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Cautions Keep safety first your circuit designs! Renesas Technolo
Top Searches for this datasheetCautions Keep safety first your circuit designs! Renesas Technology Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) nonflammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Renesas Technology Corporation product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Renesas Technology Corporation third party. 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Please contact Renesas Technology Corporation authorized Renesas Technology Corporation product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Renesas Technology Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Renesas Technology Corporation further details these materials products contained therein. 2SJ363 Silicon P-Channel ADE-208-1194 1st. Edition Mar. 2001 Application frequency power switching Features on-resistance drive current gate drive device driven from source Outline UPAK Gate Drain Source Drain 2SJ363 Absolute Maximum Ratings 25°C) Item Drain source voltage Gate source voltage Drain current Drain peak current Body drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS D(pulse)* Pch* Tstg Ratings +150 Unit Notes: duty cycle Value alumina ceramic board Marking "PY". Electrical Characteristics 25°C) Item Drain source breakdown voltage Gate source breakdown voltage Gate source leak current Symbol V(BR)DSS V(BR)GSS -1.0 |yfs| Ciss Coss Crss d(on) d(off) 0.35 0.25 1.65 25.9 14.9 -2.0 0.75 0.45 Unit Test conditions -100 Zero gate voltage drain current Gate source cutoff voltage Static drain source state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time VGS(off) RDS(on) 2SJ363 Maximum Channel Power Dissipation Curve Channel Power Dissipation aluminam ceramic board) -0.3 -0.1 Operation this area limited DS(on) Maximum Safe Operation Area Drain Current -0.03 -0.01 (°C) -0.1 -0.3 -100 Ambient Temperature Drain Source Voltage Typical Output Characteristics -4.5 -2.0 Typical Transfer Characteristics -1.6 Pulse Test -1.2 -2.5 Drain Current -0.8 -0.4 Drain Current -1.5 Drain Source Voltage Gate Source Voltage 2SJ363 Drain Source Saturation Voltage Gate Source Voltage Drain Source State Resistance DS(on) -1.0 Drain Source Saturation Voltage DS(on) Static Drain Source State Resistance Drain Current Pulse Test -0.8 -0.6 -0.4 -0.2 -0.5 0.03 0.01 -0.01 -0.03 -0.1 -0.3 Drain Current Gate Source Voltage Static Drain Source State Resistance DS(on) Forward Transfer Admittance Static Drain Source State Resistance Temperature Pulse Test Forward Transfer Admittance Drain Current Pulse Test -0.5 Drain Current -0.5 -0.1 -0.2 -0.5 Case Temperature (°C) 2SJ363 Typical Capacitance Drain Source Voltage Coss Switching Time (µs) Switching Characteristics Capacitance (pF) d(off) Ciss Drain Source Voltage duty d(on) -0.5 Crss -0.05 -0.1 -0.2 Drain Current Reverse Drain Current Source Drain Voltage Pulse Test Reverse Drain Current -0.4 -0.8 -1.2 -1.6 -2.0 Source Drain Voltage 2SJ363 Package Dimensions January, 2001 Unit: 0.44 (2.5) (1.5) 0.44 Hitachi Code JEDEC EIAJ Mass (reference value) (0.4) 0.53 0.48 4.25 UPAK Conforms 0.050 (0.2) 2SJ363 Cautions Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products. Hitachi, Ltd. Semiconductor Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 NorthAmerica Europe Asia Japan http://sicapac.hitachi-asia.com Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00, Singapore 049318 <65>-538-6533/538-8577 <65>-538-6933/538-3877 http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road, Hung-Kuo Building, Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon, Hong Kong <852>-(2)-735-9218 <852>-(2)-730-0281 http://www.hitachi.com.hk further information write Hitachi Semiconductor (America) Inc. East Tasman Drive, Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Copyright Hitachi, Ltd., 2000. rights reserved. Printed Japan. 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