BPV22F high speed high sensitive photodiode plastic package with spher

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BPV22F high speed high sensitive photodiode plastic package with spher

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BPV22F
BPV22F high speed high sensitive photodiode plastic package with spherical side view lens. epoxy package itself filter,spectrally matched GaAs GaAs/GaAlAs emitters nm). Lens radius chip position perfectly matched chip size, giving high sensitivity without compromising viewing angle. comparison with flat packages spherical lens package achieves sensitivity improvement 80%.
Features
Large radiant sensitive area (A=7.5 mm2) Wide viewing angle Improved sensitivity Fast response times Plastic package with filter Filter designed transmission
8633
Applications
Infrared remote control free transmission systems combination with emitter diodes (TSU.- TSI.-Series).
Absolute Maximum Ratings
Tamb 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol Tamb Tstg RthJA Value -55.+100 -55.+100 Unit
Document Number 81508 Rev. 20-May-99
www.vishay.com
BPV22F
Vishay Semiconductors Basic Characteristics
Tamb 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Serial Resistance Open Circuit Voltage Temp. Coefficient Short Circuit Current Reverse Light Current Temp. Coefficient Absolute Spectral Sensitivity Test Conditions MHz, mW/cm2, mW/cm2, mW/cm2, mW/cm2, mW/cm2, Symbol V(BR) TKVo TKIra -2.6 0.35 870.1050 10-14 6x1012 Unit
mV/K
cmHz/
Angle Half Sensitivity Wavelength Peak Sensitivity Range Spectral Bandwidth Quantum Efficiency Noise Equivalent Power Detectivity
l0.5
Rise Time Fall Time Cut-Off Frequency
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Document Number 81508 Rev. 20-May-99
BPV22F
Vishay Semiconductors Typical Characteristics (Tamb 25_C unless otherwise specified)
1000 Reverse Light Current Reverse Dark Current mW/cm2
l=950nm
mW/cm2 mW/cm2 mW/cm2 0.05 mW/cm2 0.02 mW/cm2
VR=10V
8412
8403
Tamb Ambient Temperature
Reverse Voltage
Figure Reverse Dark Current Ambient Temperature
Relative Reverse Light Current
Figure Reverse Light Current Reverse Voltage
Diode Capacitance f=1MHz
VR=5V l=950nm
8409
8407
Tamb Ambient Temperature
Reverse Voltage
Figure Relative Reverse Light Current Ambient Temperature
1000 Reverse Light Current
Figure Diode Capacitance Reverse Voltage
Relative Spectral Sensitivity
VR=5V l=950nm
0.01
8411
Irradiance
1050
1150
8408
Wavelength
Figure Reverse Light Current Irradiance
Figure Relative Spectral Sensitivity Wavelength
Document Number 81508 Rev. 20-May-99
www.vishay.com
BPV22F
Relative Sensitivity
8413
Figure Relative Radiant Sensitivity Angular Displacement
Dimensions
11475
www.vishay.com
Document Number 81508 Rev. 20-May-99
BPV22F
Vishay Semiconductors Ozone Depleting Substances Policy Statement
policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances.
reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay-Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423
Document Number 81508 Rev. 20-May-99
www.vishay.com

BPV22F high speed high sensitive photodiode plastic package with spher

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