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Order this document MRF134/D
MOSFET Line
Power Field-Effect Transistor
N-Channel Enhancement-Mode
designed wideband large-signal amplifier oscillator applications range. Guaranteed Volt, Performance Output Power Watts Minimum Gain Efficiency (Typical) Small-Signal Large-Signal Characterization Typical Performance MHz, Vdc, Output 10.6 Gain 100% Tested Load Mismatch Phase Angles With 30:1 VSWR Noise Figure (Typ) Excellent Thermal Stability, Ideally Suited Class Operation
N-CHANNEL BROADBAND POWER
CASE 211-07, STYLE
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage (RGS Gate-Source Voltage Drain Current Continuous Total Device Dissipation 25°C Derate above 25°C Storage Temperature Range Symbol VDSS VDGR Tstg Value 17.5 +150 Unit Watts W/°C
THERMAL CHARACTERISTICS
Rating Thermal Resistance, Junction Case Symbol Value Unit °C/W
Handling Packaging devices susceptible damage from electrostatic charge. Reasonable precautions handling packaging devices should observed.
MOTOROLA Motorola, Inc. 1994 DEVICE DATA
MRF134
PRODUCT TRANSFERRED M/A-COM
MRF134
ARCHIVE INFORMATION
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted.)
Characteristic Symbol Unit
CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS Zero Gate Voltage Drain Current (VDS Gate-Source Leakage Current (VGS V(BR)DSS IDSS IGSS mAdc µAdc
CHARACTERISTICS
Gate Threshold Voltage Forward Transconductance (VDS VGS(th) mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS MHz) Ciss Coss Crss
ARCHIVE INFORMATION
Output Capacitance (VDS MHz) Reverse Transfer Capacitance (VDS MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDS Vdc, MHz) Common Source Power Gain (VDD Vdc, Pout (Fig. (Fig. Drain Efficiency (Fig. (VDD Vdc, Pout MHz, Electrical Ruggedness (Fig. (VDD Vdc, Pout MHz, VSWR 30:1 Phase Angles) Degradation Output Power 10.6
INPUT
OUTPUT
*Bias Adjust
Arco 406, 15-115 Arco 403, 3.0-35 Arco 402, 1.5-20 Erie Redcap C10, Feedthru 1N5925A Motorola Zener Turns, 0.310 Enamel, Long 3-1/2 Turns, 0.310 Enamel, 0.25 Long
Turns, Enamel Wound Ferroxcube VK-200 19/4B Thin Film Turns, Beckman Instruments 8108 Carbon Board G10, mils
Figure Test Circuit
MRF134
MOTOROLA DEVICE DATA
PRODUCT TRANSFERRED M/A-COM
Pout OUTPUT POWER (WATTS) Pout OUTPUT POWER (WATTS)
Pin, INPUT POWER (MILLWATTS) 1000
13.5 Pin, INPUT POWER (MILLWATTS) 1000
ARCHIVE INFORMATION
Figure Output Power versus Input Power
Figure Output Power versus Input Power
Pout OUTPUT POWER (WATTS)
Pout OUTPUT POWER (WATTS)
VDD, SUPPLY VOLTAGE (VOLTS)
VDD, SUPPLY VOLTAGE (VOLTS)
Figure Output Power versus Supply Voltage
Figure Output Power versus Supply Voltage
Pout OUTPUT POWER (WATTS) Pout OUTPUT POWER (WATTS) VDD, SUPPLY VOLTAGE (VOLTS)
VDD, SUPPLY VOLTAGE (VOLTS)
Figure Output Power versus Supply Voltage
Figure Output Power versus Supply Voltage
MOTOROLA DEVICE DATA
MRF134
PRODUCT TRANSFERRED M/A-COM
Pout OUTPUT POWER (WATTS) TYPICAL DEVICE SHOWN, VGS(th) VGS, GATE-SOURCE VOLTAGE (VOLTS) DRAIN CURRENT (MILLAMPS) CONSTANT
TYPICAL DEVICE SHOWN, VGS(th) VGS, GATE-SOURCE VOLTAGE (VOLTS)
ARCHIVE INFORMATION
Figure Output Power versus Gate Voltage
Figure Drain Current versus Gate Voltage (Transfer Characteristics)
VGS, GATE SOURCE VOLTAGE (NORMALIZED)
1.02 0.98 0.96 0.94 0.92
MAX, MAXIMUM AVAILABLE GAIN (dB)
mAdc FREQUENCY (MHz) 1000 |S21|2
GMAX
|S11|2) |S22|2)
CASE TEMPERATURE (°C)
Figure Gate-Source Voltage versus Case Temperature
Figure Maximum Available Gain versus Frequency
CAPACITANCE (pF)
DRAIN CURRENT (AMPS)
0.07 0.05 0.03 0.02 0.01 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 25°C
Coss Ciss Crss VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure Capacitance versus Voltage
Figure Maximum Rated Forward Biased Safe Operating Area
MRF134
MOTOROLA DEVICE DATA
PRODUCT TRANSFERRED M/A-COM
*Bias Adjust
OUTPUT
INPUT
mils 0-20 Johanson C10, Erie Redcap, 0.001 C12, Feedthru 1N5925A Motorola Zener Turns, Enamel Ferroxcube VK-200 19/4B Thin Film
Turns, Beckman Instruments 8108 0.166 Microstrip 0.166 Microstrip 0.95 0.166 Microstrip 0.166 Microstrip 0.85 0.166 Microstrip Board Glass Teflon, mils
Figure Test Circuit
Pout Zin{ ZOL* Zin{ Ohms 21.2 j25.4 14.6 j22.1 j18.8 j10.8 ZOL* Ohms 20.1 j46.7 19.2 j38.2 17.5 j33.5 16.9 j26.9
Shunt Resistor Gate-to-Ground ZOL* Conjugate optimum load impedance ZOL* into which device output operates ZOL* given output power, voltage frequency.
Figure Large-Signal Series Equivalent Input/Output Impedances, Zin, ZOL*
MOTOROLA DEVICE DATA
MRF134
PRODUCT TRANSFERRED M/A-COM
ARCHIVE INFORMATION
(MHz)
|S11| 0.989 0.989 0.988 0.985 0.977 0.965 0.950 0.931 0.912 0.892 0.874 0.855 0.833 0.827 0.821 0.814 0.808 0.802 0.788 0.774 0.763 0.751 0.740 0.719 0.704 0.687 0.673 0.668 0.669 0.662 0.654 0.650 0.638 0.614 0.641 0.638 0.633 0.628 0.625 -1.0 -2.0 -5.0 -100 -104 -108 -113 -117 -120 -123 -125 -127 -129 -131 -132 -133 -135 -137 -138 -140 |S21| 11.27 11.27 11.26 11.20 10.99 10.66 10.25 9.777 9.359 8.960 8.583 8.190 7.808 7.661 7.515 7.368 7.222 7.075 6.810 6.540 6.220 5.903 5.784 5.334 4.904 4.551 4.219 3.978 3.737 3.519 3.325 3.170 3.048 2.898 2.833 2.709 2.574 2.481 2.408
|S12| 0.0014 0.0028 0.0069 0.014 0.027 0.039 0.051 0.060 0.069 0.077 0.085 0.091 0.096 0.101 0.107 0.113 0.119 0.125 0.127 0.128 0.130 0.132 0.134 0.136 0.139 0.141 0.141 0.142 0.142 0.143 0.142 0.140 0.141 0.136 0.136 0.135 0.133 0.131 0.129
|S22| 0.954 0.954 0.954 0.951 0.938 0.918 0.895 0.867 0.846 0.828 0.815 0.801 0.785 0.784 0.784 0.784 0.783 0.783 0.780 0.774 0.762 0.760 0.758 0.757 0.758 0.757 0.750 0.757 0.766 0.768 0.772 0.772 0.783 0.786 0.795 0.801 0.802 0.805 0.814
-1.0 -2.0
-9.0 -100 -103 -107 -110 -114 -117 -120 -121 -123 -124 -125 -125 -126 -127 -127 -128 -128 -128 (continued)
Power characterization data were measured with resistor shunting MRF134 input port. scattering parameters were measured MRF134 device alone with external components.
Table Common Source Scattering Parameters
MRF134
MOTOROLA DEVICE DATA
PRODUCT TRANSFERRED M/A-COM
-4.0
ARCHIVE INFORMATION
(MHz)
|S11| 0.619 0.617 0.618 0.619 0.618 0.614 0.609 0.562 0.587 0.593 0.597 0.598 0.592 0.588 0.586 0.590 -142 -144 -146 -147 -150 -152 -154 -155 -156 -158 -160 -162 -164 -166 -168 -171 |S21| 2.334 2.259 2.192 2.124 2.061 1.983 1.908 1.877 1.869 1.794 1.749 1.700 1.641 1.590 1.572 1.551
|S12| 0.128 0.125 0.123 0.122 0.120 0.118 0.119 0.118 0.119 0.118 0.119 0.118 0.115 0.112 0.108 0.107
|S22| 0.818 0.824 0.834 0.851 0.859 0.857 0.865 0.872 0.869 0.875 0.881 0.889 0.888 0.877 0.864 0.863
-129 -130
-131 -132 -133 -133 -133 -134 -135 -135 -136 -138 -138 -137 -137
1000
Power characterization data were measured with resistor shunting MRF134 input port. scattering parameters were measurd MRF134 device alone with external components.
Table Common Source Scattering Parameters (continued)
MOTOROLA DEVICE DATA
MRF134
PRODUCT TRANSFERRED M/A-COM
-130
ARCHIVE INFORMATION
+j50 +j25 +j100 +j150 +j10 +j250 +j500
+90° +120° +60° 1000
+150° 180°
+30°
1000
-j500 -j250 -30°
-j10
-j25
-j100
-j150
-150°
ARCHIVE INFORMATION
-120°
-60° -90°
-j50
Figure S11, Input Reflection Coefficient versus Frequency
Figure S12, Reverse Transmission Coefficient versus Frequency
+90° +120° +150° 180°
+j50 +60° +j25 +30° +j100 +j150 +j10 +j250 +j500
1000
-j500 -150° -30° -j10 -j250 1000 -120° -60° -90° -j25 -j100 -j150
-j50
Figure S21, Forward Transmission Coefficient versus Frequency
Figure S22, Output Reflection Coefficient versus Frequency
MRF134
MOTOROLA DEVICE DATA
PRODUCT TRANSFERRED M/A-COM
ARCHIVE INFORMATION
BIAS MRF134 enhancement mode and, therefore, does conduct when drain voltage applied. Drain current flows when positive voltage applied gate. Figure typical plot drain current versus gate voltage. power FETs require forward bias optimum performance. value quiescent drain current (IDQ) critical many applications. MRF134 characterized which suggested minimum value IDQ. special applications such linear amplification, have selected optimize critical parameters. gate open circuit draws current. Therefore, gate bias circuit generally just simple resistive divider network. Some special applications require more elaborate bias system.
AMPLIFIER DESIGN Impedance matching networks similar those used with bipolar transistors suitable MRF134. Motorola Application Note AN721, Impedance Matching Networks Applied Power Transistors. higher input impedance FETs helps ease task broadband network design. Both small signal scattering parameters large signal impedances provided. While s-parameters will produce exact design solution high power operation, they yield good first approximation. This additional advantage power FETs. power FETs triode devices and, therefore, unilateral. This, coupled with very high gain MRF134, yields device capable self oscillation. Stability achieved techniques such drain loading, input shunt resistive loading, output input feedback. MRF134 characterized with 68-ohm input shunt loading resistor. port parameter stability analysis with MRF134 s-parameters provides useful-tool selection loading feedback circuitry assure stable operation. Motorola Application Note AN215A discussion port network theory stability. Input resistive loading feasible noise applications. MRF134 noise figure data generated circuit with drain loading loss input network.
MOTOROLA DEVICE DATA
MRF134
PRODUCT TRANSFERRED M/A-COM
DESIGN CONSIDERATIONS MRF134 power N-Channel enhancement mode field-effect transistor (FET) designed especially power amplifier oscillator applications. Motorola FETs feature vertical structure with planar design, thus avoiding processing difficulties associated with V-groove vertical power FETs. Motorola Application Note AN-211A, FETs Theory Practice, suggested reading those familiar with construction characteristics FETs. major advantages power FETs include high gain, noise, simple bias systems, relative immunity from thermal runaway, ability withstand severely mismatched loads without suffering damage. Power output varied over wide range with power control signal, thus facilitating manual gain control, modulation.
GAIN CONTROL Power output MRF134 controlled from rated value down zero (negative gain) varying gate voltage. This feature facilitates design manual gain control, AGC/ALC modulation systems. (See Figure
NOTES
MRF134
MOTOROLA DEVICE DATA
NOTES
MOTOROLA DEVICE DATA
MRF134
PACKAGE DIMENSIONS
NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. STYLE SOURCE GATE SOURCE DRAIN INCHES 0.960 0.990 0.370 0.390 0.229 0.281 0.215 0.235 0.085 0.105 0.150 0.108 0.004 0.006 0.395 0.405 0.113 0.130 0.245 0.255 0.790 0.810 0.720 0.730 MILLIMETERS 24.39 25.14 9.40 9.90 5.82 7.13 5.47 5.96 2.16 2.66 3.81 4.57 0.11 0.15 10.04 10.28 2.88 3.30 6.23 6.47 20.07 20.57 18.29 18.54
SEATING PLANE
CASE 211-07 ISSUE
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MRF134
MRF134/D MOTOROLA DEVICE DATA
*MRF134/D*
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