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HAF1009(L), HAF1009(S)
Silicon Channel Series Power Switching
ADE-208-1525 Rev.0 2002 Description
This over temperature shut-down capability sensing junction temperature. This built-in over temperature shut-down circuit gate area. this circuit operation shut-down gate voltage case high junction temperature like applying over power consumption, over current etc.
Features
Logic level operation Gate drive) High endurance capability against short circuit Built-in over temperature shut-down circuit Latch type shut-down operation (Need voltage recovery)
Outline
LDPAK
Gate resistor
Tempe- rature sencing circuit
Latch circuit
Gate shut- down circuit
Gate Drain Source Drain
HAF1009(L), HAF1009(S)
Absolute Maximum Ratings
25°C)
Item Drain source voltage Gate source voltage Gate source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS VGSS (pulse) PchNote Tstg
Ratings
Note1
Unit
+150
Notes: 10µs, duty cycle Value 25°C
Typical Operation Characteristics
25°C)
Item Input voltage Symbol Input current (Gate shut down) IIH1 IIH2 Input current (Gate shut down) Shut down temperature Gate operation voltage IIH(sd)1 IIH(sd)2 -3.5 -3.5 -0.8 -0.35 -1.2 -100 Unit -3.5 -1.2 -3.5 Channel temperature Test Conditions
Rev.0, May. 2002, page
HAF1009(L), HAF1009(S)
Electrical Characteristics
25°C)
Item Drain current Drain current Drain source breakdown voltage Gate source breakdown voltage Gate source breakdown voltage Gate source leak current Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 Input current (shut down) IGS(OP)1 IGS(OP)2 Zero gate voltage drain current Gate source cutoff voltage Forward transfer admittance IDSS VGS(off) |yfs| RDS(on) Coss td(on) td(off) tos1 tos2 -1.1 -0.8 -0.35 14.8 1500 10.6 -0.95 -100 -2.15 Unit diF/dt A/µs Test Conditions -3.5, -1.2V, -800 -3.5 -1.2 -3.5 -10V -20A,
Note3 Note3 Note3
Static drain source state RDS(on) resistance Output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Over load shut down operation time
Note4
Notes: Pulse test Including junction temperature rise over loaded condition.
Rev.0, May. 2002, page
HAF1009(L), HAF1009(S)
Main Characteristics
Power Temperature Derating
Maximum Safe Operation Area -500 -200
Thermal shut down operation area
Drain Current
-100 Operation
Channel Dissipation
this area limited RDS(on)
(°C)
-0.5 25°C -0.3
-0.5
-100
Case Temperature
Drain Source Voltage
Typical Output Characteristics -3.5
Typical Transfer Characteristics Pulse Test
Drain Current
Drain Current
-25°C 25°C 75°C
75°C 25°C -25°C Gate Source Voltage
Pulse Test Drain Source Voltage
Rev.0, May. 2002, page
HAF1009(L), HAF1009(S)
Drain Source State Resistance DS(on)
Drain Source Saturation Voltage Gate Source Voltage
Drain Source Saturation Voltage DS(on)
Static Drain Source Sate Resistance Drain Current Pulse Test
-2.0 -1.6
Pulse Test
-1.2
-0.1 -0.5
-0.8 -0.4 Gate Source Voltage
-100
Drain Current
Forward Transfer Admittance |yfs|
DS(on)
Drain Source State Resistance
Static Drain Source State Resistance Temperature Pulse Test Case Temperature (°C)
Forward Transfer Admittance Drain Current Pulse Test 25°C 75°C
-0.1 -100
-25°C
Drain Current
Rev.0, May. 2002, page
HAF1009(L), HAF1009(S)
Body Drain Diode Reverse recovery Time 1000 1000 Switching Characteristics
Reverse Recovery Time (ns)
Switching Time (µs)
25°C
-0.5 -100
d(off) d(on) duty
-100
-0.1
-0.1 -0.2 -0.5
Reverse Drain Current
Drain Current
Reverse Drain Current Souece Drain Voltage Pulse Test
Typical capacitance Drain Source Voltage 10000
Reverse Drain Current
Capacitance (pF)
-2.0
1000
-0.4 -0.8 -1.2 -1.6 Source Drain Voltage Drain Source Voltage
Rev.0, May. 2002, page
HAF1009(L), HAF1009(S)
Gate Source Voltage Shutdown Time Load-Short Test
Shutdown Case Temperature Gate Source Voltage
Shutdown Case Temperature (°C)
Gate Source Voltage
-24V
0.0001 0.001 0.01
Shutdown Time Load-Short Test
Gate Source Voltage
Normalized Transient Thermal Impedance Pulse Width
Normalized Transient Thermal Impedance
25°C
0.05
c(t) 2.5°C/W, 25°C
0.03
0.01
Pulse Width
Rev.0, May. 2002, page
HAF1009(L), HAF1009(S)
Package Dimensions
January, 2002
Unit:
(1.4)
4.44 0.15
10.2
11.3
10.0
1.27 0.86 0.76 2.54 2.54
11.0
2.59
Hitachi Code JEDEC JEITA Mass (reference value)
LDPAK
Rev.0, May. 2002, page
HAF1009(L), HAF1009(S)
January, 2002
Unit:
4.44 10.2
(1.4)
10.0
(1.5)
(1.5)
1.27
2.54
0.86
2.54
Hitachi Code JEDEC JEITA Mass (reference value)
LDPAK (S)-(1)
Rev.0, May. 2002, page
0.15
HAF1009(L), HAF1009(S)
Disclaimer
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Sales Offices
Hitachi, Ltd.
Semiconductor Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00 Singapore 049318 <65>-6538-6533/6538-8577 <65>-6538-6933/6538-3877 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road Hung-Kuo Building Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong <852>-2735-9218 <852>-2730-0281
Copyright Hitachi, Ltd., 2002. rights reserved. Printed Japan.
Colophon
Rev.0, May. 2002, page
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