SILICON EPICAPA DIODES diodes eration reliability PREMIUM designe

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SILICON EPICAPA DIODES diodes eration reliability PREMIUM designe

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SILICON EPICAPA DIODES
diodes eration reliability PREMIUM designed line epitaxial, electronic into passivated, abrupt-junction tuning gen-
tuning, microwave
harmonic
applications
range providing
solid-state
replace mechanical Unit-to-Unit
tuning methods. VOLTS
Designers Data sheets permit desig~$~:~i"clrcuits entirelv from information presented. Limit curves repre3~M@t$ound aries device characteris~.% tics given facilitate "worst case" d,~s!g%+k,
>.>, Typical Design Curves >,\>::1, ,,,.:,.,:. !IL*<, >:.!. Guaranteed Temperature Coefficient !*y,\;\ ~,.* `~,.~,.,, ~,$~."> Guaranteed Specified Reverse Voltages "-$,.? ,.*.,;.S .q~( Guaranteed Capacitance Slope versus Reverse Voltage ;~y. ,+*. Guaranteed Min/Max Slope Capacitance versus Reve~s#*,}+:\\ `+'w$:& ,:+}l,<e !.,:$~: Voltage Curve .l:i+i <!*. Complete Design Curves ;::" ,p=}'~,,., ,)?:,,, .'.:<. ,>+.,:,. ;;J\$, ~.~!,\,*>$; .:{$. +~'"' `"*, (s:,,:p ?,:,>. .$$;&, .)+,$.,h$:
Excellent
Uniformity
,~+j~ ,,:J(r*!$ `~li ,(,, `:$:
Reverse Volt:
100MIN
IOOMIN
~ti$
(Note
Watts
Total''Device Dissipation@ 25°C Derate above 25°C
2.67
mW/°C Watts mWl°C
13.3 t175
Operating Junction Temperature Storage Temperature
Range
Tstg
Range
+200
Note
power input rating assumes that adaquate beet sink provided,
Mot~ola
I"c.
ATrademark
TOconvertinches millimeters multiplvbv 25.4 JEDECdimensionsndnotesapplv CASE DO-7 GLASS
MOTOnOLA 1971
ELECTRICAL
CHARACTERISTICS
Characteristic Types
25°C
unless otherwise Symbol
noted) Unit
3reakdown
Voltage
O#Adc)
Measured
ReverseCurrent Vdc) Vdc, 150°C) Series Inductance MHz, Case Capacitance MHz, Lead Length sl)16") Temperature Coefficient Lead Stops l/16")
0.02
0.17 ,,i= ,3;+ ~+.,-~ "<~t:. .,,, ~lk:.; ;.;: :,t. J{,,:., .f<>$p,8),
Diode Capacitance
ppm/vC
Vdc, MHz) Cutoff Frequency Vdc, MHz) ,,,$ ,,,i~
Diode Capacitance Device `4.0 Vdc, I.OMHZ MV1866 MV1868 MV1870 MV1871 MV1872 MV1874 MV1876 MV1877
Figure Merit VR=6
Ravarse Voltage
Slope
Capacitance C4.0fC60
Ratio
Back Page 0.44 0.44 0.45 0.45 0.46 0.46 0.47 0.47 0.47 0.48 0.48 0.48 0.48 0.48 0.48 0.48 0.48 0.48
frequency equations:
substituting
fol!owlng
2tic
(800nton Electronics Model 33AS8 equsvalentl.
using
Diode
Capacitance CJ). measured bridge (Boon Elec.
TCC, Diode Capacitance Temperature Coefficient
guaranteed Vdc, Vdc, comparing MHz, with -65°C MHz, which
capacitance Model
tronics
equivalent).
+85°C
Capacitance Ratio
following measured Vdc. CT(+850C)
equation,
f[nes
ratio
CTI-650C)
CT(250C)
divided
measured
Figure Merit
taking read specified Accuracv iO.1 Ilm#ted measurement admittance bridge
calculated ings
FIGURE 200-
DIODE CAPACITANCE
FIGURE
FIGURE
MERIT
~#~@
`100
FREQUENCY (MHz)
FIGURE 100]
REVERSE
CURRENT
0.001
250c_
0.0001-
JUNCTION TEMPEBATURE(OC)
REVERSE VOLTAGE (VOLTS)
MOTOROLA
Produces
lmc.
EPICAP VOLTAGE-VARIABLE
CAPACITANCE DIODE DEVICE CONSIDERATIONS
FIGURE
Epicap Network equivalent parasitic neglected.
Preasrntation circuit Figure 7showsthe diode. circuit voltage capacitance design purpoaesat Figure represents EPICAP equivalent
elements
Cell cJ\~
very high very frequencies, simplified diode under these conditions. Definitions: Voltage-Variabl Series Resistance lead resistance) Case Capacitance Series Inductance Voltage-Variabie kHz) Junction eJunctio
nCapacitance bulk, contact,
(semiconductor
R=istance (negligible above
$$*,::,,J?
Epicssp Capacitance most important
versus Reverse Bias Voltage design characteristic ioda Capaci-
versus variation detarminad
shown equations (4).
tance Ratio, betwean voltage points curve equation from equations
Epicap Capacitance Variations sting frequency, expression equation
veraus Frequency function equivalent opercircuit (fi+@ simplified
effective capacitance, derived from
~$~@v `i*,<% .,.),. "kc. `f@& W:y, .,.' .,:;T"+ .l,i, .:jt: ,W<.::v +\$J:.b .,;: vR2+@ ,::\,>/., J@ction'* :\+t, V!=!l .f).~j,p>,
"*~@ .@fR .\~;$:,:'t.,.\.tht:, .<., .,.,, Diode.
similar that Figure neglecting admittance such circuit given equation information: very high frequencies
~$r,~::,
Examination
yields following
frequencies,
co=cJatvR=o
Ceq=5
infinity, simple increases calculations from very
`$,,
Raverae 8ias (Volts) Power Law, 0.44 Contact Potential, Volt S0.17 jwLJ
frequency increased from MHz, incre~@*it rneximum 1/LsCJ; increas~<~r<@:''$/ LSCJ toward Very na9@/*~@itance indicate
(inductance) problems
toward
positive capacit&#f$~$
hi~:*~&@@&ncies
jwCeq jtiCC
1W2LSCJ
when capacit~., hl~as!lrements made ,!+.' above MHz. approaches LsCJ, small variations .:.!, cause extreme variations m~s~:~ capacitance. .:$'
".::*,
encountered
EPICAP
Figure Merit, (Q~@@stoff
Frequency
(fco) re6.
X3eq
c.,.
efficiency very quencies,
E,P~$&P response input frequency equation neglected, equation devices cutoff where applies equation whereas
Iated Figure `!#&~$~4~ device defined fre~"%, where:%@@
equation
LdcJRJ2
Rs(l wRSCeq w2CJ2RJ2
high fra-
rewritten fre-
into familih@bP@'of Anoth@%#
parameter
EPICAP point
quenc~$~l:o~$nd frequency Equ*:$%,Sives this relationship. ,,c, ~.~,,, k@rmonic Generation Efficient because
equal Qfmax
2rTRSCBVR +@)2 M(x2) 0.0285; M(x3) fout 1-NT N(x2) 20.8; N(x3) 34.8; N(x4) 62.5 (11) 0.0241; M(x4) 0.196
Using EPICAPS possible with Motorola frequency breakdown generator varies inversely CAPS voltage. Pin(max)
M(BVR
(10)
harmonic generation their high cutoff
Since junction root breakdown accurately predicted
capacitance
with square performance Equation efficiency.
voltage, harmonic
from various idealized governing
models.
gives level maximum gives relationships these equations, adequate
input power equation circuit heat sinking been assumed.
Constants
MOTOROLA
Semiconductor
Products
Inc.
8543

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