2N6034 2N6037 2N6035 2N6038 2N6036 2N6039 PLASTIC LINGTON COMPLEM

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2N6034 2N6037 2N6035 2N6038 2N6036 2N6039 PLASTIC LINGTON COMPLEM

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2N6034 2N6037 2N6035 2N6038 2N6036 2N6039
PLASTIC LINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
designed applications. High Current 2000 Collector-Emitter VCEO(Sus) Gain- (Typ) 2.OAdc Voltage mAdc 2N6037 2N6038 2N6039 Capability forgeneral-purpose amplifier low-speed switching
Sustaining (Min) (Min) (Min)
2N6034, 2N6035, 2N6036, Current
Forward
Biased Second Breakdown
Isjb @'25 Monolithic Construction with Built-In Base-Emitter
Resistors Limit Space-Saving
Leakage Multiplication Ratio
High Performance-to-Cost
Case Plastic Package *MAXI MUM'RATINGS
Rating
Collector-Emitter Voltage Voltage Voltage Continuous Peak
Symbol VCEO
2N6037
2N60~$j 60;?
,t;~:&9 ,.:,,>
lector-Base Emitter-Base Collector
Current
-'"'''!*:O.O .J.s `.!' ~l~t:~ ,.,., .loo- 0.32-
Base Current Total Device Dissipation Derate above 25°C Total Device Dissipation Z5°C 25°C
.?:\tlk::$+$
Unit
Derate above 25°C Operating Storage Junction ~:<i
"'*&av l-l.5- -o.o12- -45to+150-
Character~f~> Thermal Thermal Resistance,Ju"R~o Resistan,&&j~'ti'*ion
Case Ambient Data.
Symbol
3.12 83.3
Unit
Watts Wloc Watts Wloc HEAT SINK CONTACTAREA (BOTTOM) INCHES MILLIMETERS 0.295 0.305 7.490 7,750 0,095 0.105 2,410 2.670 0,425 0.435 10,800 11,050 0.020 0.026 0,508 0.B60 0.145 0.155 3,680 3.940 0,093 2.360 0.025 0.035 0.635 0.889 0,148 0.158 3.780 4.010 0.115 0.118 2.920 3.000 0,595 0.645 15.110 16.380 0.015 0.025 0.381 0.635 0.045 0.055 0,085 0.095 1.140 1.400 2.160 2.410
mAdc
Oclw
icates Q~.,C ~tered
TEMPERATURE (°C)
CASE 77-03
*ELECTRICAL CHARACTERISTICS
Characteristic 25°C unless otherwise noted) Svmbol Unit
CHARACTERISTICS
2ollector-Emitter mAdc, Sustaining Voltage 2N6034, 2N6035, 2N6036, >ollectOr-Cutoff (VCE Current lB=O) 2N6034, 2N6035, 2N6036, Current vBE(Off] vBE(~ff) vBE(Off) vBE(Off) Vdc) Vdc) Vdc) 2N6034, vBE(Off) 6035, vBE(~ff) 2N6036, Current 2N6034, 2N6035, 2N6036, 2N6037 2N6038 2N6039 2N6039 2N6038 2N6037 2N6034, 2N6035, 2N6036, 2N6037 2N6038 2N6039 2N6037 2N6038 2N6039 2N6037 2N6038 2N6039
vcEo(sus}
Vdc,
(vCE=30vdc, (vcE=40vdC,lB=O) ;ollector (VCE (VCE (VCE (VCE (VCE (VCE :ollector (VCB (VCB (VCB !mitter (VBE Cutoff
Vdc, Vdc,
Vdc, Vdc,
125°C) Vdc,
125°C) Vdc, 125°C) Cutoff Cutoff
Vdc, Vdc, Vdc,
Current Vdc,
CHARACTERISTICS
~';:,~'$'~ ~.::,.,+.,.,.+ ~:k. .~,:,,,,,.k:+ `.:&$ ,,$:> ~,,. vCE(~t) ;$y~
Adc,
VCE'=
Vdc) Vdc) Vdc)
15,000
Adc,
Adc,
Coil ectOr-E mitter
Adc,
Saturat
Voltage mAdc}
Adc, mAdc)
Saturation [tage
\.::?:J\i;,x .,.,. ":',,. .~.k' :*\. ~.t-.' *,;*~:1 ,Jti. ,(:$, <f,, ",,\,,.\\~ \,,.~ .,.y~x :;/c .:j<:y%~,,
.*>l :.*.<f:,w.s. vBE(~t)
Base-Emitter
Adc, mAdc)
Vdc)
Base-Emitter Voltage Adc, DYNAMIC
Current~ain Output (VCB 0.75
VBE(On)
CHARACTERISTICS
Bandwidth Adc, PrOduct~.$,*+~$' Vdc,$
MHz) 2N6035, 2N6038, 2N6036 2N6039
Capacitance Vdc,
,,$,~:~ s,:.,,:. .,l\<$.\ .,.?,. f,m=$:l .,t.s'fi. *V.;:':': `~i~.'. ,.$. ~,~iste'~ata. 2N6034, 6037,
indicates
JEDEC
FIGURE
SWITCHING
TIMES
H25"S
<lOns OUTY CYCLE= 1.0%
andtr, isdisconnected a"d"2=0RBa"dRcarevaried obtaind;siredtest currents lest circuit,reverss diode, polarities input pulses.
0.04
0.06
COLLECTOR
(AMP)
CURRENT
MOTOROLA
Semiconductor
Products
Enc.
FIGURE
THERMAL
RESPONSE
VCE, COLLECTOR-EMITTERVOLTAGE (VOLTS)
FIGURE
CAPACITANCE
,J~$~$&~@ limitations power handling ability trq~:~$~i average junction temperature second breakdown. ,,l:&j$':qperating area curves indicate limits tran$~m that must observed reliable operation; i.e., transistor &ust subjected greater dissipation than curves indicate. data Figures based TJ(pk) So"c; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(Dk) 150°C. TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown. {See AN-415).
REVERSEVOLTAGE (VOLTS)
MOTOROLA
Semiconductor
Products
Inc.
2N6034,
2N6035,
2N6036 FIGURE
2N6037,
2N6036,
2N6039
TEMPERATURE
COEFFICIENTS
LLECTOR
RENT (AMP)
FIGURE =REVERSE
COLLE(
vcE=30v
,,1),
VBE, BASE EMITTER
VOLTAGE
{VOLTS)
2N6037 2N6038
Collector
Base
Emitter
Emitter
MOTOROLA
Semiconductor
PrwducZs
inc.

2N6034 2N6037 2N6035 2N6038 2N6036 2N6039 PLASTIC LINGTON COMPLEM

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