2500 IGBT-Die 5SMX12L2508 size: 12.4 12.4 Doc. 5SY
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2500
IGBT-Die
5SMX12L2508
size: 12.4 12.4
Doc. 5SYA1611-00 Aug.
on-state IGBT Highly rugged design
Maximum Rated Values
Parameter Collector-Emitter Voltage Collector Current Electro Static Discharge Symbol VCES
(Tvj 25°C, unless specified otherwise) Conditions Values 2500 Device Sensitive Unit
IGBT Characteristic Values
Parameter Collector-Emitter Sat.Voltage Collect.-Emit. leakage Current Gate-Emitter leakage Current Gate-Emitter Threshold Voltage Internal gate resistance Symbol VCE(sat) ICES IGES VGE(TO) RGint
25°C, unless specified otherwise) Conditions Icrated, 2500V, Tvj=125°C ,VGE min. typ. max. 2.65 ±500 Unit
Mechanical Characteristics
Parameter Overall Dimensions 12.4 12.4 AISi1/Ti/Ni/Ag AISi1 Exposed (except gate pad) Front metal Gate Thickness Metallization Front Back Unit
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
5SMX12L2508
Outline Drawing
Note: dimensions shown Positioning tolerance emitter contact area (shaded area) centre 0.3mm
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Switzerland Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland
Doc. 5SYA1611-00 Aug.
Telephone (0)58 1419 (0)58 1306 Email abbsem@ch.abb.com Internet www.abbsem.com
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