Reliability Quality Report Third Quarter 1996 MICROPROCESSOR MEMO
|
|
|
Top Searches for this datasheet
BR1100/D
Reliability Quality Report Third Quarter 1996
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
QUARTER 1996
MOTOROLA INC., 1996
Valued Customers: Thank You! Thank selecting Motorola your supplier Microprocessor Memory Products. Motorola's Microprocessor Memory Technologies Group (MMTG) dedicated delivering products you, customers, need successful since cannot hope succeed unless succeed. combined success deliver products that high quality they performance. help understand quality reliability products glad present MMTG's Quarterly Reliability Quality Report. Motorola have overriding goal Total Customer Satisfaction. want deliver products need, when need them, made with most appropriate technology available. serve your needs MMTG's technology portfolio extremely broad have products built with technologies ranging from NMOS BiCMOS. Over past several years rate product technology introductions increased substantially, have intention slowing down now. Even though technology products become more complex with each generation, expectations their performance, quality, reliability continue increase. very proud quality reliability products, satisfied with goal products, only appropriate goal, zero defects! hope that find this report useful will remain partner progress into future filled with products ever increasing performance, quality, reliability. Sincerely,
Barry Waite Senior Vice President General Manager Microprocessor Memory Technologies Group Austin, Texas,
Semiconductor Products Sector Microprocessor Memory Technologies Group 6501 William Cannon Drive West, Austin, Texas 78735-8598 (512) 891-2000
Valued Customers: total commitment quality integral part Motorola's culture. That commitment been highlighted publicly many different ways from receiving first annual Malcolm Baldrige National Quality Award 1988 industry leading 6-Sigma Quality Program. However, unseen constant efforts individual Motorolans striving make incremental improvements that drive continuous improvement products' quality reliability. know that your requirements quality reliability products constantly increasing because requirements your customers reliability quality your products also increasing. therefore, engage never ending cycle measuring performance, determining root cause failures that occur, correcting those root causes, then beginning again measure performance. Each quarter share results these continuous improvement efforts this publication. report trends current levels reliability quality broad portfolio Microprocessor Memory products. also include overview reliability quality philosophy, well short sections reliability data analysis process control techniques. This report you, welcome your comments suggestions help improve have attached postage paid Customer Response Form inside cover this report solicit your feedback. Thank choosing Motorola. Sincerely,
Janet Brown Group Director Reliability Quality Assurance Microprocessor Memory Technologies Group Austin, Texas,
Semiconductor Products Sector Microprocessor Memory Technologies Group 6501 William Cannon Drive West, Austin, Texas 78735-8598 (512) 891-2000
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP
WORLD WIDE WORLD CLASS
RELIABILITY QUALITY REPORT
TECHNICAL INFORMATION WORLD-WIDE CUSTOMER SUPPORT FAST STATIC RAMs DYNAMIC RAMs MICROPROCESSOR PRODUCTS QUALITY PRODUCT PORTFOLIO
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Section TECHNICAL INFORMATION
WORLD WIDE WORLD CLASS
RELIABILITY QUALITY PHILOSOPHY RELIABILITY DATA ANALYSIS RELIABILITY STRESS TESTS STATISTICAL PROCESS CONTROL
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA'S RELIABILITY QUALITY PHILOSOPHY
order guarantee that high standards reliability quality required Motorola, ongoing Reliability Audit Program been established. Individual product package monitors generally developed identifying process driver device most cases same device used qualify process product package family). Once process driver device identified, appropriate stress test programs place adequately monitor ongoing process average specific family. This process average measurement made understanding reliability quality results individual samples from production material. These samples pulled outgoing gate portion production flow, then randomly sourced into specified reliability tests. These tests include Early Fail Studies, Dynamic Static Long Term Lifetest (which includes Read Record Parametric Characterization Samples), Temperature Humidity Bias, Pressure Temperature Humidity Bias, Autoclave, Temperature Cycle, well preconditioning stress testing plastic surface mount packaging technology. Monitor testing completed ongoing four week cycle. Test results subsequently made available quarterly cycles. This report details test results received previous quarter, outlining reliability data associated with process package family types. With this data, effective ongoing monitoring method established which capable identifying reliability trends associated with process product package families.
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
RELIABILITY DATA ANALYSIS
Reliability probability that semiconductor device will perform specified function given environment specified period. other words, reliability quality over time environmental conditions. most frequently used reliabiity measure semiconductor devices failure rate failure rate obtained dividing number failures observed product number devices test interval hours, usually expressed percent thousand hours failures billion device hours (FITS). This called point estimate because obtained from observations portion (sample) population devices. project from sample population general, must establish confidence intervals. application confidence intervals statement ``confident'' that sample failure rate approximates that population. obtain failure rates different confidence levels, necessary make specific probability distributions. chi-square distribution that relates observed expected frequencies event frequently used establish confidence intervals. relationship between failure rate chi-square distribution follows: accelerated tests, elevated stresses used produce, short period, same failure mechanisms would observed under normal conditions. objective this testing identify these failure mechanisms eliminate them cause failure during useful life product. Temperature, relative humidity, voltage most frequently used stresses during accelerated testing. Their relationship failure rates been shown follow Eyring type equation form: exp(kT) exp(B/RH) exp(CE) Where constants, more specifically numbers representing apparent energy which various failure mechanisms occur. These called activation energies. ``T'' temperature, ``RH'' relative humidity, ``E'' electric field. most familiar form this equation (shown following page) deals with first exponential term that shows Arrhenius type relationship failure rate versus junction temperature semiconductors. junction temperature related ambient temperature through thermal resistance power dissipation. Thus, test devices near their maximum junction temperatures, analyze failures assure that they types that accelerated temperature then applying known acceleration factors, estimate failure rates lower junction. Figure shows curve that gives estimates typical failure rates versus temperature semiconductors.
where: failure rate chi-square function (100 confidence level) d.f. degrees freedom number failures device hours Chi-square values confidence intervals failures shown Table 1-1. Table Chi-Square Table
Chi-Square Distribution Function Confidence Level Fails Quantity 1.833 4.045 6.211 8.351 10.473 12.584 14.685 16.780 18.868 20.951 23.031 25.106 27.179 Confidence Level Fails Quantity 4.605 7.779 10.645 13.362 15.987 18.549 21.064 23.542 25.989 28.412 30.813 33.196 35.563
CONFIDENCE LEVEL FAILURE 1000 HOURS
0.01
0.001 (1.5) (2.0) (2.5) (3.0) (3.5)
0.0001
failure rate semiconductor devices inherently low. result, industry uses technique called accelerated testing assess reliability semiconductors. During
Figure Typical Failure Rate versus Junction Temperature
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Arrhenius type equation: where:
failure rate constant activation energy Boltzman's constant, 8.62 10-5 e/V/°K temperature degrees Kelvin (TJ°C 273.15)
Temperature acceleration factors particular failure mechanism expressed ratio failure rates different levels stress: exp( acceleration factor activation energy Boltzman's constant, 8.62 10-5 eV/°K junction temperature, rated ambient temperature Since device junction temperature activation energy observed failure mechanisms ``critical'' parameters estimating failure rate, following additional information these parameters presented below. junction temperature, life test ambient temperature Figure example. where:
Circuit performance long-term circuit reliabiity affected temperature. Normally, both improved keeping junction temperatures low. Electrical power dissipated semiconductor device source heat. This heat source increases temperature about some reference point, normally ambient temperature 25°C still air. temperature increase, then, depends amount power dissipated circuit thermal resistance between heat source reference point. temperature junction depends packaging mounting system's ability remove heat generated circuit from junction region ambient environment. basic formula converting power dissipation estimated junction temperature
(JA)
where: maximum junction temperature maximum ambient temperature calculated maximum power dissipation, including effects external loads when applicable average thermal resistance, junction case average thermal resistance, case ambient average thermal resistance, junction ambient This Motorola recommended formula been approved RADC DESC calculating ``practical'' maximum operating junction temperature MIL-M-38510 devices.
(FIT) (FIT) 1200 1400 ACCELERATION FACTOR TESTING TIME (HRS) 167.5°C (TJ)
Figure Example Temperature Acceleration Factor (0.7 Activation Energy)
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
Only terms right side equation varied user, ambient temperature device case- to-ambient thermal resistance, some extent device power dissipation also controlled, under recommended supply voltage loading dictate fixed power dissipation.) Both system flow package mounting technique affect thermal resistance term. essentially independent flow external mounting method, sensitive package material, bonding method, area. applications where case held essentially fixed temperature mounting large temperature controlled heat sink, estimated junction temperature calculated (JC)
permitting corresponding increase power dissipation without exceeding maximum permissible operating junction temperature. thermal resistance values specific packages, Motorola Data Book Design Manual appropriate device family contact your local Motorola sales office.
ACTIVATION ENERGY
Determination activation energies accomplished testing randomly selected samples from same population various stress levels comparing failure rates same failure mechanism. activation energy represented slope curve relating natural logarithm failure rate various stress levels. calculating failure rates, comprehensive method specific activation energy each failure mechanism applicable technology circuit under consideration. common alternative method single activation energy value ``expected'' failure mechanism(s) with lowest activation energy. Table 1-2, following page, shows observed activation energies with reference.
where maximum case temperature other parameters previously defined.
FLOW
flow over packages (due decrease reduces thermal resistance package, therefore
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Table Time Dependent Failure Mechanisms Semiconductor Devices (Applicable Discrete Integrated Circuits)
Device Association Silicon Oxide Silicon-Silicon Oxide Interface Relevant Factors Mobile Ions E/V, Accelerating Factors Typical Activation Energy
Process Surface Charges Inversion, Accumulation
Model Fitch, Peck
Reference
Oxide Pinholes
E/V,
0.7-1.0 (Bipolar) (Bipolar) 0.3-0.4 (MOS) (MOS) (MOS) EPROM Large grain (glassivated) Small grain Cu-Al/Cu-Si- (sputtered)
1984 Hokari, Domangue, Crook, D.L. Gear,
Dielectric Breakdown (TDDB) Charge Loss
E/V,
Metallization
Electromigration
Nanda,
Grain Size
Black, J.R.
Doping
Black, J.R.
Corrosion Chemical Galvanic Electrolytic Bond Other Mechanical Interfaces Various Water Fab, Assembly, Silicon Defects Intermetallic Growth Metal Scratches Mask Defects, etc. Silicon Defects
Contamination
E/V, 0.6-0.7 (for electrolysis) have thresholds
Lycoudes, N.E.
Impurities Bond Strength
(Au/Al) 0.5-0.7
Fitch,
Howes, MMPD
voltage; electric field; temperature; current density; humidity REFERENCE
activation leakage type failures. Fitch, W.T.; Greer, Lycoudes, ``Data Support 0.001%/1000 Hours Plastic I/C's.'' Case study linear product shows 0.914 activation energy which within experimental error activation energies reversible leakage (inversion) failures reported literature. oxide defect failures bipolar structures. This under investigation subsequent information obtained from 1984 Wafer Reliability Symposium, especially bipolar capacitors with silicon nitride dielectric. activation leakage type failures. Peck, D.S.; ``New Concerns About Integrated Circuit Reliability'' 1978 Reliability Physics Symposium. 0.36 dielectric breakdown gate structures. Domangue, Rivera, Shedard, ``Reliability Prediction Using Large Capacitors'', 1984 Reliability Physics Symposium. dielectric breakdown. Crook, D.L.; ``Method Determining Reliability Screens Time Dependent Dielectric Breakdown'', 1979 Reliability Physics Symposium. dielectric breakdown. Hokari, al.; IEDM Technical Digest, 1982. large grain Al-Si (compared line width). Nanda, Vangard, Gj-P; Black, J.R.; ``Electromigration Al-Si Alloy Films'', 1978 Reliability Physics Symposium. Cu-Al small grain (compared line width). Black, J.R.; ``Current Limitation Thin Film Conductor'' 1982 Reliability Physics Symposium. 0.65 corrosion mechanism. Lycoudes, N.E.; ``The Reliability Plastic Microcircuits Moist Environments'', 1978 Solid State Technology. open wires high resistance bonds bond Au-Al intermetallics. Fitch, W.T.; ``Operating Life Junction Temperatures Plastic Encapsulated (1.5 wire)'', unpublished report. assembly related defects. Howes, M.G.; Morgan, D.V.; ``Reliability Degradation, Semiconductor Devices CIrcuits'' John Wiley Sons, 1981. Gear, ``FAMOUS PROM Reliability Studies'', 1976 Reliability Physics Symposium. Black, J.R.: unpublished report. Motorola Memory Products Division; unpublished report.
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
RELIABILITY STRESS TESTS
following summary briefly describes various reliability tests included Motorola reliability monitor program. typically performed minimum maximum temperatures 65°C 150°C duration 1000 cycles. Devices placed fluorocarbon bath cooled minimum specified temperature. After being held cold chamber five minutes, devices transferred adjacent chamber filled with fluorocarbon maximum specified temperature equivalent time. five-minute dwells plus ten-second transitions constitute cycle.
DYNAMIC EARLY FAIL STUDY
This stress performed accelerate infant mortality failure mechanisms, which defects that occur within first year normal device operation. Typical stress temperature 125°C, nominal voltage duration hours. devices used this test sampled directly after standard production final test flow with prior burn-in other prescreening, unless called normal production flow.
TEMPERATURE HUMIDITY BIAS (THB)
This environmental test performed temperature 85°C relative humidity 85%. test designed measure moisture resistance plastic encapsulated circuits. nominal static bias applied device create electrolytic cells necessary accelerate corrosion metalization. Typical stress duration 1008 hours.
DYNAMIC STATIC LONG TERM LIFETEST
Both Dynamic Static Long Term Lifetests performed accelerate failure mechanisms access parametric shifts, which voltage thermally activated. This done through application extreme temperatures biased operating conditions. Typical stress temperature 125°C with bias applied being equal greater than data sheet nominal value. memory devices used long term lifetest sampled from Dynamic Early Fail Study. Testing either performed with dynamic signals applied devices static bias configuration test duration 1008 hours.
PRESSURE TEMPERATURE HUMIDITY BIAS (PTHB)
This Test performed accelerate effects moisture penetration with dominant effect being corrosion. This test detects similar failure mechanisms greatly accelerated rate. Conditions employed during this test temperature 148°C, humidity 90%, psig, nominal static bias voltage. Typical stress duration hours.
PRECONDITIONING STRESS TEMPERATURE CYCLE
This test accelerates effects thermal expansion mismatch among different components within specific packaging system. This test typically performed minimum maximum temperatures 65°C 150°C duration 1000 cycles. During temperature cycle testing, devices inserted into cycling system held cold dwell temperature least minutes. Following this cold dwell, devices heated dwell where they remain another minutes. system employs circulating environment assure rapid stabilization specified temperature. purpose this test simulate shipping, storage, solder attach steps involved mounting reworking surface mount device. preconditioning flow begins with temperature cycles 65°C/150°C) followed moisture soak. soak involve simulating worst case Pack" condition 85°C/85% environment, worst case Pack condition 85°C/60% typical manufacturing environment condition 30°C/60% duration moisture condition will vary depending moisture level tested. Moisture exposure followed multiple passes vapor phase reflow (215°C) seconds pass. This test method meets requirements Jedec A113.
THERMAL SHOCK
objective this test same that Temperature Cycle testing: emphasize differences expansion coefficients components packaging system. However, thermal shock provides additional stress because device exposed sudden change temperature transfer time seconds maximum well increased thermal conductivity liquid ambient. This test
AUTOCLAVE
Autoclave environmental test that measures devices resistance moisture penetration resultant effects galvanic corrosion. Conditions employed during test include 121°C, 100% relative humidity, psig. Corrosion expected failure mechanism. Autoclave highly accelerated destructive test. Typical test duration hours.
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
STATISTICAL PROCESS CONTROL
Motorola's Microprocessor Memory Technologies Group continually pursuing ways improve product quality. Initial design improvement method that used produce superior product. Equally important outgoing product quality ability produce product that consistently conforms specification. Process variability basic enemy semiconductor manufacturing since leads product variability. Used phases Motorola's product manufacturing, STATISTICAL PROCESS CONTROL (SPC) replaces variability with predictability. traditional philosophy semiconductor industry been adherence data sheet specification. Using methods ensures that product will meet specific process requirements throughout manufacturing cycle. emphasis defect prevention, detection. Predictability through methods requires manufacturing culture focus constant permanent improvements. Usually, these improvements cannot bought with state-of-the-art equipment automated factories. With quality design, process, material selection, coupled with manufacturing predictability, Motorola produces world class products. immediate effect manufacturing predictability through process controls. Product centered distributed well within product specification benefits Motorola with fewer rejects, improved yields, lower cost. direct benefit Motorola's customers includes better incoming quality levels, less inspection time, ship-to-stock capability. Circuit performance often dependent cumulative effect component variability. Tightly controlled component distributions give customer greater circuit predictability. Many customers also converting just-in-time (JIT) delivery programs. These programs require improvements cycle time yield predictability achievable only through techniques. benefit derived from helps manufacturer meet customer's expectations higher quality lower cost product. Ultimately, Motorola will have Sigma capability products. This means parametric distributions will centered within specification limits, with product distribution plus minus Sigma about mean. Sigma capability, shown graphically Figure 1-3, details benefit terms yield outgoing quality levels. This compares centered distribution versus sigma worst case distribution shift. product development Motorola requires more robust design features that make them less sensitive minor variations processing. These features make implementation much easier. complete commitment present throughout Motorola. managers, engineers, production operators, supervisors, maintenance personnel have received multiple training courses techniques. Manufacturing identified wafer processing assembly steps considered critical processing semiconductor products. Processes controlled methods that have shown significant improvement diffusion, photolithography, metallization areas. better understand principles, brief explanations have been provided. These cover process capability, implementation, use.
PROCESS CAPABILITY
Standard Deviations From Mean Distribution Centered 2700 defective 99.73% yield defective 99.9937% yield 0.57 defective 99.999943% yield 0.002 defective 99.9999998% yield Distribution Shifted 66810 defective 93.32% yield 6210 defective 99.379% yield defective 99.9767% yield defective 99.99966% yield
Figure AOQL Yield from Normal Distribution Product With Capability goal ensure process CAPABLE. Process capability measurement process produce products consistently specification requirements. purpose process capability study separate inherent RANDOM VARIABILITY from ASSIGNABLE CAUSES. Once completed, steps taken identify eliminate most significant assignable causes. Random variability generally present system does fluctuate. Sometimes, random variability basic limitations associated with machinery, materials, personnel skills, manufacturing methods. Assignable cause inconsistencies relate time variations yield, performance, reliability. Traditionally, assignable causes appear random lack close examination analysis. Figure shows impact predictability that assignable cause have. Figure shows difference between process control process capability. process capability study involves taking periodic samples from process under controlled conditions. performance characteristics these samples charted against time. time, assignable causes identified engineered out. Careful documentation process accurate diagnosis successful removal assignable causes. Sometimes, assignable causes will remain unclear, requiring prolonged experimentation. Elements which measure process variation control capability Cpk, respectively. specification width divided process width (specification width) absolute value closest specification value mean, minus mean, divided half process width closest specification X/3.
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
PREDICTION control assignable causes eliminated TIME TIME SIZE control (assignable causes present) SIZE
Process "under control" assignable causes removed future distribution predictable.
PREDICTION
Lower Specification Limit
Upper Specification Limit
TIME control capable (variation from random variability reduced)
TIME SIZE
SIZE
control capable (variation from random variability excessive)
Figure Impact Assignable Causes Process Predictable
Figure Difference Between Process Control Process Capability
Motorola, critical parameters, process capability acceptable with 1.33. desired process capability ideal Cpk, definition, shows where current production process fits with relationship specification limits. center distributions excessive process variability will result less than optimum conditions.
IMPLEMENTATION
MMTG uses many parameters that show conformance specification. Some parameters sensitive process variations while others remain constant given product line. Often, specific parameters influenced when changes other parameters occur. both impractical unnecessary monitor parameters using methods. Only critical parameters that sensitive process variability chosen monitoring. process steps affecting these critical parameters must identified well. equally important find measurement these process steps that correlates with product performance. This measurement called critical process parameter. Once critical process parameters selected, sample plan must determined. samples used measurement organized into RATIONAL SUBGROUPS approximately five pieces. subgroup size should such that variation among samples within subgroup remain small. samples must come from same source e.g., same mold press operator, etc. Subgroup data should
collected appropriate time intervals detect variations process. process begins show improved stability, interval increased. data collected must carefully documented maintained later correlation. Examples common documentation entries operator, machine, time, settings, product type, etc. Once plan established, data collection begin. data collected with generate values that plotted with respect time. refers mean values within given subgroup, while range greatest value minus least value. When approximately more values have been generated, average these values computed follows: .)/K .)/K where number subgroups measured. values used create process control chart. Control charts primary tool used signal problem. Shown Figure 1-6, process control charts show values with respect time concerning reference upper lower control limit values. Control limits computed follows: upper control limit UCLR lower control limit LCLR upper control limit UCLX lower control limit
MOTOROLA 1-10
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
148.0 150.4 152.8
Where constants varying sample size, with values sample sizes from shown following partial table:
3.27 1.88 2.57 1.02 2.28 0.73 2.11 0.58 2.00 0.48 1.92 0.08 0.42 1.86 0.14 0.37 1.82 0.18 0.34 1.78 0.22 0.31
*For sample sizes below LCLR would technically negative number; those cases there lower control limit; this means that subgroup size ``identical'' measurements would unreasonable.
Control charts used monitor variability critical process parameters. chart shows basic problems with piece piece variability related process. chart often identify changes people, machines, methods, etc. source variability difficult find require experimental design techniques identify assignable causes. Some general rules have been established help determine when process OUT-OF-CONTROL. Figure shows control chart subdivided into zones corresponding sigma, sigma, sigma limits respectively. Figures through 1-11 four tests that used identify excessive variability presence assignable causes shown. familiarity with given process increases, more subtle tests employed successfully. Once variability identified, cause variability must determined. Normally, only factors have significant impact total variability process. importance correctly identifying these factors stressed following example. Suppose process variability depends
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Figure Example Process Control Chart Showing Oven Temperature Data
variance five factors Each variance 0.4, respectively. SInce: +(0.4)2
only identified eliminated, then: (0.4)2
This results less than total variability improvement. were eliminated, then: (0.4)2 5.02
This gives considerably better improvement 23%. only identified reduced from then: (0.4)2
Identifying improving variability from yields total variability improvement nearly 40%. Most techniques employed identify primary assignable cause(s). Out-of-control conditions correlated documented process changes. product analyzed detail using best versus worst part comparisons Product Analysis equipment. Multi-variance analysis used determine family variation (positional, critical, temporal). Lastly, experiments test theoretical factorial analysis. Whatever method used, assignable causes must identified eliminated most expeditious manner possible.
MOTOROLA 1-11
ZONE SIGMA) ZONE SIGMA) ZONE SIGMA) ZONE SIGMA) ZONE SIGMA) ZONE SIGMA) CENTERLINE
Figure Control Chart Zones
Figure Point Outside Control Limit Indicating Excessive Variability
Figure Three Points Zone Beyond Indicating Excessive Variability
Figure 1-10 Four Five Points Zone Beyond Indicating Excessive Variability
Figure 1-11 Seven Eight Points Zone Beyond Indicating Excessive Variability
After assignable causes have been eliminated, control limits calculated provide more challenging variability criteria process. yields variability improve, become more difficult detect improvements because they become much smaller. When assignable causes have been eliminated points remain within control limits groups, process said state control.
SUMMARY
Motorola committed STATISTICAL PROCESS CONTROLS. These principles, used throughout manufacturing have already resulted many significant improvements processes. Continued dedication culture will allow Motorola reach Sigma zero defect capability goals. will further enhance commitment TOTAL CUSTOMER SATISFACTION.
MOTOROLA 1-12
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Section WORLD WIDE CUSTOMER SUPPORT
WORLD WIDE WORLD CLASS
WORLD WIDE SERVICE CENTERS CAPABILITIES CHART REGION
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
CUSTOMER FAILURE ANALYSIS SUPPORT WORLD WIDE
following chart show location worldwide MMTG support facilities outline customer return failure analysis support status each these facilities. While each facility supports customers located immediate region, facilities work together produce detailed accurate analyses. seen chart, offshore locations have some level test physical failure analysis capabiities. These capabilities continually increasing. North American support site Austin, Texas, fully resourced comprehensive, detailed electrical physical analysis Memory products most High Performance RISC MPUs. addition local customer return analysis, Austin facility provides expert analysis assistance offshore regions through technical information data communications well electrical physical analysis most difficult offshore returns.
EUROPE East Kilbride NORTH AMERICA Austin JAPAN Sendai
HONG KONG
ASIA PACIFIC Kuala Lumpur
WORLD WIDE SERVICE CENTERS
NORTH AMERICA Semiconductor Sales Office 11120 Metric Blvd. Austin, 78758 Memories Most MPUs ASIA PACIFIC Motorola Malaysia SDU. BHD. Jalan 47300 Petaling Jaya Selangor, Malaysia Memories EUROPE Motorola Colvilles Road Kelvin Industrial Estate UK-East Kilbride Glasgow, Memories Some MPUs
JAPAN Nippon Motorola LTD. (NML) 3-2-1, Akedori, Izumi-Ku, Sendai-Shi 981-31, Japan Memories Some MPUs
HONG KONG Motorola Semiconductors Hong Kong Ltd. King Street Industrial Estate, Hong Kong Some MPUs
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
FAILURE ANALYSIS CAPABILITIES REGION
Customer Electrical Test Analysis
North America Austin, Texas Dedicated Teradyne Testers Electrical Verification Characterization Memories Dedicated DRAM FSRAM Engineers Failure Analysis Engineers Perform Electrical Device Investigation Production Testers Available Correlation Activities Memories Most MPUs Additional Design Engineering Analysis Required Chip Package Areas Dedicated DRAM FSRAM Failure Analysis Engineers Complete Electrical Verification Bench Equipment Full Deprocessing E-Beam Testing Emission Microscopy SEM/EDS TEM, Auger, SIMS, ESCA Acoustic Microscopies Additional Diagnostic Analysis Required
Japan Sendai, Japan Dedicated Teradyne Testers Electrical Verification Characterization Some Memories Failure Analysis Engineers Perform Electrical Test Verification
Europe East Kilbride, Scotland Dedicated Teradyne Testers Electrical Verification Characterization Some Memories Failure Analysis Engineers Perform Electrical Test Verification
Asia/Pacific Kuala Lumpur, Malaysia Dedicated Teradyne Testers Electrical Verification Characterization Memories Failure Analysis Engineers Perform Electrical Test Verification
Hong Kong
Failure Analysis Engineers Perform Electrical Test Verification
Production Testers Available Correlation Activities Most MPUs
Production Testers Available Correlation Activities Memories Most MPUs
Production Testers Available Correlation Activities Some MPUs
Physical Test Analysis
Chip Package Areas Shared Failure Analysis Engineers Electrical Verification Bench Equipment Deprocessing E-Beam Testing Emission Microscopy SEM/EDS Acoustic Microscopies
Chip Package Areas Dedicated Failure Analysis Engineers Electrical Verification Bench Equipment Deprocessing Emission Microscopy SEM/EDS Acoustic Microscopies
Package Area Dedicated Failure Analysis Engineers Electrical Verification Bench Equipment Deprocessing Emission Microscopy SEM/EDS Acoustic Microscopies
Package Area Dedicated Failure Analysis Engineers Electrical Verification Bench Equipment Deprocessing Emission Microscopy SEM/EDS Acoustic Microscopies
NOTE: World Wide Failure Analysis Labs linked together with Motorola's Peer-to-Peer Network instantaneous data transmission.
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Section FAST STATIC RAMs
WORLD WIDE WORLD CLASS
BiCMOS PROCESS MONITORS
0.8µ Double Level Metal BiCMOS Process 256K Density Process 0.8µ Double Level Metal BiCMOS Process Density Process 0.5µ Double Level Metal BiCMOS Process Density Process Density Process 3-10
CMOS PROCESS MONITORS
0.8µ Double Level Metal CMOS Process Density Process 3-13 0.65µ Double Level Metal CMOS Process 256K Density Process 3-15 0.5µ Double Level Metal CMOS Process 256K Density Process 3-18 Density Process 3-21 Density Process 3-24
PACKAGE MONITORS
mil, Plastic Package 3-27 mil, Plastic Package 3-30 Plastic Leaded Chip Carrier Package 3-33 Modules 3-35
TECHNOLOGY DRAWINGS 3-37
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT MOTOROLA
Case
Case 710A
Case 710B
Case
Case 724A
Case 736A
Case
Case
Case
Case
Case 810A
Case 810B
Case
Case
East Kilbride Anam Tokyo Mesa Austin Kuala Lumpur
Penang
Anam, Korea Austin, Texas East Kilbride, Scotland
Kuala Lumpur, Malaysia Mesa, Arizona Penang, Malaysia Tokyo, Japan
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
BiCMOS PROCESS MONITORS
0.8µ Double Level Metal, BiCMOS FSRAM Process 256K Density Process Applicable Devices:
Part Number
MCM6706A MCM6708A MCM6709A MCM6705 MCM6706R MCM6709R
Organization
Speed
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
0.8µ Double Level Metal, BiCMOS FSRAM Process 256K Density Process (cont.) Dynamic Early Fail Study 125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1995 Last Quarters
0/883 0/883
Dynamic Early Fail Study Results Quarter
5000
4000
3000 FAIL 2000 1000 4Q95 MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.8µ Double Level Metal, BiCMOS FSRAM Process 256K Density Process (cont.) Dynamic Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1996 Last Quarters
0/130 0/127 0/257
131040 128016 259056
Static Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1996 Last Quarters
0/128 0/126 0/254
129024 127008 256032
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
BiCMOS PROCESS MONITORS
0.8µ Double Level Metal, BiCMOS FSRAM Process Density Process Applicable Devices:
Part Number
MCM6726 MCM6727 MCM6728 MCM6729 MCM6726A MCM6728A MCM6729A MCM67B618 MCM67C618 MCM67H618 MCM67J618 MCM67M618 MCM67A618 MCM67D709
Organization
128K 256K 256K 128K 256K 256K 128K
Speed
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.8µ Double Level Metal, BiCMOS FSRAM Process Density Process (cont.) Dynamic Early Fail Study 125°C, volts, Hours/125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/205 0/767 0/1488 0/2460
Dynamic Early Fail Study Results Quarter
5000
4000
3000 FAIL 2000 1000 4Q95 1Q96 2Q96
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
BiCMOS PROCESS MONITORS
0.5µ Double Level Metal, Double Level Poly BiCMOS FSRAM Process Density Process Applicable Devices:
Part Number
MCM6926 MCM6929 MCM69P531 MCM69F536A MCM69F536B MCM69P536A MCM69P536B MCM69F618A MCM69P618A
Organization
128K 256K
Speed
4.5, 8.5, 8.5, 4.5, 4.5, 8.5, 8.5,
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.5µ Double Level Metal, Double Level Poly BiCMOS FSRAM Process Density Process (cont.) Dynamic Early Fail Study 125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Last Quarters
1/2291 1/2291
Analysis
Dynamic Early Fail Study Results Quarter
5000
4000
3000 FAIL 2000 1000 3Q96
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
BiCMOS PROCESS MONITORS
0.5µ Double Level Metal, Double Level Poly BiCMOS FSRAM Process Density Process Applicable Devices:
Part Number
MCM6726B MCM6726C MCM6728B MCM6729B MCM6729C MCM67A618A MCM67B618A MCM67C618A MCM67M618A
Organization
128K 128K 256K 256K 256K
Speed
MOTOROLA 3-10
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.5µ Double Level Metal, Double Level Poly BiCMOS FSRAM Process Density Process (cont.) Dynamic Early Fail Study 125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
1/9927 0/1898 1/2227 2/1777 4/15829
1125
Analysis Foreign Matter Foreign Matter Defect Found
Dynamic Early Fail Study Results Quarter
5000
4000
3000 FAIL 2000 1000 4Q95 1Q96 2Q96 3Q96
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-11
0.5µm Double Level Metal, Double Level Poly BiCMOS FSRAM Process Density Process (cont.) Dynamic Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/623 0/75 0/186 0/64 0/948
313992 75600 187488 64512 641592
Static Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/75 0/261 0/64 0/400
75600 263088 64512 403200
Rate Derating Graph Users Voltage Temperature Most Recent Quarter
Dynamic Long Term Lifetest
FITS C.L. USERS TEMPERATURE (CELSIUS) 4.50 5.00 5.50
MOTOROLA 3-12
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
CMOS PROCESS MONITORS
0.8µ Double Level Metal CMOS FSRAM Process Density Process Applicable Devices:
Part Number
MCM6226 MCM6226A MCM6227A MCM6229 MCM6229A
Organization
128K 128K 256K 256K
Speed
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-13
0.8µ Double Level Metal CMOS FSRAM Process Density Process (cont.) Dynamic Early Fail Study 125°C, volts, Hours/125°C, volts, Hours/125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1995 Last Quarters
0/575 0/45 0/620
Dynamic Early Fail Study Results Quarter
5000
4000
3000 FAIL 2000 1000 4Q95 1Q96 MOTOROLA 3-14
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
CMOS PROCESS MONITORS
0.65µ Double Level Metal CMOS FSRAM Process 256K Density Process Applicable Devices:
Part Number
MCM6205D MCM6206D MCM62486B MCM62940B
Organization
Speed
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-15
0.65µ Double Level Metal CMOS FSRAM Process 256K Density Process (cont.) Dynamic Early Fail Study 125°C, volts, Hours/125°C, volts, Hours/125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/390 0/208 0/2600 0/156 0/3354
Dynamic Early Fail Study Results Quarter
5000
4000
3000 FAIL 2000 1000 4Q95 1Q96 2Q96 3Q96 MOTOROLA 3-16
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.65µ Double Level Metal CMOS FSRAM Process 256K Density Process (cont.) Dynamic Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1996 Last Quarters
0/91 0/78 0/169
91728 78624 170352
Static Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1996 Last Quarters
0/91 0/78 0/169
91728 78624 170352
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-17
CMOS PROCESS MONITORS
0.5µ Double Level Metal CMOS FSRAM Process 256K Density Process Applicable Devices:
Part Number
MCM6206BA
Organization
Speed
MOTOROLA 3-18
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.5µ Double Level Metal CMOS FSRAM Process 256K Density Process (cont.) Dynamic Early Fail Study 125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1995 Last Quarters
0/235 0/235
Dynamic Early Fail Study Results Quarter
5000
4000
3000 FAIL 2000 1000 4Q95
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-19
0.5µ Double Level Metal, Double Level Poly CMOS FSRAM Process 256K Density Process (cont.) Dynamic Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1995 Last Quarters
0/247 0/247
248976 248976
Static Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1995 Last Quarters
0/252 0/252
254016 254016
MOTOROLA 3-20
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
CMOS PROCESS MONITORS
0.5µ Double Level Metal CMOS FSRAM Process Density Process Applicable Devices:
Part Number
MCM6226B MCM6227B MCM6229B MCM6226BB MCM6229BB
Organization
128K 256K 128K 256K
Speed
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-21
0.5µ Double Level Metal CMOS FSRAM Process Density Process (cont.) Dynamic Early Fail Study 125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
4/2433 0/161 5/2877 9/5521
1644 1738 1630
Analysis Defect Found
Dynamic Early Fail Study Results Quarter
6000
5000
4000
3000 FAIL 2000 1000
4Q95
1Q96
2Q96
MOTOROLA 3-22
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.5µ Double Level Metal, Double Level Poly CMOS FSRAM Process Density Process (cont.) Dynamic Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1995 Last Quarters
0/213 0/288 0/501
214703 290304 505008
Static Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1995 Last Quarters
0/115 0/265 0/380
115920 267120 383040
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-23
CMOS PROCESS MONITORS
0.5µ Double Level Metal CMOS FSRAM Process Density Process Applicable Devices:
Part Number
MCM6246 MCM6249
Organization
512K
Speed
MOTOROLA 3-24
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.5µ Double Level Metal CMOS FSRAM Process Density Process (cont.) Dynamic Early Fail Study 125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/50 1/1412 0/176 0/211 1/1849
Defect Found
Dynamic Early Fail Study Results Quarter
5000
4000
3000 FAIL 2000 1000
4Q95
1Q96
2Q96
3Q96
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-25
0.5µ Double Level Metal CMOS FSRAM Process Density Process (cont.) Dynamic Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/148 0/60 0/60 0/70 0/338
149184 60480 60480 70560 340704
Static Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/148 0/60 0/60 0/70 0/338
149184 60480 60480 70560 340704
Rate Derating Graph Users Voltage Temperature Most Recent Quarter
Dynamic Long Term Lifetest
FITS C.L. 4.50 5.00 5.50 USERS TEMPERATURE (CELSIUS) FITS C.L. USERS TEMPERATURE (CELSIUS)
Static Long Term Lifetest
MOTOROLA 3-26
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
PACKAGE MONITORS
mil, Plastic Package Applicable Devices:
Part Number
MCM4180 MCM6205 MCM6206 MCM6207 MCM6208 MCM6209 MCM62350 MCM62351 MCM6264 MCM6268 MCM6269 MCM6270 MCM6287 MCM6288 MCM6290 MCM6705A MCM6706A MCM6708A MCM6709A
Package Width Count
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-27
mil, Plastic Package
Preconditioning Stress Temperature Cycle (-65 +150°C, Cycles) Bake (125°C, Hrs) Temperature Humidity Soak (85°C, Hrs) Vapor Phase (215°C, seconds, Passes)
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1995 Last Quarters
0/845 0/300 0/1145
Pressure Temperature Humidity Bias 148°C, psig,
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1995 Last Quarters
0/60 0/60
Temperature Humidity Bias 85°C, 1008 Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1995 Last Quarters
0/150 0/60 0/210
NOTE: above package stresses sourced from preconditioning stress samples.
MOTOROLA 3-28
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
mil, Plastic Package (cont.)
Temperature Cycle 150°C, Air, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1995 Last Quarters
0/144 0/60 0/204
Thermal Shock 150°C, Liquid Liquid, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1995 Last Quarters
0/45 0/45
Autoclave 121°C, psig, 100%
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1995 Last Quarters
0/60 0/60
NOTE: above package stresses sourced from preconditioning stress samples.
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-29
PACKAGE MONITORS
mil, Plastic Package Applicable Devices:
Part Number
MCM6226 MCM6229 MCM6206 MCM6264 MCM6293 MCM6294 MCM6295 MCM6726 MCM6727 MCM6728 MCM6729
Package Width Count
MOTOROLA 3-30
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
mil, Plastic Package
Preconditioning Stress Temperature Cycle (-65 +150°C, Cycles) Bake (125°C, Hrs) Temperature Humidity Soak (85°C, Hrs) Vapor Phase (215°C, seconds, Passes)
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/395 0/30 0/137 0/731 0/1293
Pressure Temperature Humidity Bias 148°C, psig,
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/56 0/30 0/15 0/101
Temperature Humidity Bias 85°C, 1008 Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/148 0/45 0/27 0/220
NOTE: above package stresses sourced from preconditioning stress samples.
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-31
mil, Plastic Package (cont.)
Temperature Cycle 150°C, Air, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/56 0/72 0/135 0/263
Thermal Shock 150°C, Liquid Liquid, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/56 0/60 0/132 0/248
Autoclave 121°C, psig, 100%
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1995 Last Quarters
0/101 0/117 0/218
NOTE: above package stresses sourced from preconditioning stress samples.
MOTOROLA 3-32
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
PACKAGE MONITORS
Plastic Leaded Chip Carrier Package Applicable Devices:
Part Number
MCM56824A MCM62110 MCM62486A MCM62820A MCM62940A MCM62950A MCM62963A MCM62973A MCM62974A MCM62975A MCM62990A MCM62995A MCM67B618 MCM67C618 MCM67H618 MCM67J618 MCM67M618 MCM67A618 MCM67D709
Package Width Count
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-33
Plastic Leaded Chip Carrier Package
Preconditioning Stress 30°C, Hrs, Vapor Phase (215°C) Passes
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/230 0/210 0/207 0/180 0/827
Pressure Temperature Humidity Bias 148°C, psig,
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1995 Last Quarters
0/46 0/60 0/106
Temperature Cycle 150°C, Air, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/46 0/45 0/60 0/151
Thermal Shock 150°C, Liquid Liquid, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/105 0/45 0/60 0/210
Autoclave 121°C, psig, 100%
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Last Quarters
0/45 0/45
NOTE: above PLCC package stresses sourced from preconditioning stress samples.
MOTOROLA 3-34
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
PACKAGE MONITORS
Modules Applicable Devices:
Part Number
MCM72MS32 MCM72MS64 MCM4464 MCM44256 MCM32257 MCM32128 MCM3264A MCM32A32 MCM32A64 MCM32Ax32 MCM32Ax64 MCM32Ax128 MCM64AA32 MCM72BA32 MCM72BA64 MCM64BA32 MCM72BB32 MCM72BB64
Package Width Count
DIMM DIMM SIMM SIMM SIMM, DIMM DIMM Card Edge Connector Card Edge Connector Card Edge Connector DIMM DIMM DIMM Card Edge Connector Card Edge Connector Card Edge Connector
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-35
Modules
Temperature Humidity Bias 85°C,
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/49 0/22 0/71 0/94 0/236
Thermal Shock 125°C, Liquid Liquid, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/22 0/22 0/66 0/22 0/132
Flex Test Flexes Side, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/15 0/30
Temperature Cycle 100°C, Air, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/22 0/22 0/66 0/22 0/132
MOTOROLA 3-36
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
TECHNOLOGY DRAWINGS
Double Level Metal Double Level Poly 0.8µ 1.0µ CMOS FSRAM Technology
Double Level Metal, Double Level Poly 0.8µ BiCMOS FSRAM Technology
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 3-37
MOTOROLA 3-38
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Section DYNAMIC RAMs
WORLD WIDE WORLD CLASS
PROCESS MONITORS
MEGABIT DRAM 0.7µ Single Level Metal, Triple Level Poly CMOS DRAM Process MEGABIT DRAM 0.5µ Double Level Metal, Triple Level Poly CMOS DRAM Process
PACKAGE MONITORS
MEGABIT DRAM 20/26 Plastic Package MEGABIT DRAM Plastic Package 4-11 MEGABIT DRAM 24/28 Plastic Package 4-13 DRAM MODULE Module 4-15
TECHNOLOGY DRAWING 4-17
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
Case
Case
Case 810C
East Kilbride Sendai Aizu Oita Mesa Austin Kuala Lumpur
Aizu, Japan Austin, Texas East Kilbride, Scotland Kuala Lumpur, Malaysia
Mesa, Arizona Oita, Japan Sendai, Japan
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
PROCESS MONITORS MEGABIT DRAM
0.7µ Single Level Metal, Triple Level Poly CMOS DRAM Process
Part Number
MCM54100A MCM54400A MCM54800A
Organization
Page Mode Page Mode 512K Page Mode
Speed
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
0.7µ Single Level Metal, Triple Level Poly CMOS DRAM Process (cont.) Dynamic Early Fail Study 125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/9766 0/12382 0/4339 0/14551 0/41038
Dynamic Early Fail Study Results Quarter
5000
4000
3000 FAIL 2000 1000
4Q95
1Q96
2Q96
3Q96
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.7µ Single Level Metal, Triple Level Poly CMOS DRAM Process (cont.) Dynamic Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/650 0/750 0/600 0/924 0/2924
655200 756000 604800 931392 2947392
Static Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/650 0/750 0/600 0/1025 0/3025
655200 756000 604800 1033200 3049200
Rate Derating Graph Users Voltage Temperature Most Recent Quarter
Dynamic Long Term Lifetest
FITS C.L. 4.50 5.00 5.50 USERS TEMPERATURE (CELSIUS) FITS C.L. USERS TEMPERATURE (CELSIUS)
Static Long Term Lifetest
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
PROCESS MONITORS MEGABIT DRAM
0.5µ Double Level Metal, Triple Level Poly CMOS DRAM Process
Part Number
MCM517400B
Organization
Page Mode Extended Data
Speed
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.5µ Double Level Metal, Triple Level Poly CMOS DRAM Process (cont.) Dynamic Early Fail Study 125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
3/2952 0/2958 3/7459 0/1534 6/14903
1016
Analysis Defect Found
Dynamic Early Fail Study Results Quarter
5000
4000
3000 FAIL 2000 1000
4Q95
1Q96
2Q96
3Q96
NOTE: data 1995 product. monitor been converted next generation starting first quarter 1996.
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
0.5µ Double Level Metal, Triple Level Poly CMOS DRAM Process (cont.) Dynamic Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1995 Last Quarters
0/150 0/150
151200 151200
Static Long Term Lifetest 125°C, volts, 1008 Hours
Time Period Results: Rejects/Devices Total Device Hours (eV) Reject Information
Quarter 1995 Last Quarters
0/150 0/150
151200 151200
Rate Derating Graph Users Voltage Temperature Most Recent Quarter
Dynamic Long Term Lifetest
FITS C.L. 4.50 5.00 5.50 USERS TEMPERATURE (CELSIUS) FITS C.L. USERS TEMPERATURE (CELSIUS)
Static Long Term Lifetest
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
PACKAGE MONITORS MEGABIT DRAM
mil, 20/26 Plastic Package Applicable Devices:
Part Number
MCM54100A MCM54400A
Package Width Count
20/26 20/26
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
MEGABIT DRAM mil, 20/26 Plastic Package Preconditioning Stress 30°C, Hrs, Vapor Phase (215°C) Passes
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/924 0/925 0/350 0/2020 0/4219
Pressure Temperature Humidity Bias 148°C, psig,
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/200 0/71 0/100 0/350 0/721
Temperature Cycle 150°C, Air, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/200 0/75 0/100 0/300 0/675
Thermal Shock (Moist 150°C, Liquid Liquid, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/100 0/40 0/50 0/223 0/413
NOTE: package stresses sourced from 30/60 preconditioned material.
MOTOROLA 4-10
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
PACKAGE MONITORS MEGABIT DRAM
mil, Plastic Package Applicable Devices:
Part Number
MCM54800A
Package Width Count
Product life, monitor will ceased after third quarter 1996.
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 4-11
MEGABIT DRAM mil, Plastic Package Preconditioning Stress 30°C, Hrs, Vapor Phase (215°C) Passes
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/1006 0/700 0/1400 0/3106
Pressure Temperature Humidity Bias 148°C, psig,
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/50 0/150 0/100 0/150 0/450
Temperature Cycle 150°C, Air, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/50 0/125 0/50 0/200 0/425
Thermal Shock (Moist 150°C, Liquid Liquid, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/50 0/25 0/75 0/156
NOTE: package stresses sourced from 30/60 preconditioned material.
MOTOROLA 4-12
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
PACKAGE MONITORS MEGABIT DRAM
mil, 24/28 Plastic Package Applicable Devices:
Part Number
MCM517400
Package Width Count
24/28
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 4-13
MEGABIT DRAM mil, 24/28 Plastic Package Preconditioning Stress 85°C, Hrs, Vapor Phase (215°C) Passes
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1995 Last Quarters
0/400 0/400
Pressure Temperature Humidity Bias 148°C, psig,
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1995 Last Quarters
0/75 0/75
Temperature Cycle 150°C, Air, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1995 Last Quarters
0/50 0/50
Thermal Shock (Moist 150°C, Liquid Liquid, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1995 Last Quarters
0/75 0/75
NOTE: package stresses sourced from 85/60 preconditioned material.
MOTOROLA 4-14
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
PACKAGE MONITORS DRAM MODULES
following monitor results determined stressing modules representative possible product families SIMM DIMM).
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 4-15
DRAM MODULE MONITOR Temperature Cycle 125°C, Air, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Last Quarters
0/44 0/44 0/44 0/132
Temperature Humidity Bias 85°C,
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Last Quarters
1/44 0/44 0/44 1/132
22727 7576
Defective Capacitor
Flex Test 7.88" Flexes Side, Cycles
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Last Quarters
0/10 0/20 0/20 0/50
Variable Frequency Vibration 20g, 2000 Cycles Axis
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Last Quarters
0/10 0/20 0/20 0/50
MOTOROLA 4-16
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
TECHNOLOGY DRAWINGS
(WL) POLY (CAP.) POLYCIDE (BL) POLY (WL)
p-WELL p-SUBSTRATE
0.7µ Single Level Metal, Triple Level Poly CMOS DRAM Process
0.5µ Double Level Metal, Triple Level Poly CMOS DRAM Process
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 4-17
MOTOROLA 4-18
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Section MICROPROCESSOR PRODUCTS
WORLD WIDE WORLD CLASS
PROCESS MONITORS
PROCESS FAMILY PROCESS FAMILY 0.65 PROCESS FAMILY 5-11 PROCESS FAMILY 5-15 0.35 PROCESS FAMILY 5-19
PACKAGES
CBGA (RS, 5-22 CQFP (FE, 5-26 CPGA (R/RC) 5-30 PBGA (ZP) 5-32 PQFP (FC/FG/FT/PB) 5-34 TQFP (PV) 5-37 PLCC (FN) 5-39 PDIP 5-42 PPGA (RP) 5-44
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
Plastic Quad (Gull Wing)
Ceramic Quad (Gull Wing)
Plastic Quad Flat Pack (PQFP)
Plastic Quad Pack (PLCC)
Plastic Flat Pack
Plastic Quad Flat Pack
Ceramic with Ceramic
Thin Quad Flat Pack
Plastic
TQFP
Grid Array, Solder Lead Finish
Grid Array, Gold Lead Finish
Plastic Grid Array
Ball Grid Array, Lead
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
HCMOS PROCESS MONITORS
Applicable Devices:
Part Number
MC68020 MC68030 MC68605 MC68606 MC68824 MC68882 MC68EC000 MC68EC020 MC68HC000/1 MC88100 MC88200
MOS8 MOS8 MOS8 MOS8 MOS8 MOS8
Technology
1.5µ 1.5µ 1.5µ 1.2µ 1.2µ
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
Dynamic Early Fail Study 125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/221 0/668 0/101 0/475 0/1465
Rolling Year Dynamic Early Life Fail Study Results
Past Year
4Q95
1Q96
2Q96
3Q96
Quarter Ending
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
High Temperature Dynamic Operating Life Test 125°C, Volts, 1008 Hours
Time Period Results: Rejects/Devices Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/125 0/97 0/101 0/75 0/398
Failure Rate Calculation Information
Device Hours Number Failures
594000
Rate Derating Graph Users Temperature Last Four Quarters Activation Energy Dynamic Long Term Life Test
FITS C.L. FITS C.L.
AMBIENT TEMPERATURE (CELSIUS)
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
1996: HCMOS Life Test Data
1996 TOTALS K39617 K39609 110542-1 119401-1 106866-1 113460-1 117239-1 113065-1 111336-1 115292-1 68HC000 68HC000 68606 68605 68605 68605 68606 68HC001 68HC000 68882 Device Type Leff MOS8 MOS8 MOS8 MOS8 MOS8 MOS8 Site BUCH BUCH Assy 9616 9605 9515 9543 9507 9531 9539 9528 9527 9529 Date Code 0/1541 0/95 0/96 0/131 0/175 0/175 0/175 0/143 0/217 0/180 0/154 Read Points: Fails/SS 0/990 0/95 0/96 0/30 0/175 0/175 0/175 0/143 0/42 0/30 0/29 0/324 0/48 0/48 0/30 0/25 0/25 0/24 0/23 0/42 0/30 0/29 0/323 0/47 0/48 0/30 0/25 0/25 0/24 0/23 0/42 0/30 0/29 1008
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
HCMOS PROCESS MONITORS
Applicable Devices:
Part Number
MC68030 MC68302 MC68340/9 MC68837 MC68840 MC68EC000 MC68HC000/1 MC88410 XC68306/7 XC68322 XC68341 MC68SEC000
MOS8 MOS8 MOS8 MOS8 MOS8 MOS8 MOS8 MOS8 MOS8 MOS8 MOS8 MOS10
Technology
0.8µ 0.8µ 0.8µ 0.8µ 0.71µ 0.71µ/0.8µ 0.8µ 0.8µ 0.8µ 0.8µ 0.8µ 0.8µ
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
Dynamic Early Fail Study 125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/135 0/150 0/29 0/170 0/484
Rolling Year Dynamic Early Life Fail Study Results
Past Year
4Q95
1Q96
2Q96
3Q96
Quarter Ending
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
High Temperature Dynamic Operating Life Test 125°C, Volts, 1008 Hours
Time Period Results: Rejects/Devices Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/129 0/150 0/29 0/70 0/378
Failure Rate Calculation Information
Device Hours Number Failures
413760
Rate Derating Graph Users Temperature Last Four Quarters Activation Energy Dynamic Long Term Lifetest
FITS C.L. FITS C.L.
AMBIENT TEMPERATURE (CELSIUS)
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
1996: HCMOS Life Test Data
1996 TOTALS 125752-1 119609-9 119609-17 119609-1 117398-1 124134-1 68030 65SEC000 68SEC000 68SEC000 68HC001 68HC000 Device Type Leff MOS8 MS10 MS10 MS10 MOS8 MOS8 Site Assy 9615 9548 9548 9548 9544 9545 Date Code 0/655 0/70 0/65 0/75 0/75 0/154 0/216 Read Points: Fails/SS 0/314 0/70 0/65 0/75 0/75 0/29 0/313 0/69 0/65 0/75 0/75 0/29 0/308 0/64 0/65 0/75 0/75 0/29 1008
MOTOROLA 5-10
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.65 HCMOS PROCESS MONITORS
Applicable Devices:
Part Number
MC68302 MC68302 XC68328 MC68340 MC68340 MC68356 MC68356 MC68360 MC68360 MC68SEC000 MC88110 XC68040/EC040/LC040 SC414310
MOS11 MOS12 MOS8 MOS8 MOS11 MOS11 MOS12 MOS11 MOS8 MOS8 MOS11
Technology
0.65µ 0.65µ 0.65µ 0.65µ 0.65µ 0.65µ 0.65µ 0.65µ 0.65µ 0.65µ 0.65µ 0.65µ 0.65µ
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-11
Dynamic Early Fail Study 125°C, volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
4/3125 0/252 0/321 2/727 6/4425
1280 2751 1356
Function, Passes After Depot, Gate Rupture
Tristate Leak
Rolling Year Dynamic Early Life Fail Study Results
2000 1800 1600 1400 Past Year 1200 1000
4Q95
1Q96
2Q96
3Q96
Quarter Ending
MOTOROLA 5-12
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
High Temperature Dynamic Operating Life Test 125°C, Volts, 1008 Hours
Time Period Results: Rejects/Devices Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
2/897 0/97 0/229 0/464 2/1687
Marginal Idd, Functional
Failure Rate Calculation Information
Device Hours Number Failures
2171352
Rate Derating Graph Users Temperature Last Four Quarters Activation Energy Dynamic Long Term Lifetest
FITS C.L. FITS C.L.
AMBIENT TEMPERATURE (CELSIUS)
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-13
Failure Summary
S39602-2 118814-1 S39601-3 S39601-2 S39601-1 110117-1 1996 TOTALS S39602-2 414310 414310 414310 68328 68328 68328 68356 Device 0.65 Package 168H 1008H 168H 1008H 168H 168H 9625 Rdpt 0/3849 0/80 FUNCTIONAL FAILURE GATE OXIDE RUPTURE FUNCTIONAL FAILURE MARGINAL (1.21MA,SPEC 1.2) FUNCTIONAL FAILURE RECOVERED AFTER DEPOTTING 4/3698 1/80 Failure Mode/Mechanism 0/1235 0/79 2/1223 0/79
1995: 0.65 HCMOS LIFE TEST DATA
S39602-1 118814-1 S39601-5 S39601-4 S39601-3 S39601-2 S39601-1 109693-11 109693-1 110117-1 126353-3 126353-2 126353-1 118466-10 111205-1 109285-1 120798-1 120886-3 109693-19 414310 414310 68328 68328 68328 68328 68328 68SEC000 68SEC000 68356 68360 68360 68360 68356 68356 68340 68302 68PM302 68SEC000 Device Type 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 0.65 Leff MOS8 MOS8 MOS8 MOS8 MOS8 MOS8 MOS8 MS11 MS12 MS11 MS11 MS12 MS11 MOS8 Site CITI CITI CITI Assy 9625 9548 9626 9626 9615 9615 9540 9522 9518 9508 9618 9618 9618 9546 9527 9520 9602 9601 9526 Date Code 0/80 0/93 0/477 0/474 0/478 0/480 0/557 0/75 0/76 0/176 0/76 0/77 0/77 0/77 0/175 0/83 0/84 0/77 0/77 0/80 0/93 0/477 0/473 1/477 0/480 1/557 0/75 0/76 1/27 0/76 0/77 0/77 0/77 0/175 0/83 0/84 0/77 0/77 Read Points: Fails/SS 0/80 0/93 0/79 0/80 0/80 0/75 0/76 0/25 0/76 0/77 0/77 0/77 0/25 0/82 0/77 0/77 0/80 1/93 0/79 0/80 1/80 0/75 0/76 0/25 0/76 0/77 0/77 0/72 0/25 0/75 0/77 0/77 1008
MOTOROLA 5-14
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
HCMOS PROCESS MONITORS
Applicable Devices:
Part Number
PC105 PC106 PC603 PC603 PC603E PC603E MCM602A PC604 XCF5102
MOS11 MOS11 MOS11 MOS13 MOS11 MOS13 MOS11 MOS11 MOS11
Technology
0.5µ 0.5µ 0.5µ 0.5µ 0.5µ 0.5µ 0.5µ 0.5µ 0.5µ
Dynamic Early Fail Study 125°C, Volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
3/3379 2/931 2/2290 3/1632 10/8232
2148 1838 1215
ABIST, DCACHE, Function Function, Gate Defect Poly Defect, Leak EZF, Function
Rolling Year Dynamic Early Life Fail Study Results
5000 4500 4000 3500 Quarter 3000 2500 2000 1500 1000
4Q95
1Q96
2Q96
3Q96
Quarter Ending
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-15
High Temperature Dynamic Operating Life Test 125°C, Volts, 1008 Hours
Time Period Results: Rejects/Devices Reject Information
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
3/839 1/654 2/689 6/2182
Function, Leak Functional EZF, ABIST
Failure Rate Calculation Information
Device Hours Number Failures
3709104
Rate Derating Graph Users Temperature Last Four Quarters Activation Energy Dynamic Long Term Lifetest
1000 FITS C.L. FITS C.L.
AMBIENT TEMPERATURE (CELSIUS)
MOTOROLA 5-16
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
1996: HCMOS LIFE TEST DATA
111263-22 111263-16 111263-6 111263-4 115648-16 115648-15 115648-9 115648-8 115648-2 115648-1 122979-1 126190-2 126190-1 126189-3 126189-2 126189-1 125734-6 125734-4 125734-1 118468-14 118468-13 118468-12 118468-11 118468-9 118468-8 118468-7 118468-6 118468-5 118468-4 120140-16 120140-15 120140-9 120140-8 120140-2 120140-1 122659-16 122659-11 122659-6 122659-1 106917-1 603E 603E 603E 603E 603E 603E 603E 603E 603E 603E 603E 603E 603E Device Type Leff MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS11 MS11 MS11 MS11 MS11 Site Assy 9534 9534 9534 9534 9542 9542 9542 9542 9539 9539 9606 9616 9616 9617 9617 9617 9613 9614 9615 9550 9550 9548 9548 9548 9548 9548 9548 9548 9548 9601 9601 9552 9552 9552 9552 9602 9602 9602 9602 9506 Date Code 0/72 0/72 0/72 0/72 1/320 1/287 0/299 0/96 0/77 0/77 0/77 0/77 0/77 0/221 1/79 1/150 0/355 0/88 0/271 1/93 0/110 0/335 0/336 1/311 0/76 0/76 0/76 0/76 0/48 Read Points: Fails/SS 0/72 0/72 1/47 0/71 0/302 0/80 0/80 0/80 0/81 0/271 0/92 0/110 0/73 0/77 0/77 0/24 0/72 0/71 0/46 0/70 0/79 0/80 0/80 0/80 0/78 1/76 0/92 0/77 0/71 0/72 0/75 1008
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-17
Failure Summary
127050-2 127509-7 127509-4 111263-6 115648-15 115648-8 125734-4 125734-1 118468-9 118468-8 120140-1 1996 TOTALS 126588-3 126588-2 126588-1 127050-3 127050-2 127050-1 R39601 128038-2 128038-1 127509-9 127509-8 127509-7 127509-6 127509-5 127509-4 127509-3 127509-2 127509-1 124607-3 124607-2 124607-1 111263-45 111263-39 111263-35 111263-29 603E 603E 603E 603E 603E 603E 603E 603E 603E 603E 603E 603E 603E 603E 603E MCM603A MCM603A MCM603A Device Type 603E 603E 603E 603E 603E 603E Device Leff MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS13 MS13 MS13 MS13 Package Site ANAM ANAM ANAM Assy 168H 504H 504H 504H 168H 168H 168H 168H 1008H 168H 168H 9626 9615 9615 9619 9619 9620 9626 9626 9626 9625 9625 9625 9625 9625 9625 9625 9625 9625 9608 9608 9608 9536 9536 9536 9536 Date Code Rdpt 7/6600 0/76 0/77 0/77 0/77 1/77 0/77 0/539 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/45 0/45 0/45 0/23 0/48 0/45 0/72 MARGINAL FUNCTIONAL FUNCTIONAL FUNCTIONAL MARGINAL LEAKAGE DCACHE: DEFECT FOUND ABIST: DEFECT FOUND GATE DEFECT FUNCTIONAL FUNCTIONAL LEAKAGE DEFECT POLY/SPACER Read Points: Fails/SS Failure Mode/Mechanism 3/2966 0/76 0/77 0/76 0/67 0/65 0/67 0/77 0/77 1/77 0/77 0/77 1/77 0/77 0/77 0/77 0/22 0/48 0/45 0/72 1/1490 0/77 0/76 0/22 0/48 0/44 0/71 1008
MOTOROLA 5-18
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
0.35 HCMOS PROCESS MONITORS
Applicable Devices:
Part Number
PC603P PC604E
MOS13 MOS13
Technology
0.35µ 0.35µ
Dynamic Early Fail Study 125°C, Volts, Hours
Time Period Results: Rejects/Devices Cumulative Fail Reject Information
Quarter 1996 Quarter 1996 Last Quarters
1/1928 2/2778 3/4706
Functional ICACHE, Blocked Trench Etch
High Temperature Dynamic Operating Life Test 125°C, Volts, 1008 Hours
Time Period Results: Rejects/Devices Reject Information
Quarter 1996 Quarter 1996 Last Quarters
0/185 0/894 0/1079
Failure Rate Calculation Information
Device Hours Number Failures
1697640
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-19
Rate Derating Graph Users Temperature Last Four Quarters Activation Energy Dynamic Long Term Lifetest
1000 FITS C.L. FITS C.L.
AMBIENT TEMPERATURE (CELSIUS)
MOTOROLA 5-20
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Failure Summary 1996: 0.35 HCMOS LIFE TEST DATA
R39602-1 118468-8 125703-2 1996 TOTALS 126495-11 129560-9 129560-8 129560-7 129560-6 129560-5 129560-3 129560-2 129560-1 129815-4 129815-3 129815-2 129815-1 R39602-4 R39602-3 R39602-2 R39602-1 128777-3 128777-2 128777-1 125836-2 125836-1 125558-6 125558-5 125558-4 125558-3 125558-2 125558-1 125703-6 125703-5 125703-4 125703-3 125703-2 125703-1 126495-2 126495-1 603P 603P 603P 603P 603P 603P 603P 603P 603P 603P 603P 603P 603P 604E 604E 604E 604E 604E 604E 604E 603P 603P 603P 603P 603P 603P 603P 603P 603P 603P 603P 603P 603P 603P 603P 603P Device Type 604E 603P 603P Device 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 Leff MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS13 Package Site Assy 168H 168H 168H 9618 9637 9637 9634 9633 9632 9633 9632 9632 9633 9633 9633 9633 9630 9630 9630 9616 9616 9614 9614 9614 9614 9614 9614 9615 9615 9615 9615 9615 9615 9618 9618 Date Code Rdpt 3/4706 0/185 0/96 0/96 0/96 0/96 0/91 0/96 0/96 0/96 0/83 0/70 0/96 0/44 0/72 0/39 0/94 1/283 0/45 0/77 0/77 0/335 0/330 0/93 1/274 0/109 0/331 0/291 0/114 0/105 0/83 0/146 0/91 1/90 0/104 0/149 0/133 FUNCTIONAL BLOCKED TRENCH ETCH ICACHE FAILURE Read Points: Fails/SS Failure Mode/Mechanism 0/1081 0/185 0/95 0/90 0/93 0/72 0/100 0/72 0/72 0/114 0/86 0/102 0/1079 0/185 0/95 0/90 0/93 0/72 0/100 0/72 0/72 0/114 0/86 0/100 1008
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-21
CBGA (RS, PACKAGE NUMBER PINS: 361, 303, 255,
Applicable Devices:
Part Number
MC88110 MC88410 XPC105 XPC603 XPC604 XPC603E XPC603P XPC604E XPC106 MCM603A
Assembly
Count
BALL GRID ARRAY PACKAGE (RS, Assembly Site: Number Pins: 361, 303, 255, Temperature Humidity Bias 85°C, 1008
Results: Rejects/Devices Time Period 1008 Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/75 0/30 0/59 0/89 0/253
0/74 0/30 0/59 0/88 0/251
0/30 0/59 0/88 0/177
1996 Summary
111573-2 113596-2 116753-2 Device Type PC105 PC105 PC105 PC105 Assy Site Site MS11 MS11 MS11 MS11 Date Code 9525 9533 9538 9611 Tech HCMS HCMS HCMS HCMS 0/29 0/30 0/30 0/75 0/29 0/30 0/30 0/74 1008 0/29 0/30 0/30
124893-3 TOTALS 0/164 0/163 0/89 MOTOROLA 5-22 MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
1996 Summary
TOTALS 109839-14 109839-9 109839-1 88410 88410 88410 Device Type
1996 Summary
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
TOTALS 126653-7 126653-3 128777-7 128777-6 128777-5 128777-4 126653-7 126653-3 PC603EV PC603EV 604E 604E 604E 604E PC603P PC603P Device Type
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
High Temperature Storage Bake 150°C, 1008
Autoclave 121°C, 100% PSIG,
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
Time Period
Time Period
0/201 0/336
0/135
0/135 0/223
0/44 0/44
Assy Site
Assy Site
Results: Rejects/Devices
Results: Rejects/Devices
0/201 0/336
0/135
0/44
0/44
MOS8
MOS8
MOS8
MS13
MS13
MS13
MS13
MS13
MS13
MS13
MS13
Site
Site
0/201 0/336
0/135
0/32 0/171
0/95 0/44
1008
9523
9523
9523
9620
9620
9630
9630
9630
9630
9620
9620
Date Code
Date Code
Cumulative Failure
Cumulative Failure
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
Tech
Tech
0/135
0/45
0/45
0/45
0/88
0/22
0/22
0/22
0/22
0/135
0/45
0/45
0/45
0/44
0/22
0/22
0/135
0/45
0/45
0/45
0/139
0/12
0/35
0/39
0/22
0/22
MOTOROLA 5-23 1008
Temperature Cycle 125°C, Air, 1000 Cycles
Results: Rejects/Devices Time Period Cycles Cycles 1000 Cycles Cumulative Failure
Quarter 1996 Last Quarters
0/66 0/66
0/66 0/66
0/66 0/66
1996 Summary
126653-2 126653-6 Device Type 603P 603P 603P Assy Site Site MS13 MS13 MS13 Date Code 9620 9620 9620 Tech HCMS HCMS HCMS 0/22 0/22 0/22 0/66 0/22 0/22 0/22 0/66 1000 0/22 0/22 0/22 0/66
126653-10 TOTALS
Temperature Cycle 100°C, Air, 1000 Cycles
Time Period Cycles
Results: Rejects/Devices Cycles 1000 Cycles Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/135 0/668 0/803
0/69 0/547 0/616
1/69 1/332 2/401
7,407 1,497 2,491
1996 Summary
124607-4 124607-5 124607-3 TOTALS MCM603A MCM603A MCM603A MS11 MS11 MS11 9608 9608 9608 HCMS HCMS HCMS 0/45 0/45 0/45 0/23 0/23 0/23 0/69 0/23 1/23 0/23 1/69 0/135
Device Type
Assy Site
Site
Date Code
Tech
1000
Failure Summary
Device
Package
Rdpt
Failure Mode/Mechanism
124607-5
MCM603A
1000CYC
FUNCTIONAL FAIL
MOTOROLA 5-24
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Thermal Shock 125°C, Liquid Liquid, 1000 Cycles
Results: Rejects/Devices Time Period Cycles Cycles 1000 Cycles Cumulative Failure
Quarter 1996 Quarter 1996 Last Quarters
0/60 0/60
0/60 0/60
1996 Summary
126653-4 126653-8 PC603P PC603P PC603P MS13 MS13 MS13 9620 9620 9620 HCMS HCMS HCMS 0/16 0/22 0/22 0/60 0/16 0/22 0/22 0/60 126653-12 TOTALS MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT MOTOROLA 5-25
Device Type
Assy Site
Site
Date Code
Tech
1000
CQFP (FE, PACKAGE NUMBER PINS: 132, 144, 184, 240,
Applicable Devices:
Part Number
MC68020 MC68030 MC68EC030 MC68EC/LC040 MC68302 MC68340 MC68839 XC68840 XC68360 MPC603 XPC604 XPC603E XPC603P
Assembly
Count
MOTOROLA 5-26
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
CQFP PACKAGE (FE, Assembly Site: Number Pins: 132, 144, 184, 240, Autoclave 121°C, 100% PSIG,
Results: Rejects/Devices Time Period Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
1/150 1/58 0/20 2/228
6,667 17,241 8,772
1996 Summary
116459-2 116459-1 116459-6 TOTALS Device Type 604A 604A 604A Assy Site Site MS11 MS11 MS11 Date Code 9536 9536 9536 Tech HCMS HCMS HCMS 1/58 1/73 0/77
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT MOTOROLA 5-27
2/208
Failure Summary
Job# 116459-2 116459-1
Device 604A 604A
Package
48HRS 48HRS
Rdpt
Failure Mode/Mechanism TRISTATE LEAKAGE INPUT LEAKAGE
Temperature Cycle 150°C, Air, 1000 Cycles
Results: Rejects/Devices Time Period Cycles Cycles 1000 Cycles Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/126 0/30 0/646 0/347 0/1149
0/45 0/30 0/640 0/347 0/1062
0/30 0/635 0/347 0/1012
1996 Summary
108854-1 106463-1 108296-1 115291-1 118468-15 118468-21 120140-22 111263-49 111263-50 111263-51 111263-52 123885-3 123885-1 123885-2 K39612 K39615 K39616 Device Type 68EC030 68EC040 68LC040 68340 PC603 PC603 PC603E PC603 PC603 PC603 PC603 68060 68060 68060 Assy Site Site MS11 MS11 MS11 MS13 MS13 MS13 MS13 MS13 MS13 MS13 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 MS11 Date Code 9515 9452 9507 9537 9550 9548 9601 9534 9534 9536 9534 9540 9604 9604 9622 9625 9627 9536 9536 9536 Tech HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS 0/22 0/15 0/95 0/15 0/77 0/96 0/77 0/70 0/46 0/62 0/71 0/10 0/10 0/10 0/15 0/15 0/15 0/34 0/25 0/22 0/22 0/15 0/94 0/15 0/72 0/96 0/77 0/70 0/46 0/62 0/71 0/10 0/10 0/10 0/15 0/15 0/15 1000 0/22 0/15 0/94 0/15 0/71 0/95 0/74 0/70 0/46 0/62 0/71 0/10 0/10 0/10
68EC040 68EC040 68EC040 604A 604A 604A 116459-3 116459-4 116459-7 TOTALS 0/802 0/715 0/665 MOTOROLA 5-28 MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Failure Summary 1996 Summary
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
125558-8 TOTALS 111263-40 111263-30 111263-23 111263-17 111263-7 111263-5 115648-16 115648-10 115648-3 118468-16 118468-10 118468-3 118468-2 118468-1 120140-17 120140-10 120140-3 125558-9 125558-8 125558-7 Job# PC603 PC603 PC603 PC603 PC603 PC603 PC603 PC603 PC603 PC603E PC603 PC603 PC603 PC603 PC603E PC603E PC603E PC603P PC603P PC603P PC603P Device Type
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
High Temperature Storage Bake 175°C, 1008
Time Period
0/1128 0/881 0/2009
Device
Assy Site
Results: Rejects/Devices
0/1356 0/879 0/2235
MS13
MS13
MS13
MS13
MS13
MS13
MS13
MS13
MS13
MS13
MS13
MS13
MS13
MS13
MS13
MS13
MS13
Package
Site
0/1349 0/879 0/2228
1008
9536
9536
9534
9534
9534
9534
9542
9542
9539
9550
9548
9548
9548
9548
9601
9552
9552
9614
9614
9614
Date Code
500CYC
Cumulative Failure
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
Rdpt
Tech
0/1128
0/52
0/62
0/57
0/50
0/31
0/31
0/75
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
LEAKAGE HIGH
Failure Mode/Mechanism
0/1356
0/52
0/62
0/56
0/50
0/29
0/31
0/75
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/1349
0/52
0/62
0/54
0/50
0/29
0/27
0/75
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/76
0/77
MOTOROLA 5-29 1008
CPGA (R/RC) PACKAGE NUMBER PINS: 114, 128, 132, 179, 180, 184, 241, 279,
Applicable Devices:
Part Number
MC68000 MC68HC000 MC68010 MC68020 MC68030 XC68040 XC68EC/LC040 MC68302 MC68360 MC68440 MC68450 MC68605 MC68606 MC68824 MC68839 MC68882 MC88100 MC88200 MC88410 MC88110
Assembly
KLM, KLM,
Count
MOTOROLA 5-30
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
CPGA PACKAGE (R/RC) Assembly Site: KLM, Number Pins: 114, 128, 132, 179, 180, 184, 241, 279, Temperature Cycle 150°C, Air, 1000 Cycles
Results: Rejects/Devices Time Period Cycles Cycles 1000 Cycles Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/249 0/66 0/56 0/371
1/249 0/31 0/56 1/336
0/37
0/56 0/93
4,016 2,695
1996 Summary
113459-1 111008-2 120798-12 120798-13 K39603 K39604 K39605 K39610 K39611 Device Type 68010 68020 68302 68302 68020 68020 68040 68040 Assy Site Site MOS5 MS12 MS12 Date Code 9521 9523 9602 9602 9547 9623 9633 9624 9625 9622 9624 Tech HMOS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS 0/31 0/35 0/25 0/14 0/30 0/30 0/30 0/30 0/30 0/30 0/30 0/25 1/14 0/30 0/30 0/30 0/30 0/30 0/30 0/30 0/24 0/13 0/31 1000
MS11 MS11 MS11 MS11 MS11 68EC040 68302 68302 K39613 K39614 TOTALS 0/315 1/280 0/37
Failure Summary
Job# 120798-13
Device
Package
Rdpt
Failure Mode/Mechanism
68302
500CYC
FINE LEAK, HERM FAIL
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-31
1996 Summary
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
TOTALS 125732-11 125732-9 125732-7 124622-9 127715-8 127715-5 127715-2 125638-10 125638-7 125406-10 125406-7 103507-28 103507-26 MPC860 MPC860 MPC860 MPC860 68360 68360 68360 68360 68360 68360 68360 68356 68356 Device Type
MOTOROLA 5-32
Temperature Cycle 150°C, Air, 1000 Cycles
Assembly Site: CITIZEN Number Pins:
PLASTIC BALL GRID ARRAY PACKAGE (ZP)
Applicable Devices:
Time Period
Part Number
MPC860
MPC821
XC68356
XC68360
Cycles
0/142 0/1036
0/894
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
Assy Site
Results: Rejects/Devices
Assembly
NUMBER PINS:
Citizen
Citizen
Citizen
Citizen
0/142 0/1036
0/894
Cycles
PBGA (ZP) PACKAGE
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
Site
0/140 0/1030
0/890
1000 Cycles
9613
9613
9613
9609
9620
9619
9616
9611
9611
9611
9611
9512
9510
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT Date Code Cumulative Failure HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS Tech
Count
0/894 0/77 0/77 0/73 0/77 0/77 0/66 0/68 0/77 0/77 0/77 0/76 0/66
0/894 0/77 0/77 0/73 0/77 0/77 0/66 0/68 0/77 0/77 0/77 0/76 0/66
0/890 0/77 0/77 0/73 0/75 0/77 0/66 0/68 0/77 0/77 0/77 0/75 0/65
1000
1996 Summary
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
TOTALS 125638-14 125638-11 125638-8 68360 68360 68360 Device Type
Temperature Humidity Bias 85°C, 1008 1996 Summary
Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
TOTALS 127715-9 127715-6 125638-12 125638-9 125732-12 125732-10 125732-8 124622-10 124622-6 124622-2 68360 68360 68360 68360 MPC860 MPC860 MPC860 MPC860 MPC821 MPC821 Device Type
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Autoclave 121°C, 100% PSIG,
Time Period
Time Period
0/153 0/384
0/231
0/295 0/461 0/226 0/982
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
CITI
Assy Site
Assy Site
Results: Rejects/Devices
Results: Rejects/Devices
0/153 0/381
0/228
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
MS11
Site
Site
0/153 0/381
0/228
1008
0/295 0/461 1/224 1/980
9620
9619
9611
9611
9613
9613
9613
9609
9609
9606
9611
9611
9611
Date Code
Date Code
Cumulative Failure
Cumulative Failure
4,425 1,018
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
Tech
Tech
0/756
0/77
0/64
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/77
0/231
0/77
0/77
0/77
0/228
0/75
0/76
0/77
0/756
0/77
0/64
0/77
0/77
0/77
0/77
0/76
0/77
0/77
0/77
0/228
0/75
0/76
0/77
MOTOROLA 5-33 1008
PQFP (EM/FC/FG/FT/PB) PACKAGE NUMBER PINS: 100, 120, 132, 144, 160, 208,
Applicable Devices:
Part Number
MC68HC000/1 MC68020 MC68EC020 MC68302 XC68834 XC68349 XC68307 MC68837 XC68322 MC68847 MC68340 XC68360
Assembly
ANAM ASAT ANAM ANAM ANAM ANAM ANAM
Count
MOTOROLA 5-34
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
PQFP PACKAGE (EM, Assembly Site: KLM, ANAM Number Pins: 100, 120, 132, 144, 160, 208, Temperature Cycle 150°C, Air, 1000 Cycles
Results: Rejects/Devices Time Period Cycles Cycles 1000 Cycles Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/545 0/25 0/99 0/261 0/930
0/540 0/24 1/97 0/261 1/922
1/480 0/24 0/58 0/260 1/822
1,835 10,309 2,151
1996 Summary
118707-1 108438-1 108732-2 109241-2 126116-7 Device Type 68341 68847 68847 68302 68360 68360 68360 68847 68847 68847 68847 68302 68302 Assy Site Site MOS8 MOS8 MOS8 MS11 MS11 MS11 MS11 Date Code 9541 9512 9515 9519 9606 9606 9606 9613 9613 9613 9526 9623 9624 Tech HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS 0/39 0/30 0/30 0/25 0/77 0/75 0/77 0/77 0/76 0/73 0/30 0/30 0/30 1/39 0/29 0/29 0/24 0/77 0/75 0/77 0/75 0/75 0/71 0/30 0/30 0/30 0/29 0/29 0/24 0/77 0/75 0/77 1/75 0/75 0/71 0/30 1000
ANAM ANAM ANAM ANAM ANAM ANAM 126116-12 126116-17 126310-2 126310-6 MOS8 MOS8 MOS8 MOS8 MS11 MS11 126310-10 110486-2 K39601 K39608-1 TOTALS 0/669 1/661 1/562
Failure Summary
Lot# 118707-1 126310-2
Device
Package
Rdpt
Failure Mode/Mechanism
68341 68847
1000CYC 1000CYC
GROSS FUNC GROSS FUNC
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-35
Failure Summary 1996 Summary
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
126116-19 TOTALS K39608-2 K39602 109685-2 126310-12 126310-4 126116-19 126116-14 126116-9 126310-8 118707-5 118707-2 Job# 68302 68302 68847 68847 68847 68360 68360 68360 68847 68341 68341 68360 Device Type
Autoclave 121°C, 100% PSIG, 1996 Summary
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
TOTALS 108732-4 126310-11 126310-7 126310-3 126116-13 126116-8 109685-3 68847 68847 68847 68847 68360 68360 68847 Device Type
MOTOROLA 5-36
Temperature Humidity Bias 85°C, 1008
Time Period
Time Period
0/622
0/470 0/75 0/77
0/441
0/411 0/30
Device
ANAM
ANAM
ANAM
ANAM
ANAM
ANAM
ANAM
ANAM
ANAM
ANAM
ANAM
Assy Site
Assy Site
Results: Rejects/Devices
Results: Rejects/Devices
0/88
0/88
0/436
0/406 0/30
MS11
MS11
MOS8
MOS8
MOS8
MS11
MS11
MS11
MOS8
MOS8
MOS8
MOS8
MOS8
MOS8
MOS8
MS11
MS11
MOS8
Package
Site
Site
0/77 1/554
1/403 0/74
0/430
0/400 0/30
1008
9624
9625
9518
9613
9613
9606
9606
9606
9613
9541
9541
9515
9613
9613
9613
9606
9606
9518
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT Date Code Date Code 144HRS
2,128 1,608
Cumulative Failure
Cumulative Failure
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
HCMS
Rdpt
Tech
Tech
0/622
0/30
0/30
0/28
0/77
0/76
0/77
0/76
0/76
0/75
0/39
0/38
0/441
0/30
0/77
0/76
0/77
0/74
0/77
0/30
ELEC OPEN PIN(S) 0/88 0/30 0/30 0/28 0/436 0/28 0/75 0/75 0/77 0/74 0/77 0/30
Failure Mode/Mechanism 1/477 0/28 0/76 0/70 1/77 0/76 0/76 0/74 0/28 0/75 0/71 0/77 0/73 0/76 0/30 0/430 1000
TQFP (PV) PACKAGE NUMBER PINS:
Applicable Devices:
Part Number
MC68302 MC68340 XCF5102
Assembly
ANAM, MITSUI ANAM ANAM
Count
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-37
TQFP PACKAGE (PV) Assembly Site: ANAM Number Pins: Temperature Cycle 150°C, Air, 1000 Cycles
Results: Rejects/Devices Time Period Cycles Cycles 1000 Cycles Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/304 0/30 0/334
0/304 0/30 0/334
0/297 0/27 0/324
1996 Summary
118815-1 118815-9 Device Type 68PM302 68PM302 68PM302 68PM302 Assy Site Site MS11 MS11 MS11 MS11 Date Code 9544 9544 9544 9544 Tech HCMS HCMS HCMS HCMS 0/76 0/76 0/75 0/77 0/76 0/76 0/75 0/77 1000 0/76 0/74 0/72 0/75
118815-11 TOTALS 118815-13 0/304 0/304 0/297
Autoclave 121°C, 100% PSIG,
Time Period
Results: Rejects/Devices Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/213 0/213
0/60 0/60
0/195 0/57 0/252
1996 Summary
108856-3 118815-2 118815-6 107547-3 118815-8 Device Type 68EC030 68PM302 68PM302 68340 68PM302 68PM302 68PM302 Assy Site ANAM ANAM Site MS11 MS11 MOS8 MS11 MS11 MS11 Date Code 9516 9544 9544 9502 9544 9544 9544 Tech HCMS HCMS HCMS HCMS HCMS HCMS HCMS 0/30 0/77 0/76 0/30 0/30 0/27 0/42 0/76 0/77 0/30 0/30
118815-10 118815-14 TOTALS 0/213 0/60 0/252 MOTOROLA 5-38 MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
PLCC (FN) PACKAGE NUMBER PINS:
Applicable Devices:
Part Number
MC68000 MC68HC000 MC68008 MC68010 MC68230 MC68440 MC68605 MC68606 MC68681/2681 MC68824 MC68882 MC68901 MC68EC000 XC68SEC000
Assembly
KLM, ANAM KLM, ANAM, ASTRA ANAM ANAM ANAM BUCH
Count
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-39
PLCC PACKAGE (FN) Assembly Site: KLM, ANAM, ASTRA Number Pins: Temperature Cycle 150°C, Air, 1000 Cycles
Results: Rejects/Devices Time Period Cycles Cycles 1000 Cycles Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/75 0/215 0/105 0/303 0/698
0/75 0/215 0/101 0/302 0/693
0/45 0/215 0/101 0/302 0/663
1996 Summary
117400-1 119466-1 111593-1 119609-2 119609-10 119609-18 123228-1 K39607 TOTALS Device Type 68HC000 68HC001 68605 68SEC000 68SEC000 68SEC000 68605 68HC000 Assy Site BUCH Site MOS8 MOS8 MS10 MS10 MS10 MS10 Date Code 9521 9548 9525 9548 9548 9548 9547 9624 Tech HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS 0/43 0/32 0/30 0/75 0/65 0/75 0/45 0/30 0/43 0/32 0/26 0/75 0/65 0/75 0/45 0/30 1000 0/43 0/32 0/26 0/75 0/65 0/75 0/45
BUCH MOS8 0/395 0/391 0/361
Temperature Humidity Bias 85°C, 1008
Time Period
Results: Rejects/Devices 1008 Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/275 0/82 0/244 0/601
0/263 0/82 0/244 0/589
0/262 0/82 0/244 0/588
1996 Summary
117400-3 115197-3 113123-3 111593-3 113121-3 119609-3 Device Type 68HC000 68HC000 68HC001 68605 68605 Assy Site BUCH BUCH Site MOS2 MOS8 MOS8 MS10 MS10 MS10 Date Code 9521 9534 9530 9525 9526 9548 9548 9548 Tech HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS 0/30 0/25 0/27 0/30 0/30 0/75 0/65 0/75 0/30 0/25 0/27 0/30 0/30 0/66 0/65 0/72 1008 0/30 0/25 0/27 0/30 0/30 0/66 0/65 0/71
68SEC000 68SEC000 68SEC000 119609-11 TOTALS 119609-19 0/357 0/345 0/344 MOTOROLA 5-40 MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Autoclave 121°C, 100% PSIG,
Results: Rejects/Devices Time Period Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/60 0/40 0/306 0/220 0/626
0/30 0/306 0/220 0/556 0/40 0/42 0/215 0/297
1996 Summary
117400-2 120872-3 119466-2 119609-4 119609-12 119609-20 123228-2 K39606 K39618 Device Type 68HC000 68HC000 68HC001 68SEC000 68SEC000 68SEC000 68605 Assy Site BUCH Site MOS8 MS10 MS10 MS10 MOS8 MS10 MS10 Date Code 9521 9550 9548 9548 9548 9548 9547 9620 9633 Tech HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS HCMS 0/42 0/20 0/30 0/74 0/65 0/75 0/40 0/30 0/30 0/42 0/20 0/30 0/74 0/65 0/75 0/40 0/42
68HC000 68HC000 0/30 TOTALS 0/406 0/336 0/82 MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT MOTOROLA 5-41
PDIP PACKAGE NUMBER PINS:
Applicable Devices:
Part Number
MC68HC000/1 MC68000 MC68008 MC68010 MC68440 MC68230 MC68681/2681 MC68901
Assembly
KLM, ANAM KLM, ANAM ANAM ANAM ANAM
Count
PDIP PACKAGE Assembly Site: KLM, ANAM Number Pins: Temperature Cycle 150°C, Air, 1000 Cycles
Results: Rejects/Devices Time Period Cycles Cycles 1000 Cycles Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/60 0/60
0/60 0/60
2/60 2/60
33,333 33,333
MOTOROLA 5-42
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Temperature Humidity Bias 85°C, 1008
Results: Rejects/Devices Time Period 1008 Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/30 0/30
0/30 0/30
0/30 0/30
1996 Summary
116150-4 TOTALS Device Type 68010 Assy Site CARS Site MOS5 Date Code 9526 Tech HMOS 0/30 0/30 0/30 0/30 1008 0/30 0/30
Autoclave 121°C, 100% PSIG,
Results: Rejects/Devices Time Period Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/30 0/30
0/30 0/30
0/29 0/29
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-43
PPGA (RP) PACKAGE NUMBER PINS: 100, 114, 124,
Applicable Devices:
Part Number
MC68020 MC68EC020 MC68030 MC68EC030 MC68340
Assembly
CITIZEN CITIZEN CITIZEN CITIZEN CITIZEN
Count
MOTOROLA 5-44
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
PPGA PACKAGE (RP) Assembly Site: CITIZEN Number Pins: 100, 114, 124, Autoclave 121°C, 100% PSIG,
Results: Rejects/Devices Time Period Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/30 0/30 0/60
0/30 0/30 0/60
0/30 0/29 0/59
1996 Summary
106738-3 TOTALS Device Type 68EC030 Assy Site CITI Site Date Code 9444 Tech HCMS 0/30 0/30 0/30 0/30 0/30 0/30
Temperature Humidity Bias 85°C, 1008
Results: Rejects/Devices Time Period 1008 Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Last Quarters
0/30 0/30
0/30 0/30
0/30 0/30
1996 Summary
107725-3 TOTALS Device Type 68340 Assy Site CITT Site MOS8 Date Code 9507 Tech HCMS 0/30 0/30 0/30 0/30 1008 0/30 0/30
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA 5-45
Temperature Cycle 150°C, Air, 1000 Cycles
Results: Rejects/Devices Time Period Cycles Cycles 1000 Cycles Cumulative Failure
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/120 0/120
0/120 0/120
0/118 0/118
1996 Summary
106738-2 108170-1 108170-3 107725-1 TOTALS Device Type 68EC030 68030 68030 68340 Assy Site CITI CITI CITI CITT Site MOS8 MOS8 MOS8 Date Code 9444 9512 9512 9507 Tech HCMS HCMS HCMS HCMS 0/30 0/30 0/30 0/30 0/120 0/30 0/30 0/30 0/30 0/120 1000 0/29 0/29 0/30 0/30 0/118
MOTOROLA 5-46
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
Section QUALITY ASSURANCE
WORLD WIDE WORLD CLASS
QUALITY ASSURANCE
Dynamic RAMs Fast Static RAMs Microprocessor Products
AVERAGE OUTGOING QUALITY (AOQ)
Calculation Method Fast Static RAMs Dynamic/General Static RAMs 6-10 Microprocessors 6-11 World Wide MMTG 6-14
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
QUALITY ASSURANCE DYNAMIC RAMs/FAST STATIC RAMs
SOLDERABILITY MIL-STD-883C Method 2003 with Hours Steam
Time Period Results: Rejects/Devices Results: Cumulative
Quarter 1996 Quarter 1996 Quarter 1996 Quarter 1995 Last Quarters
0/105 0/360 0/405 0/475 0/1345
0.00% 0.00% 0.00% 0.00% 0.00%
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
QUALITY ASSURANCE MICROPROCESSOR PRODUCTS
SOLDERABILITY 12MRE21502W (with Hours Steam Age) CQFP (FE)
Time Period Results: Rejects/Devices Results: Cumulative
Quarter 1995 Quarter 1995 Quarter 1995 Quarter 1995 Last Quarters
0/15 0/110 0/100 0/380 0/605
0.00% 0.00% 0.00% 0.00% 0.00%
CDIP (L/LC)
Time Period Results: Rejects/Devices Results: Cumulative
Quarter 1995 Quarter 1995 Last Quarters
0/10 0/10
0.00% 0.00%
PDIP
Time Period Results: Rejects/Devices Results: Cumulative
Quarter 1995 Quarter 1995 Quarter 1995 Quarter 1995 Last Quarters
0/10 0/20 0/40
0.00% 0.00% 0.00% 0.00% 0.00%
CPGA (R/RC)
Time Period Results: Rejects/Devices Results: Cumulative
Quarter 1995 Quarter 1995 Quarter 1995 Quarter 1995 Last Quarters
0/10 0/15 0/30
0.00% 0.00% 0.00% 0.00%
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
SOLDERABILITY (Continued) 12MRE21502W (with Hours Steam Age) PPGA (RP)
Time Period Results: Rejects/Devices Results: Cumulative
Quarter 1995 Quarter 1995 Quarter 1995 Last Quarters
0/10 0/15
0.00% 0.00% 0.00%
MARKING DURABILITY 12MRH00154A (Alpha 2110 Solvent Detergent) PLASTIC PACKAGES
Time Period Results: Rejects/Devices Results: Cumulative
Quarter 1995 Quarter 1995 Quarter 1995 Quarter 1995 Last Quarters
0/50 0/10 0/110 0/170
0.00% 0.00% 0.00% 0.00%
CERAMIC PACKAGES
Time Period Results: Rejects/Devices Results: Cumulative
Quarter 1995 Quarter 1995 Quarter 1995 Quarter 1995 Last Quarters
0/85 0/90 0/329 0/504
0.00% 0.00% 0.00% 0.00%
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
MOTOROLA
CALCULATION METHOD
Average Outgoing Quality (AOQ) refers number devices million that outside specification limits time shipment. Motorola continually improved outgoing quality, established goal outgoing quality zero (parts million). AOQs calculated both electrical visual/mechanical performances. Motorola's volume-weighted AOQ, calculated following method:
Average Outgoing Quality (AOQ) Calculation:
(Process Average) (Probability Acceptance) (106)*
Process Average
Total Projected Number Reject Devices Total Number Devices Number Defectives Size Sample Size
Projected Reject Devices
Total Number Devices units each submitted lot.
Probability Acceptance
Number Lots Rejected Number Lots Tested
Conversion parts million (PPM)
MOTOROLA
MICROPROCESSOR MEMORY TECHNOLOGIES GROUP RELIABILITY QUALITY REPORT
AVERAGE OUTGOING QUALITY
Parts Million FSRAM
Device Type LATEW
Other recent searches
SN74ALS651A - SN74ALS651A SN74ALS651A Datasheet
SN74ALS652A - SN74ALS652A SN74ALS652A Datasheet
SN74ALS653 - SN74ALS653 SN74ALS653 Datasheet
SN74ALS654 - SN74ALS654 SN74ALS654 Datasheet
SN74AS651 - SN74AS651 SN74AS651 Datasheet
SN74AS652 - SN74AS652 SN74AS652 Datasheet
SN54ALS652 - SN54ALS652 SN54ALS652 Datasheet
SN54ALS653 - SN54ALS653 SN54ALS653 Datasheet
SN54AS651 - SN54AS651 SN54AS651 Datasheet
SN54AS652 - SN54AS652 SN54AS652 Datasheet
SML-01 - SML-01 SML-01 Datasheet
RH108A - RH108A RH108A Datasheet
LM108A - LM108A LM108A Datasheet
LM108 - LM108 LM108 Datasheet
Q65110A1207 - Q65110A1207 Q65110A1207 Datasheet
Q65110A2479 - Q65110A2479 Q65110A2479 Datasheet
MPDRX307S - MPDRX307S MPDRX307S Datasheet
MPDRX308S - MPDRX308S MPDRX308S Datasheet
MGDM-150 - MGDM-150 MGDM-150 Datasheet
M3D050 - M3D050 M3D050 Datasheet
LD1117 - LD1117 LD1117 Datasheet
DS1701K - DS1701K DS1701K Datasheet
2SK3705 - 2SK3705 2SK3705 Datasheet
Privacy Policy | Disclaimer
© 2012 Datasheet Archive
