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DRIVER-AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG1308F GaAs MMIC
Top Searches for this datasheetNJG1308F DRIVER-AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJG1308F GaAs MMIC Driver-Amplifier 800MHz1.9 band Cellular phone System. features current consumption high gain. Small MTP6 package adopted. PACKAGE OUTLINE NJG1308F FEATURES supply voltage operation current consumption High gain Pout Gain Compression point Package +3.0V typ. 15mA typ. @Pout=+8dBm 18dB typ. @f=938MHz 16dB @f=1441MHz 14dB @f=1900MHz +12dBm typ. @f=938MHz +11dBm typ. @f=1441/1900MHz MTP6 CONFIGURATION TYPE (Top View) connection 1.RFin 2.GND 3.BPC 4.RFout 5.GND 6.GND Note: package orientation mark. NJG1308F ABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL Topr Tstg CONDITIONS VDD=3V (Ta=+25°C, Zs=Zl=50) RATINGS UNITS -40~+85 -55~+150 ELECTRICAL CHARACTERISTICS 1(Application circuit PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Pout Gain Compression point Adjacent Channel Leakage Power (PDC Regulation) Input VSWR Output VSWR SYMBOL Freq Gain Gflat P-1dB Pacp VSWRi VSWRo CONDITIONS VDD=3.0V VDD=3.0V, Pout=+8dBm VDD=3.0V, Pin=-10dBm VDD=3.0V, Pin=-10dBm VDD=3.0V VDD=3.0V, Pout=+8dBm offset=50kHz Pin;/4 DQPSK VDD=3.0V VDD=3.0V (Ta=+25°C, Zs=Zl=50) UNITS ELECTRICAL CHARACTERISTICS (Application circuit PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Pout Gain Compression point Adjacent Channel Leakage Power (PDC Regulation) Input VSWR Output VSWR SYMBOL freq Gain Gflat P-1dB Pacp VSWRi VSWRo CONDITIONS VDD=3.0V VDD=3.0V, Pout=+8dBm VDD=3.0V, Pin=-10dBm VDD=3.0V, Pin=-10dBm VDD=3.0V VDD=3.0V, Pout=+8dBm offset=50kHz Pin; DQPSK VDD=3.0V VDD=3.0V 1429 (Ta=+25°C, Zs=Zl=50) UNITS 1441 1453 NJG1308F ELECTRICAL CHARACTERISTICS (Application circuit PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Pout Gain Compression point Adjacent Channel Leakage Power (PHS Regulation) Input VSWR Output VSWR SYMBOL freq Gain Gflat P-1dB Pacp VSWRi VSWRo CONDITIONS VDD=3.0V VDD=3.0V, Pout=+8dBm VDD=3.0V, Pin=-10dBm VDD=3.0V, Pin=-10dBm VDD=3.0V VDD=3.0V, Pout=+8dBm offset=600kHz Pin; DQPSK VDD=3.0V VDD=3.0V (Ta=+25°C, Zs=Zl=50) UNITS 1890 1900 1920 ELECTRICAL CHARACTERISTICS (Application circuit PARAMETER Operating Frequency Supply Voltage Operating Current Power Gain Gain Flatness Pout Compression point Input VSWR Output VSWR SYMBOL freq Gain Gflat P-1Db VSWRI VSWRo CONDITIONS VDD=3.0V VDD=3.0V, Pout=+8dBm VDD=3.0V, Pin=-10dBm VDD=3.0V, Pin=-10dBm VDD=3.0V VDD=3.0V VDD=3.0V (Ta=+25°C, Zs=Zl=50) UNITS 1750 1765 1780 NJG1308F TERMINAL INFORMATION SYMBOL RFin DESCRIPTIONS signal input terminal driver amplifier. Ground terminal. Source electrode terminal driver amplifier. operating current chosen resistor connected between this terminal ground. signal output terminal driver amplifier. Please choke coil power supply driver amplifier this terminal. Ground terminal. Ground terminal. RFout NJG1308F TYPICAL CHARACTERISTICS (Application circuit NJG1308F TYPICAL CHARACTERISTICS (Application circuit NJG1308F TYPICAL CHARACTERISTICS (Application circuit S21,S11,S22,S12 FREQUENCY =3V) S21,S11,S22 (dB) (dB) OUTPUT POWER, DDvs. INPUT POWER DD=3V, f=1.9GHz, t=+25°C) Output Power (dBm) P-1dB +11.0dBm (mA) Frequency (GHz) Input Power (dBm) ACP, VECTOR ERROR OUTPUT POWER DD=3V, f=1.9GHz, offset=600kHz, t=+25°C) PHS1.9GHz Adjacent Channel Leakage Power (dBc) GAIN, TEMPERATURE (VDD=3V, f=1.9GHz, Pin=-10dBm) Vector Error Gain (dB) (mA) Vector Error Output Power (dBm) Ambient Temperature P-1dB, Psat TEMPERATURE (VDD=3V, f=1.9GHz, Psat:Pin=+10dBm) ACP, VECTOR ERROR TEMPERATURE (VDD=3V, f=1.9GHz, offset=600kHz, =+8dBm) PHS1.9GHz Adjacent Channel Leakage Power (dBc) Psat P-1dB, Psat (dBm) P-1dB Ambient Temperature Ambient Temperature NJG1308F TYPICAL CHARACTERISTICS (Application circuit S21,S11,S22,S12 FREQUENCY =3V) S21,S11,S22 (dB) (dB) Frequency (GHz) NJG1308F TYPICAL CHARACTERISTICS Scattering Parameters (VDD=3V) Freq. (GHz) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 0.865 0.853 0.834 0.810 0.788 0.757 0.729 0.700 0.672 0.645 0.618 0.589 0.563 0.541 0.519 0.502 0.489 0.490 0.502 0.536 0.592 0.669 0.760 0.851 0.920 0.951 (deg) -26.1 -32.2 -38.2 -43.7 -48.5 -52.8 -56.7 -60.3 -63.1 -65.6 -67.7 -69.0 -69.7 -69.8 -69.6 -67.9 -65.9 -62.3 -58.9 -55.6 -53.5 -53.8 -56.9 -62.8 -70.6 -79.2 4.892 5.060 5.093 5.046 4.974 4.801 4.650 4.457 4.271 4.083 3.893 3.687 3.509 3.317 3.122 2.904 2.696 2.432 2.150 1.814 1.409 0.933 0.461 0.575 1.154 1.703 (deg) 174.0 163.2 152.9 143.5 134.5 126.4 118.6 111.5 104.6 98.0 91.3 85.2 79.3 72.9 66.5 60.0 53.6 46.6 39.1 31.9 24.6 21.3 41.1 106.1 113.3 105.2 0.029 0.030 0.033 0.035 0.036 0.038 0.039 0.041 0.043 0.045 0.046 0.049 0.051 0.055 0.058 0.060 0.063 0.065 0.065 0.066 0.062 0.056 0.050 0.048 0.060 0.081 (deg) 52.0 48.7 46.2 46.4 44.5 43.5 42.7 44.0 43.3 44.6 44.0 43.8 42.4 40.3 38.3 35.8 31.4 25.7 17.4 -5.9 -24.0 -54.3 -96.7 -140.4 -172.8 0.718 0.681 0.648 0.626 0.603 0.590 0.580 0.579 0.577 0.581 0.588 0.597 0.612 0.630 0.650 0.671 0.700 0.728 0.764 0.795 0.828 0.846 0.842 0.800 0.731 0.624 (deg) -56.5 -63.4 -69.6 -74.9 -78.8 -82.4 -85.6 -88.8 -90.9 -93.6 -96.0 -98.5 -100.8 -103.7 -106.9 -110.2 -114.5 -119.5 -125.8 -132.8 -142.1 -153.2 -166.5 178.6 161.6 144.2 CONNECTIONS FUNCTIONAL BLOCK DIAGRAM ZO=50 ZO=50 ZL=50 ZS=50 NJG1308F APPLICATION CIRCUIT1 APPLICATION CIRCUIT NJG1308F APPLICATION CIRCUIT APPLICATION CIRCUIT NJG1308F RECOMMENDED DESIGN RFin RFout 1308F PCB:FR-4 22.5x20.0mm, t=0.5mm MICROSTRIP LINE WIDTH=1.0mm (Zo=50) CHIP SIZE:1608 Notes: Following chip capacitor should connected near each terminal bypass capacitor. Following chip capacitors necessary block bias. Chip parts list. Parts C1~C6 L1~L3 Comment MURATA GRM39 Series TAIYO-YUDEN HK1608 Series NJG1308F Cautions using this product This product contains Gallium-Arsenide (GaAs) which harmful material. into mouth. dispose fire break this product. chemically make powder with this product. waste this product, please obey relating your country. This product damaged with electric static discharge (ESD) spike voltage. Please handle with care avoid these damages. [CAUTION] specifications this databook only given information without guarantee regards either mistakes omissions. application circuits this databook described only show representative usages product intended guarantee permission right including industrial rights. 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