13.5 7.89 High Voltage High Current Diode Pulsed Power Applicatio
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VRRM IPULSE VDcmax
13.5 7.89
High Voltage High Current Diode Pulsed Power Applications
5SDA 27Z1350
Features
Multichip Design with Wafers Series Single Pulse Applications Voltage Sharing Resistors included Compact Design Glazed Ceramic Presspack Housing High Reliability
VRRM IPULSE
di/dt
Repetitive reverse blocking voltage Permanent voltage failure rate Max. voltage Max. Pulse Current Max. current rate rise Limiting load integral Forward voltage drop Voltage sharing resistors
13.5
125°C Ambient cosmic radiation level open air. 50°C Half sine wave, 50°C, 4000 wafer level
A/µs Single Pulse 7.89
Switzerland reserves right change specifications without notice
Pulse Power Device
5SDA 27Z1350
Mechanical Data
min. max. Pole-piece diameter Housing thickness Weight Surface creepage distance strike distance
Switzerland Ltd, Semiconductors
Pulse Power Fabrikstrasse CH-5600 Lenzburg, Switzerland Tel.: +41-58-586-1742 Fax: +41-58-586-1310 E-Mail: pulsepower.abbsem@ch.abb.com Internet: www.abb.com/semiconductors
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