SILICON EPICAp DlODES designed volume, low-inductance
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SILICON EPICAp
DlODES
designed volume,
low-inductance
Mini-L
package
high-
low-cost frequency
control tuning application mechanical
providing
solid state reliability
replacement
tuning methods.
High With Guaranteed Capacitance
Minimum
Values@
,,.':$ ~.~.:. :.\.~ ,,::! .,.:,;. \.~., $.,: i~>. ,.,,.
Values Applications Change
Ideal Microwave Controlled Uniform
Capacitance
MAXIMUM
RATINGS
Rating
,.,J
,,:.
Device Diwipation
25°C
Derate above 25°C Junction Temperature Range
,i>~:,, `.,, *.'.:\;, .:~$:,.'l+~ >;>, .,'?:,k ~.k.,
+125 mW/°C
0152 -m2-
Storage Temperature
,,+,,>m?t~w~
+150
0010
~o~9 004$
0054 03~3 0103 0_~62 ,0012' ,0026 0036 0039
0425 0035
0051 0061
0483 0493
REVERSEVOLTAGE(VOLTS)
con"ert Calhode Anode
,nches
m,ll, mete(s
m.lt,
CASE
MOTOROLA
.1970
ELECTRICAL
CHARACTERISTICS
Characteristic-All Types
25°C
unless otherwise Symbol
noted) Unit
Reverse Breakdown 10uAdc) Reverse Voltage Vdc)
Voltage
Leakage Current
pAdc
Vdc, 85°C) Series Inductance MHz, measured lead stop xl/8")
Case Capacitance MHz)
Diode Capacitance =4.0 Vdc, Device MV3501 MV3502 MV3503 MV3504 MV3505 MV3506 MV3507 10.8 13.5 16.2 19.8 13.2 16.5 19.8 24.2
FIGURE
FIGURE
MERIT
25°C =4.0
FREQUENCY(MHz)
NOTES TESTING
1.030
SPECIFICATIONS
measured package having short instead die, using impedance bridge (Boonton Radio Model 250A without Meter),
measured bridge (Boonton
package Electronics taking
die, using capacitance
Model equivalent). readings admittance
NORMALIZEDto
calculated frquency
bridge, such Boonton U.Y5U 0.970 0.960 substituting
Electronics
Model 33AS8, equation:
specified
following
2Tfc
(°C)
ratio measured Vdc.
divided measured
JUNCTION
TEMPERATURE
,",N,E.
w,,,,,
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