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HN58X24512I
Two-wire serial interface 512k EEPROM (64-kword 8-bit)
ADE-203-1239B Preliminary Rev. Apr. 2002 Description
HN58X24512I two-wire serial interface EEPROM (Electrically Erasable Programmable ROM). realizes high speed, power consumption high level reliability employing advanced MNOS memory technology CMOS process voltage circuitry technology. also 128byte page programming function make it's write operation faster. Note: Hitachi's serial EEPROM authorized using consumer applications such cellular phone, camcorders, audio equipment. Therefore, please contact Hitachi's sales office before using industrial applications such automotive systems, embedded controllers, meters.
Features
Single supply: Two-wire serial interface (I2Cserial bus* Clock frequency: (2.5 V)/400 (1.8 Power dissipation: Standby: (max) Active (Read): (max) Active (Write): (max) Automatic page write: 128-byte/page Write cycle time: (2.5 V)/15 (1.8 Endurance: Cycles (Page write mode) Data retention: Years
Preliminary: specification this device subject change without notice. Please contact your nearest Hitachi's Sales Dept. regarding specification.
HN58X24512I
Small size packages: SOP-8pin (200 mil-wide) Shipping tape reel: 1,500 IC/reel Temperature range: +85°C Note: trademark Philips Corporation.
Ordering Information
Type HN58X24512FPI Internal organization Operating voltage 512k 8-bit) Frequency Package 8-pin plastic (FP-8DF)
Arrangement
8-pin (Top view)
Description
name Function Device address Serial clock input Serial data input/output Write protect Power supply Ground connection
HN58X24512I
Block Diagram
Address generator Control logic
High voltage generator
decoder
Memory array
decoder
Y-select Sense amp.
Serial-parallel converter
Absolute Maximum Ratings
Parameter Supply voltage relative Input voltage relative Operating temperature range* Storage temperature range
Symbol Topr Tstg
Value -0.6 +7.0 -0.5* +7.0* +125
Unit
Notes: Including electrical characteristics data retention. (min): -3.0 pulse width Should exceed
Operating Conditions
Parameter Supply voltage Symbol Input high voltage Input voltage Operating temperature Topr -0.3*
0.5*
Unit
Notes: (min): -1.0 pulse width (max): pulse width
HN58X24512I
Characteristics +85°C,
Parameter Input leakage current Symbol Output leakage current Standby current Read current Write current Output voltage VOL2 Unit Test conditions (SCL, SDA) (A0, Vout Read Write
VOL1
Capacitance 25°C, MHz)
Parameter Symbol Unit Test conditions Vout
Input capacitance SCL, Cin*1 Output capacitance (SDA) Note: CI/O*
This parameter sampled 100% tested.
HN58X24512I
Characteristics +85°C,
Test Conditions Input pules levels: Input rise fall time: Input output timing reference levels: Output load: Gate
Parameter Clock frequency Clock pulse width Clock pulse width high Noise suppression time Access time free time next mode Start hold time Start setup time Data hold time Data setup time Input rise time Input fall time Stop setup time Data hold time Write cycle time Symbol HIGH HD.STA SU.STA HD.DAT SU.DAT SU.STO 1200 1200 1000 Unit Notes
Notes: This parameter sampled 100% tested. time from stop condition internally controlled write cycle.
HN58X24512I
Timing Waveforms
Timing
1/fSCL tLOW
tSU.STA tHD.STA (in) (out)
tHIGH
tHD.DAT
tSU.DAT
tSU.STO
tBUF
Write Cycle Timing
Stop condition Start condition
Write data (Address (n))
(Internally controlled)
HN58X24512I
Function
Serial Clock (SCL) used control serial input/output data timing. input used positive edge clock data into EEPROM device negative edge clock data each device. Maximum clock rate MHz. Serial Input/Output Data (SDA) bidirectional serial data transfer. needs pulled resistor that open-drain driven structure. proper resistor value your system considering VOL, capacitance. Except start condition stop condition, which will discussed later, transition needs completed during period. Data Validity (SDA data change timing waveform)
Data change Note: Data change
High-to-low low-to-high change should done during periods.
HN58X24512I
Device Address (A0, four devices addressed same setting levels these pins different combinations. levels these pins compared with device address code which inputted thought pin. These device selected compare successfully done. These pins internally pulled down device read these pins unconnected. Connections
connection connect Memory size number 512k Note: VCC/V
VCC/V
Note
"VCC/V means that device address should connected VSS. read left unconnected.
Write Protect (WP) When Write Protect (WP) high, write protection feature enabled operates shown following table. When low, write operation memory arrays allowed. read operation always activated irrespective status. When left unconnected, input read because internally pulled down Write Protect Area
status Write protect area Full (512k bit) Normal read/write operation
HN58X24512I
Functional Description
Start Condition high-to-low transition with high needed order start read, write operation. (See start condition stop condition) Stop Condition low-to-high transition with high stop condition. stand-by operation starts after read sequence stop condition. case write operation, stop condition terminates write data inputs place device internally-timed write cycle memories. After internally-timed write cycle which specified tWC, device enters standby mode. (See write cycle timing) Start Condition Stop Condition
(in) Start condition Stop condition
HN58X24512I
Acknowledge addresses data words serially transmitted from 8-bit words. receiver sends zero acknowledge that received each word. This happens during ninth clock cycle. transmitter keeps open receive acknowledgment from receiver ninth clock. write operation, EEPROM sends zero acknowledge after receiving every 8-bit words. read operation, EEPROM sends zero acknowledge after receiving device address word. After sending read data, EEPROM waits acknowledgment keeping open. EEPROM receives zero acknowledge, sends read data next address. EEPROM receives acknowledgment acknowledgment) following stop condition, stops read operation enters stand-by mode. EEPROM receives neither acknowledgment stop condition, EEPROM keeps open without sending read data. Acknowledge Timing Waveform
Acknowledge
HN58X24512I
Device Addressing EEPROM device requires 8-bit device address word following start condition enable chip read write operation. device address word consists 4-bit device code, 3-bit device address code 1-bit read/write(R/W) code. most significant 4-bit device address word used distinguish device type this EEPROM uses "1010" fixed code. device address word followed 3-bit device address code. upper device address data. device address code selects device devices which connected bus. This means that device selected inputted 3-bit device address code equal corresponding hard-wired status. eighth device address word read/write(R/W) bit. write operation initiated this read operation initiated this high. Upon compare device address word, EEPROM enters read write operation after outputting zero acknowledge. EEPROM turns stand-by state device code "1010" device address code doesn't coincide with status correspond hard-wired device address pins Device Address Word
Device address word (8-bit) Device code (fixed) 128k, 256k Device address code code*1
Notes: R/W="1" read write. Don't care bit.
HN58X24512I
Write Operations Byte Write: write operation requires 8-bit device address word with "0". Then EEPROM sends acknowledgment ninth clock cycle. After these, EEPROM receives sequence 8-bit memory address words. Upon receipt this memory address, EEPROM outputs acknowledgment receives following 8-bit write data. After receipt write data, EEPROM outputs acknowledgment "0". EEPROM receives stop condition, EEPROM enters internally-timed write cycle terminates receipt SCL, inputs until completion write cycle. EEPROM returns standby mode after completion write cycle. Byte Write Operation
Device address
Memory address
Memory address
Write data
Start
Stop
Note: Don't care bit.
HN58X24512I
Page Write: EEPROM capable page write operation which allows number bytes bytes written single write cycle. page write same sequence byte write except inputting more write data. page write initiated start condition, device address word, memory address(n) write data (Dn) with every ninth acknowledgment. EEPROM enters page write operation EEPROM receives more write data (Dn+1) instead receiving stop condition. address bits automatically incremented upon receiving write data (Dn+1). EEPROM continue receive write data bytes. address bits reaches last address page, address bits will roll over first address same page previous write data will overwritten. Upon receiving stop condition, EEPROM stops receiving write data enters internally-timed write cycle. Page Write Operation
Device address
Memory address
Memory address
Write data
Write data (n+m)
Start
Stop
Note: Don't care bit.
HN58X24512I
Acknowledge Polling: Acknowledge polling feature used show EEPROM internally-timed write cycle not. This features initiated stop condition after inputting write data. This requires 8-bit device address word following start condition during internally-timed write cycle. Acknowledge polling will operate code "0". Acknowledgment acknowledgment) shows EEPROM internally-timed write cycle acknowledgment shows that internally-timed write cycle completed. Write Cycle Polling using ACK. Write Cycle Polling Using
Send write command
Send stop condition initiate write cycle
Send start condition Send device address word with
returned Next operation addressing memory Send memory address
Send start condition
Send stop condition
Proceed write operation
Proceed random address read operation
Send stop condition
HN58X24512I
Read Operation There three read operations: current address read, random read, sequential read. Read operations initiated same write operations with exception "1". Current Address Read: internal address counter maintains last address accessed during last read write operation, with incremented one. Current address read accesses address kept internal address counter. After receiving start condition device address word (R/W "1"), EEPROM outputs 8-bit current address data from most significant following acknowledgment EEPROM receives acknowledgment acknowledgment) following stop condition, EEPROM stops read operation turned standby state. case EEPROM have accessed last address last page previous read operation, current address will roll over returns zero address. case EEPROM have accessed last address page previous write operation, current address will roll over within page addressing returns first address same page. current address valid while power current address after power will indefinite. random read operation described below necessary define memory address. Current Address Read Operation
Device address
Read data (n+1)
Start
Stop
Note: Don't care bit.
HN58X24512I
Random Read: This read operation with defined read address. random read requires dummy write read address. EEPROM receives start condition, device address word (R/W=0) memory address 8-bit sequentially. EEPROM outputs acknowledgment after receiving memory address then enters current address read with receiving start condition. EEPROM outputs read data address which defined dummy write operation. After receiving acknowledgment "1"(no acknowledgment) following stop condition, EEPROM stops random read operation returns standby state. Random Read Operation
Device address
Memory address
Memory address
Device address 10100 Start
Read data
Start
Dummy write
Stop
Currect address read
Notes: device address code should same (@). Don't care bit.
HN58X24512I
Sequential Read: Sequential reads initiated either current address read random read. EEPROM receives acknowledgment after 8-bit read data, read address incremented next 8-bit read data coming out. This operation continued long EEPROM receives acknowledgment "0". address will roll over returns address zero reaches last address last page. sequential read continued after roll over. sequential read terminated EEPROM receives acknowledgment acknowledgment) following stop condition. Sequential Read Operation
Device address Start Note: Don't care bit.
Read data
Read data (n+1) Read data (n+2) Read data (n+m)
Stop
HN58X24512I
Notes
Data Protection On/Off When turned off, noise inputs generated external circuits (CPU, etc) trigger turn EEPROM unintentional program mode. prevent this unintentional programming, this EEPROM have power reset function. careful notices described below order power reset function operate correctly. should fixed during on/off. high high transition during on/off cause trigger unintentional programming. should turned after EEPROM placed standby state. turn speed (tr) should longer than µs). Write/Erase Endurance Data Retention Time endurance cycles case page programming cycles case byte programming cumulative failure rate). data retention time more than years when device page-programmed less than cycles. Noise Suppression Time This EEPROM have noise suppression function inputs, that noise width less than careful allow noise width more than
HN58X24512I
Package Dimensions
HN58X24512FPI (FP-8DF)
Preliminary
5.65 5.85 5.30
January, 2002
Unit:
0.034 *0.22 0.017 0.20 0.03
1.73 1.02
1.40
1.27
0.063 *0.42 0.064 0.40 0.06
0.14 0.10 0.25
0.114 0.038
*Dimension including plating thickness Base material dimension
Hitachi Code JEDEC JEITA Mass (reference value)
FP-8DF 0.153
HN58X24512I
Cautions
Hitachi neither warrants grants licenses rights Hitachi's third party's patent, copyright, trademark, other intellectual property rights information contained this document. Hitachi bears responsibility problems that arise with third party's rights, including intellectual property rights, connection with information contained this document. Products product specifications subject change without notice. Confirm that have received latest product standards specifications before final design, purchase use. Hitachi makes every attempt ensure that products high quality reliability. However, contact Hitachi's sales office before using product application that demands especially high quality reliability where failure malfunction directly threaten human life cause risk bodily injury, such aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment medical equipment life support. Design your application that product used within ranges guaranteed Hitachi particularly maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions other characteristics. Hitachi bears responsibility failure damage when used beyond guaranteed ranges. Even within guaranteed ranges, consider normally foreseeable failure rates failure modes semiconductor devices employ systemic measures such failsafes, that equipment incorporating Hitachi product does cause bodily injury, fire other consequential damage operation Hitachi product. This product designed radiation resistant. permitted reproduce duplicate, form, whole part this document without written approval from Hitachi. Contact Hitachi's sales office questions regarding this document Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109
further information write
Hitachi Semiconductor (America) Inc. East Tasman Drive Jose,CA 95134 Tel: (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585200 Hitachi Europe GmbH Electronic Components Group Dornacher Strasse D-85622 Feldkirchen Postfach 201,D-85619 Feldkirchen Germany Tel: <49> (89) 9180-0 Fax: <49> (89) Hitachi Asia Ltd. Hitachi Tower Collyer Quay #20-00 Singapore 049318 <65>-6538-6533/6538-8577 <65>-6538-6933/6538-3877 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, 167, North Road Hung-Kuo Building Taipei (105), Taiwan <886>-(2)-2718-3666 <886>-(2)-2718-8180 Telex 23222 HAS-TP http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Tsui, Kowloon Hong Kong <852>-2735-9218 <852>-2730-0281
Copyright Hitachi, Ltd., 2002. rights reserved. Printed Japan.
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