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(Formerly MAC77-I thru MAC77-8) SILICON BiE}l SECTIONAL. des


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2N6068 thru 2N6075
(Formerly MAC77-I thru MAC77-8)
SILICON BiE}l SECTIONAL.
designed primarily motor full-wave polarity fol' full-wave silicon
THYRISTQRS applications, power solid-state with such supplies;
control controls
light dimmers, wherever needed. state
trols, heating switch
gate controlled from
devices positive
Triac type thyristors either
blocking
conducting
applied [~AT2(+)G(+),
anocje voltage M"T2(-)G(-)] Greater
negative gate triggering.
Diffused Passivated formity Stability Rugged,
Junctions
parameter
Small,
Therm opadA
Construction
Resistance,
High He;~t Dissipation
Durability
.i$:,~,. ~+,.<,.>~ Ther~al `y,:, .Y$' \+,.* \i.,, ma!.,> -,.> \i.~.\\, Uni-
*On-State Current 85°C)
*Peak Surge Current
,,,*
lT(R~s)
(One
Full
cycle,
to~?~?s~
to-+l 10°C, *Peak Gate Power *Average Gate Power
/&$il</hs)
Peak
Ita$fi:~:,j''''~+<
"*$~, `s?,~$ Range Note
-40to+llo +150
volts
*Operating *Storage
~#'~$emperature
T{rnp~$~&re
Range
Mount$:~$o$@8e ,,.,
(6-32 Screw)
::b_
0,015
TH.~,@L
CI+ARACTE
lSTICS
S)ymb
Thermal
Resistance, Resistance,
JEDEC
Junction
C.!se
Thermal
Case Ambient
Data
0.025
77-02
Indicates NOTES:
0.130
Registered
Ratings apply open gate conditions. Thyristor devices shall tested with constant current source blocking capability such that voltage applied exceeds rated blocking voltage. Torque rating applies with torque washer (Shakeproof WD19523 equivalent). Mounting torque excess does appreci2 heatably lower case-to-sink thermal resistance. Main terminal sink contact common. soldering soldering purposes (either terminal shall exceed
Inc.
HEAT SINK CONTACT AREA OTTOkll
CASE
connection +2000C.
device mounting),
temperatures M~t~rOla
ATrademark
MOTOROl-A
INC.,
1972
ELECTRICAL CHARACTERISTICS
Characteristic
25°C
unless othemise
noted)
Symbol
Unit
*Peak
Blocking
Current
(Either
Direction) Gate Open
IDRM
Rated VDRM
110°C,
*On-State Voltage (Either Peak
Direction)
V
,:*,,
*Gate Trigger Current, Peak Main Terminal Voltage Vdc, ohms, -40° MT2(+)G (+); MT2(-)G(-)
*Gate Trigger Voltage, Peak Main Terminal Voltage Vdc, MT2(+)G (+), MT2(-)G voltage (Either Voltage
VGRL ohms, -40°C Gate Open, -40°C !;:,,?:. :!4., -,,.:.>,,: ?.i:L.k.$ *1.*~$.+:
Main Terminal MT2(+)G(+), Holding Current Main Terminal Initiating Turn-On I
=RatedvDRM, Direction) Vdc,
10kohms,
llO°
MT2(-)G(-)
Current
100mAdc dvldt
Time
Adc, IGT=
,.,$~ ~:c. `.~f',,+,: .:i~ `$\.:ti,*$;-" :h$F>i,, >;::$,,. .+.,,, ",?<.,, .++: ~>3, ,s:,, .,.8*. ,y,.~. J,,, ,$*'. ,,,.,., .)'$ `~,,- .,>., \.$,ft:' !:&\\J,:.\., ~.,. -.,?,;,
Blocking Voltage Application Rate Commutation @VDRM, =85°C, Gate Open
VIPS
Temperature (For light dimmer applications
Coefficient
0.02%/°C
MBS100
recommended). Bidirectional
AN-526 Theory Switches.
Characteristics
Silicon
FIGURE
-AVERAGECURRENT
I?ATING
FIGURE
CURRENT
RATING
701o
U1-''W'. (''.-I IT(AV),
ON-STATE RENT (AMP)
AVERAGE
FIGURE
POW/ER DISSIPATION
lT(R~js),,
STATE CURRENT
(AMP)
FIGURE
6--rYPl
GATE-TRIGGER
REN"r
VTM=12V RL=l OOQ--
OUADFIANT
-111-
-&40 JUNCTION
,o~,20
JUNCTION
TEMPERATURE
(OC)
TEMPERATURE
(OC)
URE7-
MAXI
ON-STAT
ECHARACTERISTICS
URE8-
TYPICAL
HOLDING
CURRENT
1000c
U.IL
NUMBER FULL CYCLES
TIME (ins)
l.Ok
MOTOROLA
&9&l PRINTED 3-72 IMPERIAL 20912 LITHO 828047
Semiconductor
PHOENIX. ARIZONA 85036 5U651 DIARY
Produces
MOTOROLA INC.
Inc.
854,

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