AVDD power supply rejection ratio dramatically improved necessary placing compensation capacitor between output node, VBG_POS, supply node, AVDD.
Application Notes
most common questions regarding bandgap performance "what tolerance" "what temperature coefficient?" There important things consider when talking about bandgap tolerance. First voltage given temperature, second drift over temperature. Regarding voltage given temperature, were choose random part "off shelf" this bandgap circuit measure voltage room temperature, would 1.226V +/-21mV. This number been derived from both experimental simulated data. assumes worst case shifts resistance, bipolars, mismatches (all sigma numbers). Since these parameters statistically independent, calculated that roughly part million will outside +/-21mV limit. 125C limits widened somewhat: 1.223V +/-26mV. limit tighter 1.223V +/-17mV. Temperature drift source confusion because bandgap voltage versus temperature curve parabolic. Some specify temperature coefficient when average temperature coefficient min/max drift over temperature range desirable. Strictly defined, temperature coefficient (1/V)*dV/dT given temperature. Since curve nonlinear, this slope given temperature very meaningful. That used extrapolate value another temperature. Note that since maximum variation over 125C 8mV, could that maximum temperature coefficient (1/1.226)*(8mV)/(125-30) ppm/C. Again, caution advised when quoting temperature coefficients; user must informed defined.
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1.23V bandgap voltage reference with PTAT current reference Very tight

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