2N6050 2N6051 2N6052 DARLINGTON COMPLEMENTARY SILICON POWER TRANS

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2N6050 2N6051 2N6052 DARLINGTON COMPLEMENTARY SILICON POWER TRANS

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2N6050 2N6051 2N6052
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
designed forgeneral-purpose
applications. High Current 3500 Collector-Emitter Gain (Typ) Voltage 2N6057 2N6058 2N6059 Sustaining 80Vdc amplifier low-speed switching
2N6057 2N6058 2N6059
VCEO (sus) 2N6050, (Min) 2N6051, 2N6052, (Min) Monolithic Shunt Construction Resistors
with Built-In
Base-Emitter
2N6050
2N6051
2N605~'
"~$:$?.
Rating Collector-Emitter Voltage
Symbol VCEO
2N6057
2N6058
Collector-Base Voltage Emitter-Base Voltage
2N6@y'~ ~@:;):c,t+ :?,<.>,, >.,. .3,. "'<w>
1~:~+c SEATING PLANE
THERMAL
CHARACTERl$3~kJ.~
Characteritiic "s~,.,
Symbol
Rating 1.17
Unit
Thermal Resistance, Juqo~#st,? Case
,.,.,,,
Oclw
STYLE 8ASE EMITTER CASE: COLLECTOR LLIMETERSI INCHES
CASE
11-03
TEMPERATURE
(°C)
TO-3
MOTOROM
INC., 1979
0S3224
*ELECTRICAL
CHARACTERISTICS
Characteristic
25°C
uniess otherwise
noted) Symbol Unit
CHARACTERISTICS
Collector-Emitter (Ic= 100mAdc, Sustain Voltage 2N6050, 2N6051 2N6052, Collector Cutoff Current lB=O) lB=O) lB=O) Current vBE(off) VBE(off) Vdc) Vdc, 150°C)
VCEO(SUS) 2N6057 2N6058 2N6059 ICEO 2N6050, 2N6051, 2N6052, 2N6057 2N6058 2N6059 ICEX `*t:!,\ :,.2.:
(vCE=30vdC, (vCE=40vdC, (vCE=50vdC, Collector (VCE Cutoff
,,,!~:'.}+ ~$.:,:
Rated VCEO,
\*:,' ,<,. ,$.w~$~a$$+ ~$.g ~?.:r
mAdc
{VCE Rated VCEO, Emitter Cutoff Current Vdc, IC=O)
IEBO
mAdc
(VBE
`5.0
CHARACTERISTICS
Current Gain
,,:>t~, :'?~.x=,, ~,.$\ .,.,>?, ,.+. ~!$ij.'~p,,\\,.\<* 18,000 ,,?E,, t/>J ?;:?;.,, .'%X>P$OO .*.,, .>~$. sat)yt, R:\:,?.? -:>'., >:'f~.
Adc, Vdc)
Adc, Vdc) Collector-Emitter
Saturation
Volatage
OAdc,
mAdc) 120mAdc) Voltage
(lc=
Adc,
`-.t*,.a
Base-Emitter
Saturation
Adc, 120mAdc) Base-Emitter Voltage
*F%$~ sat) .;~<,$:~,
Adc, Vdc)
DYNAMIC
Magnitude Current
CHARACTERISTICS
Common Transfer Emitter Small-Signal Short Circuit Ratio
.,'.
For#~:& `.']. `y;+" ,,~e,,,,t ,,:. :+i':i
.,,,
`.J:~
[hfel
Adc, Vdc, MHz) Output (VCB= Small-Signal Capacitance 10vdC, Gain f=o.l MHz)
,.<. ,,+,\
`$~$~$,@~050/2N6052 "T?:2N605712N6059 ,~::: .>,,.> .~'J/\
Current
\+,*.-, *.,,., "`.?~.iti,, ,.,?,.,
Adc, Vdc, :.~.~f$t,,:$
:.~, "Indicates JEDEC Registered Data \.,.,, />}>$ (l)puIse tern: pulse Width ~$~$~e{e 2.0%.
FIGURE
SWITCHING
TIMES
ED~OtiaTAIN OESIRED CURRENT M~,@{~$y RECOVERY TYPES, e.g., M.@5#.Q~M ABOVE -100 ~$~@SEO BELDW .!,!-.,, .:,$ .i:\:~%:\;.!:!y$, approx LEVELS SCOPE
+,2v-\~L
r-----
=0'0
~-~5~ +4,0
tf<lOns DUTY CYCLE 1,0%
mz"s
disconnected
COLLECTOR
CURRENT
(AMP)
test circuit
reverse diode voltege polarities.
MOTOROLA
Semiconductor Products Inc.
FIGURE
THERMAL
RESPONSE
CURVES APPLY POWER PULSE TRAIN SHOWN ,*!. `*{,3, REAOTIMEAttl ?,.,.,\ TJ(pk)
`-.1
1.1.1
0.,1y;
VCE, COLLECTOR-EMITTER
0,05
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) VOLTAGE (VQ&?$,W]f] ,':~ There limitations thq,@%&qr$andIing ability transistor: aver~e junction temperature second breakdown. Safe operating area curves indicate fi~t$~tfie transistor that must obsewed reliable operation; i.e., transistor must su~ected greater dissipation than cu+~#~Q&%te. data Figures based TJ(pk) valid duty cycles p'&ded TJ(pk) 200°C limitations will reduq@~# Rower ,.>. ,,``:~j.:.>>+.$~ that 200°C; variable depending conditions. Second breakdown pulse limits TJ(pk) calculated frOm data Figure high case temperatures, thermal handled values less than limitations imposed second breakdown. (See AN-41 FIGURE CAPACITANCE
1000
111111
111111
2N6050/2N6[ 052tiiiiii 2N6057/2N6059
FREOUENCY (kHz)
REVERSE VOLTAGE (VOLTS)
Mo~oRoLA Semicond.ct.rpr.d.cts
2N6050, 2N6051, 2N6052
FIGURE 20,000 CURRENT 40,000, GAIN
2N6057, 2N6058, 2N6059
10,000
5000 3000 2000
1000
Iwhl
1,000
COLLECTOR
(AMP)
CURRENT
(mA)
BASE CURRENT
FlGuRE12-
"ON"
VOLTAGES
CURRENT
1!11
COLLECTOR
(AMP)
MOTOROLA
Semiconductor Products Inc.
2N6050,
2N6051,
2N6052
FIGURE TEMPERATURE COEFFICIENTS
2N6057,
2N6058,
2N6059
-0.6 -0.4
-0.2
+0.2
REVER5E+
FbRwAfi~ tO.6 VOLTAGE
t0,4
to.8
tl.4
VBE, BASE-EMITTER
LTS)
FIGURE
DARLINGTON
SCHEMATICS
Collector 2N6057 2N6058 2N6059 Base Base
-_+_
Collector
-5.0
Emitter
Emitter
MOTOROLA
Semiconductor
Inc.
MOTOROLA
7203-1 PRINTED 8-79 IMPERIAL llTHO B80716
Semiconductor
20912. PHOENIX,
Products
ARIZONA 85036
Inc.
SUBSIDIARY
MOTOROLA
INC.
DS-3224

2N6050 2N6051 2N6052 DARLINGTON COMPLEMENTARY SILICON POWER TRANS

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