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BPV20F high speed high sensitive photodiode plastic package with cylin
Top Searches for this datasheetBPV20F BPV20F high speed high sensitive photodiode plastic package with cylindrical side view lens. epoxy package itself filter, spectrally matched GaAs GaAs/GaAlAs emitters p=950nm). Lens radius chip position perfectly matched chip size, giving high sensitivity without compromising viewing angle. comparison with flat packages cylindrical lens package achieves sensitivity improvement 8387 Features Large radiant sensitive area (A=7.5 mm2) Wide viewing angle Improved sensitivity Fast response times TO-92 plastic package with filter Filter designed transmission Applications Infrared remote control free transmission systems combination with emitter diodes (TSU.- TSI.-Series). Absolute Maximum Ratings Tamb 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol Tamb Tstg RthJA Value -55.+100 -55.+100 Unit Document Number 81506 Rev. 20-May-99 www.vishay.com BPV20F Vishay Semiconductors Basic Characteristics Tamb 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Serial Resistance Open Circuit Voltage Temp. Coefficient Short Circuit Current Reverse Light Current Temp. Coefficient Absolute Spectral Sensitivity Test Conditions MHz, mW/cm2, mW/cm2, mW/cm2, mW/cm2, mW/cm2, Symbol V(BR) TKVo TKIra -2.6 0.35 870.1050 4x10-14 6x1012 Unit mV/K cmHz/ Angle Half Sensitivity Wavelength Peak Sensitivity Range Spectral Bandwidth Quantum Efficiency Noise Equivalent Power VR=10 =950 Detectivity VR=10 =950 l0.5 Rise Time Fall Time Cut-Off Frequency l=820 l=820 l=870 l=950 VR=10 RL=1 VR=10 RL=1 VR=12 RL=1 VR=12 RL=1 www.vishay.com Document Number 81506 Rev. 20-May-99 BPV20F Vishay Semiconductors Typical Characteristics (Tamb 25_C unless otherwise specified) 1000 Reverse Light Current Reverse Dark Current mW/cm2 mW/cm2 mW/cm2 mW/cm2 0.05 mW/cm2 l=950nm VR=10V 0.02 mW/cm2 8410 8403 Tamb Ambient Temperature Reverse Voltage Figure Reverse Dark Current Ambient Temperature Relative Reverse Light Current Figure Reverse Light Current Reverse Voltage Diode Capacitance f=1MHz VR=5V l=950nm 8409 8407 Tamb Ambient Temperature Reverse Voltage Figure Relative Reverse Light Current Ambient Temperature 1000 Reverse Light Current Figure Diode Capacitance Reverse Voltage Relative Spectral Sensitivity 8408 VR=5V l=950nm 0.01 8404 1050 1150 Irradiance Wavelength Figure Reverse Light Current Irradiance Figure Relative Spectral Sensitivity Wavelength Document Number 81506 Rev. 20-May-99 www.vishay.com BPV20F Relative Sensitivity 8406 Figure Relative Radiant Sensitivity Angular Displacement www.vishay.com Document Number 81506 Rev. 20-May-99 BPV20F Vishay Semiconductors Dimensions 9612202 Document Number 81506 Rev. 20-May-99 www.vishay.com BPV20F Vishay Semiconductors Ozone Depleting Substances Policy Statement policy Vishay Semiconductor GmbH Meet present future national international statutory requirements. Regularly continuously improve performance products, processes, distribution operating systems with respect their impact health safety employees public, well their impact environment. particular concern control eliminate releases those substances into atmosphere which known ozone depleting substances ODSs Montreal Protocol 1987 London Amendments 1990 intend severely restrict ODSs forbid their within next years. Various national international initiatives pressing earlier these substances. Vishay Semiconductor GmbH been able policy continuous improvements eliminate ODSs listed following documents. Annex list transitional substances Montreal Protocol London Amendments respectively Class ozone depleting substances Clean Amendments 1990 Environmental Protection Agency Council Decision 88/540/EEC 91/690/EEC Annex transitional substances respectively. Vishay Semiconductor GmbH certify that semiconductors manufactured with ozone depleting substances contain such substances. reserve right make changes improve technical design without further notice. Parameters vary different applications. operating parameters must validated each customer application customer. Should buyer Vishay-Semiconductors products unintended unauthorized application, buyer shall indemnify Vishay-Semiconductors against claims, costs, damages, expenses, arising directly indirectly, claim personal damage, injury death associated with such unintended unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 7131 2831, number: 7131 2423 www.vishay.com Document Number 81506 Rev. 20-May-99 Other recent searchesST95040 - ST95040 ST95040 Datasheet PVN012APbF - PVN012APbF PVN012APbF Datasheet PM73122 - PM73122 PM73122 Datasheet NGA-186 - NGA-186 NGA-186 Datasheet MAX5037 - MAX5037 MAX5037 Datasheet M41T256Y - M41T256Y M41T256Y Datasheet HB1007 - HB1007 HB1007 Datasheet GS881Z18 - GS881Z18 GS881Z18 Datasheet 36AD - 36AD 36AD Datasheet GS881Z18 - GS881Z18 GS881Z18 Datasheet 36AT - 36AT 36AT Datasheet 1700T3302 - 1700T3302 1700T3302 Datasheet
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