StakPakH Series Presspack Diode 5SLF 20H2500 Preliminar
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StakPakH Series
Presspack Diode
5SLF 20H2500
Preliminary Specification
Doc. 5SYA1584-01 June
Rugged High tolerance uneven mounting pressure Suitable series connection Explosion resistant package Modular design concept, available wide range current ratings
Maximum Rated Values1)
Parameter forward current Repetitive peak forward current Surge current Total power dissipation Junction temperature Storage temperature Mounting force
Symbol VRRM IFSM Ptot Tstg
Conditions
2500 2000 4000
Unit
Collector-emitter voltage
half-sinewave 25°C
10000
+125 +125
Maximum rated values indicate limits beyond which damage device occur Datasheet parameters according 60747-2 detailed mounting instructions refer document 5SYA2037-01
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
5SLF 20H2500
Diode Characteristic Values
Parameter Repetitive peak reverse current Peak forward recovery voltage Forward voltage Reverse recovery current Reverse recovery charge Reverse recovery time Reverse recovery energy Symbol IRRM Erec 1250 2000 dI/dt kA/µs inductive load 2000 VRRM Conditions 125°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C 25°C 125°C 1.85 1.80 1000 2.30 2.20 Unit
Thermal Properties
Parameter Thermal resistance junction case Thermal resistance case heatsink Operating junction temperature Symbol Rth(j-c) Rth(c-h) Heatsink flatness Complete module area Each submodule area Tvjop Roughness +125 Conditions Unit 0.010 0.002
Mechanical Properties
Parameter Dimensions Symbol Conditions Typical outline drawing Unit
236*150*26
Clearance distance Surface creepage distance Weight
acc. 60664-1 EN50124-1 acc. 60664-1 EN50124-1
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1584-01 June page
5SLF 20H2500
Electrical configuration
Cathode Anode
Aux. Anode
Outline drawing
StakPak
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1584-01 June page
5SLF 20H2500
4000 3750 3500 3250 3000 2750 2500 2250 IF[A] 2000 1750 1500 1250 1000 VF[V] 25°C 125°C
Fig.
Typical diode on-state characteristics
Fig.
Typical forward recovery voltage versus di/dt
Fig.
Typical diode reverse recovery characteristics versus forward current
Fig.
Typical diode reverse recovery characteristics versus dI/dt
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Doc. 5SYA1584-01 June page
Semiconductors
5SLF 20H2500
0.100
Analytical function transient thermal impedance:
c)(t) Ri(1
th(j-c) Diode [K/W]
0.010
2.585
4.712 14.9
0.933 0.959
1.186 0.151
Ri(K/kW) i(ms)
0.001 0.001
0.010
0.100
1.000
10.000
Fig.4
Maximum thermal impedance diode versus time
Environmental class according 60721
Mode Storage Transportation Operation Class Document 9101-01 9102-01 9103-01
Switzerland Ltd, Semiconductors reserves right change specifications without notice.
Switzerland Semiconductors Fabrikstrasse CH-5600 Lenzburg, Switzerland Telephone Email Internet (0)58 1419 (0)58 1306 abbsem@ch.abb.com www.abb.com/semiconductors
Doc. 5SYA1584-01 June
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