6500 1370 2160 21900 1.18 0.632 Phase Control Thyristor 5STP

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6500 1370 2160 21900 1.18 0.632 Phase Control Thyristor 5STP

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6500 1370 2160 21900 1.18 0.632
Phase Control Thyristor
5STP 12K6500
Doc. 5SYA1069-01 June
Patented free-floating silicon technology on-state switching losses Designed traction, energy industrial applications Optimum power handling capability
Blocking
Maximum rated values
Symbol VDSM, VRSM VDRM, VRRM dV/dtcrit Parameter
Conditions Exp. 0.67 VDRM, 125°C
5STP 12K6500 5STP 12K6200 5STP 12K5800 6500 5600 6200 5300 2000 V/µs Unit 5800 4900
Characteristic values
Symbol Conditions IDSM IRSM VDSM, 125°C VRSM, 125°C
Forward leakage current Reverse leakage current
VDRM/ VRRM equal VDSM/ VRSM values 110°C
Mechanical data
Maximum rated values
Parameter Mounting force Acceleration Acceleration
Characteristic values
Symbol Conditions Device unclamped Device clamped
Unit Unit
Parameter Weight Surface creepage distance strike distance
Symbol Conditions
1.15
Maximum ratings those values beyond which damage device occur
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
5STP 12K6500
On-state
Maximum rated values
Parameter Average on-state current on-state current Peak non-repetitive surge current Limiting load integral Peak non-repetitive surge current Limiting load integral
Characteristic values
Symbol Conditions ITAVM ITRMS ITSM ITSM 125°C, 125°C, VR=0 Half sine wave, 70°C
1370 2160 21900 2400 23350 2260
Unit kA2s kA2s Unit
Parameter On-state voltage Threshold voltage Slope resistance Holding current Latching current
Symbol Conditions 25°C 125°C 25°C 125°C 1500 Tvj= 125°C 2000 Tvj= 125°C
2.12 1.18 0.632
Switching
Maximum rated values
Parameter Critical rate rise onstate current Critical rate rise onstate current
Symbol Conditions di/dtcrit di/dtcrit 125°C, ITRM 3250 Cont. Cont.
1000
Unit A/µs A/µs
Circuit-commutated turn-off time
Characteristic values
125°C, ITRM 2000 diT/dt A/µs, 0.67VDRM, dvD/dt V/µs,
Parameter Recovery charge Delay time
Symbol Conditions 125°C, ITRM 2000 diT/dt A/µs 0.4VDRM,
1600
2600
Unit
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1069-01 June page
5STP 12K6500
Triggering
Maximum rated values
Parameter Peak forward gate voltage Peak forward gate current Peak reverse gate voltage Gate power loss Average gate power loss
Characteristic values
Symbol Conditions VFGM IFGM VRGM PGAV Symbol Conditions 25°C 25°C VDRM, Tvjmax 125°C VDRM, Tvjmax 125°C gate current
Unit
Fig. Unit
Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Gate non-trigger current
Thermal
Maximum rated values
Parameter Operating junction temperature range
Characteristic values
Symbol Conditions
Unit Unit K/kW K/kW K/kW K/kW K/kW
Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled
Thermal resistance junction Rth(j-c) case Rth(j-c)A Rth(j-c)C Thermal resistance case Rth(c-h) heatsink Rth(c-h)
Analytical function transient thermal impedance:
ZthJC(t) Ri(1
Ri(K/kW) i(s) 0.987943 2.42 0.09946 0.81 0.015662 0.004019 Fig. Transient thermal impedance junction-to case.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1069-01 June page
5STP 12K6500
Fig. Isothermal on-state characteristics Isothermal on-state characteristic model:
Fig. Isothermal on-state characteristics
ln(IT
25°C, Valid 14000 1.1999e-5 3.0014e-4 2.3761e-1 -5.5612e-3 125°C, Valid 14000 1.9773e-4 2.9592e-4 1.3114e-1 1.8702e-2
Fig. On-state power dissipation mean on-state current. Turn losses excluded.
Fig. Max. permissible case temperature mean on-state current.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1069-01 June page
5STP 12K6500
Fig. Surge on-state current pulse length. Halfsine wave.
IGon diG/dt tp(IGM) A/µs 5.20
Fig. Surge on-state current number pulses. Half-sine wave, 50Hz.
diG/dt (IGM) (IGon)
IGon
Fig. Recommended gate current waveform.
Fig. Max. peak gate power loss.
Fig. Recovery charge decay rate on-state current.
Fig. Peak reverse recovery current decay rate on-state current.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1069-01 June page
5STP 12K6500
Fig. Device Outline Drawing.
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Switzerland Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone Email Internet (0)58 1419 (0)58 1306 abbsem@ch.abb.com www.abbsem.com
Doc. 5SYA1069-01 June

6500 1370 2160 21900 1.18 0.632 Phase Control Thyristor 5STP

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